SI4544DY ,Complementary MOSFET Half-Bridge (N-/P-Channel) FaxBack 408-970-5600S-56944—Rev. C, 23-Nov-983V – Gate-to-Source Voltage (V) r – On-Resistance ..
SI4544DY ,Complementary MOSFET Half-Bridge (N-/P-Channel) FaxBack 408-970-5600S-56944—Rev. C, 23-Nov-981Si4544DYVishay Siliconix ..
SI4544DY ,Complementary MOSFET Half-Bridge (N-/P-Channel) FaxBack 408-970-5600S-56944—Rev. C, 23-Nov-984Normalized Effective TransientI – Source Current ..
SI4558DY ,N/P-Channel 30-V (D-S) PairSi4558DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFET
SI4544DY
Complementary MOSFET Half-Bridge (N-/P-Channel)
VISHAY
Si4544DY
Vishay Siliconix
N- and P-Channel 30-v (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (O) ID (A) tts
0.035 @ VGS = 10 v d: 6.5 tpif,
N-Channel 30 m
0.050 @ VGs = 4.5 v cl: 5.4 “a Cts'ts
0.045 @VGS =-10V i5] tte rttro
P-Channel -30 'ef'
0.090 @ VGS = -A.5 V i4.0 po
D G2 _
Top Mew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS d: 20 d: 20
TA=25°C i6.5 i5]
Continuous Drain Current (TJ = 150°C)a ID
TA-- 70°C $5.4 $4.0
Pulsed Drain Current IDM i 20 i 20
Continuous Source Current (Diode Conduction)a ls 1.7 -1.7
TA = 25°C 2.4
Maximum Power Dissipation" PD W
TA = 70°C 1.5
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 52 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70768
S-56944-Rev. C, 23-Nov-98
wvvw.vishay.com . FaxBack 408-970-5600
Si4544DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITo = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = VGS, ID = 250 0A N-Ch 1.0
Gate Threshold Voltage 1/Gith) V
VDs = VGs. ID = -250 WA P-Ch -1.0
N-Ch l 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = d: 20 V P Ch i100 nA
VDS = 30 V, VGS = 0 V N-Ch 1
Vos = -30 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss pA
VDS = 30 V, Veg = O V, To = 55°C N-Ch 5
I/rss = -30 V, VGS = 0 V TJ = 55°C P-Ch -5
VDS 2 5 V, VGS = 10 V N-Ch 20
N/os Z -5 V, VGS = -1 0 V P-Ch -20
On-State Drain Currenta 'D(on) V 5 V V 4 5 V N Ch 5 A
DS 3 , GS = . -
V08 2_' -5 V, VGS = -4.5 V P-Ch -5
VGS = 10 V, ID = 6.5 A N-Ch 0.027 0.035
VGS = -10 v, ID = -5.7 A P-Ch 0.036 0.045
Drain-Source On-State Resistancea rDS(on) V 4 5 V I 5 4 A N Ch 0 038 0 050 Q
GS = . , D = . - . .
VGS = -4.5 V, ID = -4.0 A P-Ch 0.060 0.090
VDs=15V,lD=6.5A N-Ch 15
Forward Transconductancea gfs V 15 V I 5 7 A P Ch 9 S
DS = - , D = - . -
Is = 1.7 A, VGS = 0 V N-Ch 0.75 1.2
Diode Forward Voltage' VSD I 1 7 A V 0 V P Ch 0 75 1 2 V
s = - . , GS = - - V - V
Dynamicb
N-Ch 18 35
Total Gate Charge 09
N-Channel P-Ch 19 40
VDS= 15V, VGs=10V,ID=6.5A N-Ch 4.2
Gate-Source Charge Qgs nC
P-Channel P-Ch 4.5
VDS=-15V, VGS=-10V, ID=-5.7A N-Ch 3.5
Gate-Drain Charge di P Ch 3 6
N-Ch 13 30
Turn-On Delay Time tum”) P Ch 13 30
N-Channel N-Ch 12 30
Rise Time tr VDD=15V, RL=159
|021A,VGEN=1OV,RG=6Q P-Ch 15 30
P- h I N-Ch 31 60
Turn-Off Delay Time td(ott) VDD = _1%\:n£|_e= 15 Q P-Ch 37 70 ns
ID a -1 A,VGEN=-10V, Rs=6Q
N-Ch 10 30
Fall Time If P Ch 14 30
Source-Drain t IF = 1.7 A, di/dt = 100 Alps N-Ch 30 70
Reverse Recovery Time rr IF = -1.7 A, di/dt = 100 Alps P-Ch 35 70
a. Pulsetest; pulse width s 300 ps. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70768
2 S-56944-Rev. C, 23-Nov-98
VISHAY
Si4544DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 l l
VGS=1Othru5V l
Ci:.] 'it':
E 12 E
'r, 's
0 2 4 6 8 10
V93 - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
8 0.04 7 VGS 4.5 V s,,,,,,---''" a
il,'; 0.03 - VGs=10V 'ti
b 0.02 I
h 0.01
0 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
v.33 = 15 v /
8 _- b = 6.5 A "
V GS — Gate-to-Source Voltage (V)
rDS(on)— On-Resistance( Q )
(Normallzed)
0 4 8 12 16 20
Q9 - Total Gate Charge (nC)
N-CHANNEL
Transfer Characteristics
TC: 125°C ,
25''C y
-55''C
0 1 2 3 4 5
I/ss - Gate-to-Source Voltage (V)
Capacitance
K Crss
0 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 7 Gs=1ov "
|D=6.5A ',,w''"
1.4 ,/
s,.,,-''''''
-50 -25 O 25 50 75 100 125 150
To - Junction Temperature (°C)
Document Number: 70768
S-56944-Rev. C, 23-Nov-98
wvvw.vishay.com . FaxBack 408-970-5600
Si4544DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.12
A 10 Cl 0.09 ID=6.5A
g T J = 150°C d,! 0.06
sn U3, 0 03 "mm-_,
1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 1 3 5 7 9
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 l l 40
ID = 250 MA
0.3 Nc 32 \
fl, b' \
'sg. Ah3 g 16
A) 6 8 Ns,
-0.9 O
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
5 8 o 2
to u) Notes:
.2 o. -
"if,' g 0 1 P1
5 E 0.1 . tDM
ID a) - 11 _
'il [E 0.05 LI ta -
g 1. Duty Cycle, D = 1:
JI 0.02 2. Per Unit Base = RthJA = 52"C/W
- = (i)
Single Pulse 3. TJM TA PDMZWA
4. Surface Mounted
10-4 10-3 IO-'? IO-l 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70768
4 S-56944-Rev. C, 23-Nov-98
VISHAY
Si4544DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS =101hru 5 V
(s-l, 8 /
4 3 v i
0 2 4 6 8 10
V93 - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Cl 0.12
_- = 1
Lg 0.08 VGs 4.5 V s,,,,,-''"
c o......--"'"
O ---.".
Jg VGS = 10 v
iii" 0.04
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS = 10 V
ID = 5.7 A
(I,-',. f
0 4 8 12 16 20
Q9 - Total Gate Charge (nC)
rDS(on)— On-Resistance( £2 )
I D — Drain Current
C — Capacitance (pF)
(Normalized)
P-CHANNEL
Transfer Characteristics
To = 125°C
25°C \ /j'4
d -55''C
0 1 2 3 4 5
I/ss - Gate-to-Source Voltage (V)
Capacitance
'cs,.... Ciss
NSS, Coss
300 & Crss - a..---,
0 6 12 18 24 3O
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 _ l l
VGS = 10 V
1.6 7 ID = 5.7 A
1 4 w,,.,,-''''''''''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70768
S-56944-Rev. C, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si4544DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
10 A 0.16
E T J = 150°C g
l' g 0.12
8 o J08 l
(I) 3 ID = 5.7
- fi:] 0.04 a.----,
1 0.00
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 40
A 0.4 ID = 250 0A
'lo,' 0.2 / g
E 'w''" f 20
A -0.0
f: E N
8 / NN
> A) 2 'e,,,-''''" 10 "sc
-0 4 ‘~~.
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E 8 O 2
t g . Notes:
8 E 0.1 PDM
m a) 0.05 tl _
(-,-hE i te t.
E 1. Duty Cycle, D = T
s?, 0.02 2. Per Unit Base = Rth0A = 52°C/W
. 3. TJM - TA = PDMZthoA(t)
Single Pulse 4. Surface Mounted
10-4 1ty-3 Ity-i? 1O-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70768
6 S-56944-Rev. C, 23-Nov-98
:
www.loq.com
.
