SI4532CDY , N- and P-Channel 30 V (D-S) MOSFET
SI4532DY ,Dual N- and P-Channel Enhancement Mode Field Effect TransistorSi4532DYSeptember 1999Si4532DY*Dual N- and P-Channel Enhancement Mode Field Effect Transistor
SI4539ADY ,Complementary MOSFET Half-Bridge (N- and P-Channel)S-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
SI4539ADY ,Complementary MOSFET Half-Bridge (N- and P-Channel)S-03951—Rev. B, 26-May-032-1Si4539ADYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTE ..
SI4539ADY-T1 ,N- and P-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-1Si4539ADYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTE ..
SI4539ADY-T1 ,N- and P-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
S-L2980A15MC-TF-G , HIGH RIPPLE-REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2980A21MC-TF-G , HIGH RIPPLE-REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2980A34MC-TF-G , HIGH RIPPLE-REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2980A45MC-TF-G , HIGH RIPPLE-REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2985A25-H4T1 , HIGH RIPPLE-REJECTION WLP PACKAGE LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2985B33-H4T1 , HIGH RIPPLE-REJECTION WLP PACKAGE LOW DROPOUT CMOS VOLTAGE REGULATOR
SI4532ADY
EVALUATION KIT
VISHAY
Si4532ADY
New Product
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY ' (5)
VDs (V) rDS(on) (C2) ID (A) otf, tter
0.053 @ VGS = 10 v 4.9 e ttro
N-Channel 30 't It ,
0.075@Vss=4.5V 4.1 'ees''
0.080 ©Vss=-10V -3.9
P-Channel -30
0.135@VGs=-4.5V -3.0
G1 C)J
op Iew S1 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 10 secs Steady State 10 secs Steady State Unit
Drain-Source Voltage VDS 3O -30 V
Gate-Source Voltage V63 ck 20 i 20
TA = 25°C 4.9 3.7 -3.9 -3.0
Continuous Drain Current (To = 150°C)21 ID
TA = 70°C 3.9 2.9 -3.1 -2.4 A
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)" IS 1.7 0.94 -r7 -1.0
TA=25°C 2 1.13 2 1.2
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.73 1.3 0.76
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
N-Channel P-Channel
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 55 62.5 54 62.5
Maximum Junction-to-Ambient" RWA
Steady State 90 110 87 105 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rms: 40 50 34 45
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71133
S-00148-Reu, A, 07-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4532ADY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Vss, ID = 250 WA N-Ch 1.0
Gate Threshold Voltage Vss(th) V V I 250 A P Ch 1 0 V
DS = GS, D = - u - - V
VDs = 0 V, VGS = $20 V N-Ch cl: 100
Gate-Body Leakage IGSS V 0 V V 20 V P Ch 100 nA
DS = , GS = i - d:
Vos = 24 V, VGs = 0 V N-Ch 1
' VDS = -24 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss 11A
VDs=24 V,VGS=OV,TJ=55“C N-Ch 5
VDs=-24 V,VGS=OV, T: = 55°C P-Ch -5
v03 2 5 V, VGS = 10 v N-Ch 20
On-State Drain Currenta 'D(on) V V V 10 V P Ch 20 A
DS s -5 , GS = - - -
VGS = 10 V, ID = 4.9 A N-Ch 0.044 0.053
. . VGS = -10 V, ID = -3.9 A P-Ch 0.062 0.080
Drain-Source On-State Resistancea rcrs(on) Q
VGS = 4.5 V, ID = 4.1 A N-Ch 0.062 0.075
Vss=-4.5 V, ID =-3.OA P-Ch 0.105 0.135
VDS=15V,ID=4.9A N-Ch 11
Forward TraWaarna gts S
Vros=-15V, lro=-2.5A P-Ch 5
ls =1.7 A, VGS = o v N-Ch 0.80 1.2
Diode Forward Voltages VSD V
Is = -1.7 A, VGs = 0 V P-Ch Ah82 -1.2
Dynamicb
N-Ch 8 16
Total Gate Charge Qg
N-Channel P-Ch 10 20
kbs-- 10V, Vss=10V,lro=4.9A N-Ch 1.4
Gate-Source Charge Qgs P Ch 2 n0
P-Channel -
Vros=-4V, Vss=-10V,lo=-3.9A N-Ch 1.2
Gate-Drain Charge di P Ch 1 9
N-Ch 12 20
Turn-On Delay Time td(on)
P-Ch 8 15
N-Channel
N-Ch 10 20
Rise Time tr VDD =10 V RL =10 Q
|DE1A,VGEN=1OV,RG=69 P-Ch 9 18
Turn Off Delay Time t P-Channel N-Ch 23 45 ns
- d(ott) VDD---10V, RL=1OQ
ID a -1 A, 1/GEN---10V, Rs--60 P-Ch 21 40
N-Ch 8 15
Fall Time tf P Ch 10 20
Source-Drain t IF = 1.7 A, di/dt = 100 Alps N-Ch 25 4O
Reverse Recovery Time IF = -1.7 A, di/dt = 100 Alps P-Ch 27 40
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600
Document Number: 71133
S-00148-Reu, A, 07-Feb-00
VISHAY
Si4532ADY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
rDS(on) — On-Resistance(§2)
— Gate—to—Source Voltage (V)
Output Characteristics
// VGS =10thru 5V
/ /r W
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
Kas-- 10V
4 8 12 16 20
ID - Drain Current(A)
Gate Charge
I/os = 10 V
ID = 4.9 A
2 4 6 8
% - Total Gate Charge (nC)
roswn) — On-Resistance (Q)
I D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
N-CHANNEL
Transfer Characteristics
Tc = 125°C
25°C / /
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
's,.. Ciss
al'--..-,
_,",,",",), c
(hss oss
0 6 12 18 24 30
Vros - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1.8 I I
VGS = 10 V
1.6 - ID=4.9A //
1.4 /,
1.2 w,,,,,,,""'
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
Document Number: 71133
S-00148-Reu, A, 07-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4532ADY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A a 0.12
g g ( ID = 4.9 A
E Es' 0.09
0 To = 150°C 8
8 8 S.
w I 0.06
I A 's.
w s'??..
f 0.03
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 30
0.2 "ss,,,,, 24
ID = 250 11A l
i,' -0.0 N
E g 18
E -0 2 "sc lg N
> "N g
's,?..] n. 12 \
8 o 4 l
> - . "s, l
-0.6 's. ~.
"N, % \‘--u
-0.8 O
-50 -25 O 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E) Duty Cycle = 0.5
3?. 0.2
.8. g Notes:
g lg 0.1 PDM
g ff k
E tl _
ts -ly-1 t2 t1
2 I, Duty Cycle, D = T,
2. Per UnitBase = RNA = 90°C/W
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 Hr? IO-l
Square Wave Pulse Duration (sec)
10 100 600
www.vishay.com . FaxBack 408-970-5600
Document Number: 71133
S-00148-Reu, A, 07-Feb-00
VISHAY Si4532ADY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
3% 0.2
"f',' g
8 E‘ 0.1
Single Pulse
10-4 11H 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-GHANNEL
Output Characteristics Transfer Characteristics
20 I 20 I I I I
VGS =10thru 6 v Tc = -55°C /
16 I 16 l f
Ci..". 5 V :11: 25 C /
E E y 125°C
2 12 g 12
o (f o
Cl 8 D 8
I 4 V I
0 2 4 6 8 0 1 2 3 4 5 6 7
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.30 1000
F..'.. 0.24 A 800
S? 8 Ciss
tn C a.----,
g 0.18 g 600
6 VGS = 4.5 v "w''' ,r'js'
I o 12 w....---"'''" I 400 t
"ii," o.....-''' o
a VGS = 10 V
f y Coss
0.06 200 _
0 3 6 9 12 15 O 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Document Number: 71133 www.vishay.com . FaxBack 408-970-5600
S-00148-Reu, A, 07-Feb-00 2-5
Si4532ADY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Gate Charge On-Resistance vs. Junction Temperature
10 I 1.8 I I
A vDs=1ov VGS=1OV
2, |D=3.9A A 1.6 ID=3.9A l
ID G . -
fl? 8 pr G" w,,,,,'''''"
fg E 6 1 4 /
8 .IrLa' 0 . f
it 6 g (r", s,,,,,,,,,.'''"
.9 8 g 1 2
g. I V "
e; 4 A
I E 1.0
> o 8 s,,,,,,,,,,,,,,-'''''''
O 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A TJ = 150 C a 0.32
E Es' 0.24 ID = 3.9 A
w I 0.16
m s's.i,
f 0.08 -_-,
0 0.3 0.6 0.9 1.2 1.5 O 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 30
0.6 / \
b = 250 0A s,,p''' )
S 0.4 f
o / E 18
E 0.2 I a
A / t N
g: tl. 12
g o o l
> . 'ss,
-0 2 ",,e''''' 6 's
""s"..,
-0.4 o
-50 -25 0 25 50 75 100 125 150 10-2 IO-l 1 10 100
TJ - Temperature CC) Tlme (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71133
2-6 S-00148-Reu, A, 07-Feb-00
VISHAY
Si4532ADY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
-ly-1 F-
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 87°C/W
3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71133 www.vishay.com . FaxBack 408-970-5600
S-00148-Reu, A, 07-Feb-00 2-7
:
www.loq.com
.
