| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SI4501BDY |
VISHAY|Vishay |
N/a |
10000 |
 |
Complementary (N- and P-Channel) MOSFET |
| SI4501BDY |
SILICONIX |
N/a |
339 |
|
Complementary (N- and P-Channel) MOSFET |
SI4501DY SILICONIX,ABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol N-Channel P-Channel UnitDrain-Source Voltage V 30 -8DSV VGate-Source Volt ..
SI4501DY SILICONI,S-61812—Rev. B, 19-Jul-992-1Si4501DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED)JaParameter Symbol Test Condition Min ..
SI4501BDY , Complementary (N- and P-Channel) MOSFET
SI4501DY ,Complementary MOSFET Half-Bridge (N- and P-Channel)S-61812—Rev. B, 19-Jul-992-4Normalized Effective TransientV Variance (V) I - Source Current (A)SGS ..
SI4505DY ,N- and P-Channel MOSFETS-20829—Rev. A, 17-Jun-02 1Si4505DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI4505DY ,N- and P-Channel MOSFETS-20829—Rev. A, 17-Jun-02 3V – Gate-to-Source Voltage (V) r – On-Resistance ( ) I – Drain Curr ..
SI4511DY ,N- and P-Channel 20-V (D-S) MOSFETS-03987—Rev. A, 19-May-03 1Si4511DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
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