SI4482DY ,N-Channel, 100-V SingleS-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance (Ω ) I - Drain Curr ..
SI4482DY-T1 , N-Channel 100-V (D-S) MOSFET
SI4482DY-T1 , N-Channel 100-V (D-S) MOSFET
SI4483ADY , P-Channel 30-V (D-S) MOSFET
SI4483EDY-T1-E3 , P-Channel 30-V (D-S) MOSFET
SI4485DY , P-Channel 30 V (D-S) MOSFET
SL2150F , Front End Power Splitter with AGC
SL2150F , Front End Power Splitter with AGC
SL22 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbols SL22 SL23 UnitsDevice m ..
SL23 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERElectrical Characteristics (TA = 25°C unless otherwise noted)Parameter Symbols SL22 SL23 UnitsMaxim ..
SL2309SC-1H , Low Jitter and Skew 10 to 140 MHz Zero Delay Buffer (ZDB)
SL2364C , VERY HIGH PERFORMANCE TRANSISTOR ARRAYS
SI4482DY
N-Channel, 100-V Single
VISHAY
Si4482DY
Vishay Siliconix
N-Channel 1oo-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q)
0.060 @ VGS = 10 v
ID (A)
et,'',)
0.080 @ VGS = 6 V
4.0 't ste v',e,',ii"'
Top Jew
Orderinglnformation: Si4482DY
Si4482DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 100
Gate-Source Voltage VGS 120
TA = 25°C 4.6
Continuous Drain Current (T J = 150°C)a ID
TA = 70°C 3.7
Pulsed Drain Current bs, 40
Continuous Source Current (Diode Conduction)" ls 2.1
TA = 25°C 2.5
Maximum Power Dissipation" PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70749 www.vishay.com
S-03951-Rev. B, 26-May-03
Si4482DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 WA 2 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V d: 100 nA
VDs=100V,VGs=0V 1
Zero Gate Voltage Drain Current 'Dss WA
VDS=1OOV,VGS=OV,TJ=55°C 20
On-State Drain Currentb low") VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, b = 4.6 A 0.045 0.060
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 6 V, ID = 4.0 A 0.050 0.080
Forward Transconductanceb gts VDS = 15 V, ID = 4.6 A 20 S
Diode Forward Voltageb VSD ls = 2.1 A, l/ss = O V 1.2
Dynamica
Total Gate Charge % 30 50
Gate-Source Charge Qgs Vos = 50 V, VGS = 10 V, ID = 4.6 A 7.5 nC
Gate-Drain Charge di 7
Gate Resistance R9 1 4.4 Q
Turn-On Delay Time td(on) 13 25
Rise Time tr VDD = 50 V, RL = 50 Q 12 25
Turn-Off Delay Time taom ID _ 1 A, VGEN = 10 V, RG = 6 Q 60 90 ns
Fall Time if 25 40
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 Alps 50 80
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
www.vishay.com Document Number: 70749
2-2 S-03951-Rev. B, 26-May-03
VISHAY
Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40 1 1 , 40
VGS=10thru6V ,,i;'/''''"
30 tg3
a? 5 V a?
5 20 7’ <3 I
E' E' 16
I I TC = 125''C
D 10 D _
- _ 8 1
1,2,3V 4V 250 \/l
l ./ 1 l l -55°C
0 l" 1 I 0 J 1
0 0 0.5 1 0 1 5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 2500
A 0.08 2000 C., ISS
8 _,,,---''"' 9
E - (D
.3 0.06 - VGS - 6 V o....----""''','.,"....----' g 1500
e2: -.--------""" [ii,
6 0.04 VGs=10V _ 8 1000
"ic,' o
f? 0.02 500 Coss
Crss "m-....-,
0.00 O
0 10 20 30 40 0 20 40 60 80 100
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
10 Gate Charge 2 On-Resistance vs. Junction Temperature
VDS=50V Vss=10V
g 8- b--4.6A A 2.0-lro--4.6A I
8, Ct ',,,p'''"
2 s w''''
i; 6 oi). "io,'" 1.5 ",-"
L' ft-' .5
J,' i','' ' /
ti,'. 4 / t :2 1.0
8 / bs, o.,,,,--'''''''''
U, 2 g 0.5
0 6 12 18 24 30 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) Tu - Junction Temperature CC)
DocumentNumber: 70749 www.vishay.com
S-03951-Rev. B, 26-May-03
Si4482DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
40 0.10
A 0.08
':'-f: tf ( ID = 4.6 A
2 10 fi. J06
o ‘07; Ns,,,.,
g T J = 150°C ml ¥
Js,' 6 0.04
b' 0.02
1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 50 l
0.3 's, 40
g 0.0 \
8 ID = 250 [1A E 30 A1
a "sc v 1
E -0 3 a
> "N a
g." g? 20 k
>5 -0.6 N,
-0.9 \ 10 "s,
N " "-
-1.2 0
-50 -25 O 25 50 75 100 125 150 0.01 0.10 1.00 10.00
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = RNA = 50°CIW
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = PoMZthoA(t)
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 IO-l 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70749
2.4 S-03951-Rev. B, 26-May-03
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