SI4467DY ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Power managementlow RDS(ON)• Load s ..
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SI4467DY
P-Channel 1.8V Specified PowerTrench MOSFET
Si4467DY January 2001 Si4467DY P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged • –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 10.5 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power R = 14 mΩ @ V = –1.8 V management applications with a wide range of gate DS(ON) GS drive voltage (1.8V – 8V). • Fast switching speed Applications • High performance trench technology for extremely • Power management low R DS(ON) • Load switch • High current and power handling capability • Battery protection D D 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) A D –13.5 – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.5 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4467 Si4467DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si4467DY Rev A
