SI4463DY ,P-Channel 2.5V Specified PowerTrench MOSFETSi4463DYJanuary 2001Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET
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SI4463DY
P-Channel 2.5V Specified PowerTrench MOSFET
Si4463DY January 2001 Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged • –11.5 A, –20 V. R = 12 mΩ @ V = –4.5 V DS(ON) GS gate PowerTrench process. It has been optimized for R = 17.5 mΩ @ V = –2.5 V DS(ON) GS power management applications with a wide range of gate drive voltage (2.5V – 12V). • Fast switching speed. Applications • High performance trench technology for extremely • Power management low R DS(ON) • Load switch • High power and current handling capability • Battery protection D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1a) –11.5 A D – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4463 Si4463DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si4463DY Rev A(W)
