| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SI4463CDY |
VISHAY|Vishay |
N/a |
10000 |
 |
P-Channel 2.5 V (G-S) MOSFET |
SI4463D Fairchild
SI4463DY SI,Applications• High performance trench technology for extremely• Power managementlow RDS(ON)• Load switch• High power and current handling capability• ..
SI4463DY VISHAY,S-20117—Rev. A, 11-Mar-02 1Si4463DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED)JParameter Symbol Test Condition Min Ty ..
SI4463DY SILICONIX,FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –11.5 A, –20 V. R = 12 mΩ @ V = –4.5 VDS(ON) GSgate PowerTrench process. It has been opti ..
SI4463DY Siliconix ,applications with a wide range ofgate drive voltage (2.5V – 12V).• Fast switching speed.
SI4463CDY , P-Channel 2.5 V (G-S) MOSFET
SI4463DY ,P-Channel 2.5V Specified PowerTrench MOSFETSi4463DYJanuary 2001Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET
SI4464DY ,N-Channel 200-V (D-S) MOSFETS-22099—Rev. A, 02-Dec-02 1Si4464DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI4465ADY , P-Channel 1.8-V (G-S) MOSFET
SI4465ADY , P-Channel 1.8-V (G-S) MOSFET
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