SI4442DY ,N-Channel FET Synchronous Buck Regulator Controller for Low Output VoltagesS-03662—Rev. B, 14-Apr-031Si4442DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
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SI4442DY
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages
VISHAY
Si4442 DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (C2) ID (A)
00045 @ VGS = 10 v 22
30 0.005 @VGS=4.5V 19
0.0075 @ VGS = 2.5 v 17
owcncn
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V03 30
Gate-Source Voltage Ves i 12
TA = 25°C 22 15
Continuous Drain Current (T J = 150°C)a ID
TA = 70''C 17 11
Pulsed Drain Current (10 us Pulse V1hdth) IBM 60
Continuous Source Current (Diode Conduction)" ls 2.9 1.3
TA = 25°C 3.5 1.6
Maximum Power Dissipation" PD W
TA = 70°C 2.2 1
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 29 35
Maximum Junction-to-Ambient" RthJA
Steady State 67 80 "CAN
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
a. Surface Mounted on 1"x1"FR4 Board.
Document Number: 71358
S-03662-Rev. B, 14-Apr-03
www.vishay.com
Si4442 DY
N=iiir
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 LA 0.6 V
Gate-Body Leakage ksss VDS = 0 V, VGS = ck 12 V i 100 nA
VDS=24V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=55c'C 5 ”A
On-State Drain Current3 'D(on) VDS 2_' 5 V, VGS = 10 V 30 A
VGS = 10 V, lry = 22 A 0.0035 0.0045
Drain-Source On-State Resistancea rDs(on) VGS = 4.5 V, ID = 19 A 0.0041 0.005 Q
VGS = 2.5 V, b = 17 A 0.0062 0.0075
Forward Transconductancd1 gfs VDS = 15 V, ID = 22 A 100 S
Diode Forward Voltagea VSD ls = 2.9 A, VGS = 0 V 0.75 1.1
Dynamicb
Total Gate Charge Q9 36 50
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 22 A 8 nC
Gate-Drain Charge di 10.5
Gate Resistance Rs 0.5 1.5 2.6 Q
Turn-On Delay Time tdmn) 17 30
Rise Tlme tr VroD=15V,RL--15Q 11 20
Turn-Off Delay Time tam ko - 1 A, VGEN = 10 V Rs = 6 Q 125 180 ns
Fall Tlme tf 47 70
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
I N/ss-- 5thru 2.5V
C:" 40
E I 2 v
to 30 4L
O 1 2 3 4
Vos - Drain-to-Source Voltage (V)
Transfer Characteristics
ID — Drain Current (A)
0.5 1.0 1.5 2.0 2.5
V68 - Gate-to-Source Voltage (V)
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DocumentNumber: 71358
S-03662-Rev. B, 14-Apr-03
VISHAY
Si4442 DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on) — On—Resistance( g2)
- Gate—to-Source Voltage (V)
ls - Source Current(A)
On-Resistance vs. Drain Current
VGS = 2.5 V
VGS = 4.5 V
0 10 20 30 40 50 60
ID - Drain Current (A)
Gate Charge
VDS = 15 V
8 ID = 22 A /
0 20 40 6O 80 1 00
Qg - TotalGate Charge(nC)
Source-Drain Diode Forward Voltage
To-- 150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDS(0n) - On-Resistance(9)
(Normalized)
rosmn) — On-Resistanoe ( Q
Capacitance
5000 It
Iss,.,, Ciss
4000 r
3000 l
(Ns, Coss
1000 \
'ss...........,
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 I l
VGS = 4.5 V /
1.6 - ID = 22 A r
1.4 //
1.2 //
0.8 w,,,,,,,,,,,,,,-"''''''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.008 (
ID = 22 A
0.004 ¥
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
DocumentNumber: 71358
S-03662-Rev. B, 14-Apr-03
www.vishay.com
. N=iiir
Si4442DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 60
0.2 "ss,,,,, 50
A ID = 250 11A l
a -0.0 40
g N. v 30 (
m -0.2 t,
g? "N, s2 \
if o 4 20 L
-0.6 k 10 ‘n
'N, ~--.... ‘~--
-O.8 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
T J - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E: Duty Cycle = 0.5
st, 'h'
g 3 0.2
il=,' a 0.1 T
8 E 0.1 Pf“
F, ‘L H,
a 1. Duty Cycle, D = (-1,
2. Per Unit Base = Rth0A = 67°CNV
. 3. TJM - TA = PDMZthJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
, a 0.2
if',' g
E E 0.1
E g 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71358
S-03662-Rev. B, 14-Apr-03
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