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SI4435DYTRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95133
International
TOR Rectifier Si4435DYPbF
HEXFET© Power MOSFET
q Ultra Low On-Resistance
o P-Channel MOSFET SHIT In, D
0 Surface Mount SD32 H 7 D VDSS = -30V
0 Available in Tape & Reel 3 :3 em
0 Lead-Free s cm m: D
G CED“ SEED D RDS(on) = 0.020Q
Top View
Description
These P-channel HEXFETO Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. 1/Nfhh these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA-- 70°C Continuous Drain Current, VGS @ -10V -6.4 A
IDM Pulsed Drain Current (D -50
Pro @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage * 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 °C/W
1
09/30/04
Si4435DYPbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = OV, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.019 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.01 5 0.020 g VGS = -10V, ID = -8.0A ©
- 0.026 0.035 VGS = -4.5V, ID = -5.0A ©
Vesgh) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250PA
gfs Forward Transconductance - 11 - S Vos = -15V, ID = -8.0A
loss Drain-to-Source Leakage Current _- _- lg pA V3: , :m V: , g, T: = 70''C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Qg Total Gate Charge - 4O 60 ID = -4.6A
Q95 Gate-to-Source Charge - 7.1 - nC Vos = -15V
di Gate-to-Drain ("Miller") Charge - 8.0 - VGS = -10V ©
tdwn) Turn-On Delay Time - 16 24 VDD = -15V, VGS = -10V ©
tr Rise Time - 76 110 ns lo = -1.0A
Mott) Turn-Off Delay Time - 130 200 Rs = 6.09
tr Fall Time - 90 140 RD = 159
Ciss Input Capacitance - 2320 - Vss = 0V
Cass Output Capacitance - 390 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 270 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 A showing the
ISM Pulsed Source Current - - -50 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, IS = -2.5A, VGS = 0V ©
trr Reverse Recovery Time - 34 51 ns To = 25°C, IF = -2.5A
Q,, Reverse Recovery Charge - 33 50 nC di/dt = -100Alps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts Ssec.
max. junction temperature.
© Pulse width S 300ps; duty cycle s 2%.
2
