SI4435DY-TR ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93768ASi4435DY®HEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETV = -30VDSS ..
SI4435DY-TR ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devicescan be used in an application with dramatic ..
SI4435DYTRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devicescan be used in an application with dramatic ..
SI4436DY , ISL6844 Reference Design: ISL6844EVAL3Z
SI4436DY-T1-E3 , N-Channel 60-V (D-S) MOSFET
SI4442DY ,N-Channel FET Synchronous Buck Regulator Controller for Low Output VoltagesS-03662—Rev. B, 14-Apr-031Si4442DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SL1TTE13L0F , Surface mount molded current sense resistors
SL1TTE13L0F , Surface mount molded current sense resistors
SL2009 , Dual stage IF amplifier for cable tuners
SL2009 , Dual stage IF amplifier for cable tuners
SL2015 , Full Band Satellite Tuner
SL2055 , PREAMPLIFIER FOR REMOTE CONTROL USE
SI4435DYTR-SI4435DY-TR
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93768A
International .
TOR Rectifier Si4435DY
HEXFET© Power MOSFET
0 Ultra Low On-Resistance
o P-Channel MOSFET s m1 - In, D
0 Surface Mount s m2 _ 7 D VDSS - -30V
o Available in Tape & Reel 3 I' m
s DE In, D
G C334 SEE) RDS(on) = 0.020Q
. . T View
Description op
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This beneht provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized f“ w'.. ,
leadframe for enhanced thermal characteristics and J/lie''"
multiple-die capability making it ideal in a variety of power _
applications. l/Wh these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA-- 70°C Continuous Drain Current, VGs @ -10V -6.4 A
IDM Pulsed Drain Current (D -50
Pro @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/''C
VGs Gate-to-Source Voltage i 20 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
' Maximum Junction-to-Ambient® 50 °CNV
1
10/14/99
Si4435DY International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, lo = -250pA
AWBRDSSIATJ Breakdown Voltage Temp. Coemcient - -0.019 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 0.015 0.020 Q l/ss = -10V, ID = -8.0A ©
- 0.026 0.035 VGs = -4.5V, ID = -5.0A ©
Ves(m) Gate Threshold Voltage -1.0 - - V VDs = Was, ID = -250pA
gts Forward Transconductance - 11 - S I/rs = -15V, ID = -8.0A
loss Drain-to-Source Leakage Current : : J] pA $2: , :m x: J. g, TJ = 70°C
Isss Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Qg Total Gate Charge - 40 60 ID = -4.6A
Qgs Gate-to-Source Charge - 7.1 - nC VDs = -15V
di Gate-to-Drain ("Miller") Charge - 8.0 - Vss = -10V ©
tdon) Turn-On Delay Time - 16 24 VDD = -15V, I/ss = -10V ©
tr Rise Time - 76 110 ns ID = -1.0A
tam) Turn-Off Delay Time - 130 200 Rs = 6.09
If Fall Time - 90 140 RD = 159
Ciss Input Capacitance - 2320 - Ves = 0V
Coss Output Capacitance - 390 - pF Ws = -15V
Crss Reverse Transfer Capacitance - 270 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 A showing the
ISM Pulsed Source Current - - -50 integral reverse a
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V TJ = 25°C, IS = -2.5A, l/ss = 0V ©
trr Reverse Recovery Time - 34 51 ns TJ = 25°C, IF = -2.5A
G, Reverse Recovery Charge - 33 50 nC di/dt = -100/Ups ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, t s 5sec.
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
2
