SI4430DY ,N-Channel 30-V (D-S) MOSFETS-03662—Rev. C, 14-Apr-032-3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resista ..
SI4431 ,P-Channel Logic Level PowerTrench MOSFETSi4431DYJanuary 2001Si4431DY P-Channel Logic Level PowerTrench MOSFET
SI4431ADY ,P-Channel 30-V (D-S) MOSFETS-95713—Rev. C, 18-Feb-02 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4431BDY ,P-Channel 30-V (D-S) MOSFETS-22437—Rev. A, 20-Jan-03 1Si4431BDYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHE ..
SI4431BDY ,P-Channel 30-V (D-S) MOSFETS-22437—Rev. A, 20-Jan-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4431CDY , P-Channel 30-V (D-S) MOSFET
SL1711 , Quadrature Downconverter
SL1711 , Quadrature Downconverter
SL1711B , Quadrature Downconverter
SL1711B , Quadrature Downconverter
SL1714 , Quadrature Downconverter
SL1714C , Quadrature Downconverter
SI4430DY
N-Channel 30-V (D-S) MOSFET
VISHAY
New Product
Si4430DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
30 0.004 (typ)@ l/ss = 10 v :1: 23
0.008@VGs=4.5V i17
O(IJUJUJ
Top Vew
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGS $20
TA = 25°C d: 23 ct: 15
Continuous Drain Current (T J = 150°c)a ID
TA = 70''C 1 19 k 12
Pulsed Drain Current (10 us Pulse VWdth) IDM i60
Continuous Source Current (Diode Conduction)" ls 2.9 1.3
TA = 25°C 3.5 1.6
Maximum Power Dissipation" PD W
TA = 70°C 2.2 1
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 29 35
Maximum Junction-to-Ambienta R
Steady State WA 67 80 ''CA/V
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 70852 www.vishay.com
S-03662-Rev. C, 14-Apr-03
Si4430DY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(1h) VDs = Kas, ID = 250 MA 1.7 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 30 A
I/ss = 10 V, ID = 23 A 0.004
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5V, ID: 17A 0.0068 0.008
Forward Transconductancea 9ts Vos = 15 V, ID = 23 A 80 S
Diode Forward Voltage" I/sro Is = 2.9 A, Veg = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 36 55
Gate-Source Charge Qgs VDs = 15 V, VGS = 4.5 V, ID = 23 A 15 nC
Gate-Drain Charge di 12
Gate Resistance Re 1.0 2.2 3.7 Q
Turn-On Delay Time thon) 20 30
Rise Time tr V00: 15V, RL=159 15 23
Turn-Off Delay Time tam) '0 E 1 A, VGEN = 10 V, Re = 6 Q 105 160 ns
Fall Time tf 40 6O
Source-Drain Reverse Recovery Tlme trr IF = 2.9 A, dildl = 100 Alps 50 8O
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60 l so ,
V =10thru4V ll
50 l;/ GS 50 / I
Ct 40 g.] 40 j
it 30 / t 30 Ill
tD 20 CI 20 I
T =125°C
f 3V f ') 1 / /
10 10 25°c\11
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage(V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
Document Number: 70852
S-03662-Rev. C, 14-Apr-03
VISHAY
Si4430DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
- On-Resistance ( Q)
rDS(on)
V GS - Gate-to-Source Voltage (V)
Is - Source Current(A)
On-Resistance vs. Drain Current
VGS = 4.5 V
0.006 _
VGS = 10 V
O 10 20 30 40 50 60
ID - Drain Current (A)
Gate Charge
I/os = 15 V
8 7 ID = 23 A
O 20 40 60 80
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ=150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) - On-Resistance(§2)
(Normallzed)
roswn) » On-Resistance (Q)
Capacitance
5000 \\_ Ciss
2000 l
0 6 12 18 24 30
1/ros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS=10V /
1.6- ID=23A "
1.4 ,,,,ww''''''''
',,,e'''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.006 N,
lro=23 A
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 70852
S-03662-Rev. C, 14-Apr-03
www.vishay.com
Si4430DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
0.2 Nc ID = 250 " 50
-0.0 "ss
Threshold Voltage Single Pulse Power
"s, l l 60
"s, 40
-0.2 'ss, it (
-0.4 "s, E l
-0.6 'N N
-0.8 \ IO
N \~-IIII
-1.0 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g E 0.2
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
Iz'jz' l
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 67°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
Il a 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70852
2-4 S-03662-Rev. C, 14-Apr-03
:
www.loq.com
.
