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SI4427DYVISHAYN/a498avaiP-Channel 30-V (D-S) MOSFET


SI4427DY ,P-Channel 30-V (D-S) MOSFETS-01828—Rev. A, 21-Aug-00 1Si4427DYNew ProductVishay Siliconix 

SI4427DY
P-Channel 30-V (D-S) MOSFET
VISHAY Si4427DY
New Product Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY tts
Vos (V) rDSion) (C2) ID (A) Stl!),?
0.0105 @ VGS = -10 v -13.3 igtli,'sGss
-30 0.0125 v = -45 v -12.2 't et
@ GS 90“:
0.0195 @ VGS = -2E V -9.8
S0-8 Ill
G o-il-E
s D F-s
Top View HE
D D D D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage VGS i 12
TA = 25°C -132 -9.4
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C -10.7 -7.5 A
Pulsed Drain Current IBM -50
continuous Source Current (Diode Conduction)'' ls -2.5 -1.3
TA = 25°C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70°C 1.9 0.9
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 32 42
Maximum Junction-to-Ambient" RthJA
Steady State 68 85 "C/W
Maximum Junction-to-Foot (Drain) Steady State Rm}: 15 18
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71308 www.vishay.com
S-01828-Rev. A, 21-Aug-00
Si4427DY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 11A -0.60 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 12 V cl: 100 nA
VDs=-24V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
VDs = -24 V, VGS = 0 V, TJ = 55°C -5
On-State Drain Currenta IDmn) VDS s -5 V, VGS = -10 V -50 A
Ves = -10 V, ID = -13.3 A 0.0086 0.0105
Drain-Source On-State Resistancea roman) VGs = -A.5 V, ID = -12.2 A 0.0105 0.0125 Q
Vss=-2.5 V, ID: -9.8A 0.0165 0.0195
Forward Transconductancea Ws VDs = -1 5 V, ID = -13.3 A 40
Diode Forward Voltage" VSD ls = -2.5 A, VGS = 0 V Ah8 -1.2 V
Dynamicb
Total Gate Charge Q9 47 70
Gate-Source Charge Qgs VDs = -15 V, VGS = -4.5 V, ID = -13.3 A 20 nC
Gate-Drain Charge di 8.3
Turn-On Delay Time tdwn) 16 25
Rise Time tr VDD = -15 V, RL = 15 Q 12 20
Turn-Off Delay Tlme tam) Ir, E -1 A, VGEN = -10 V, Rs = 6 Q 220 330 ns
Fall Time k 70 110
Source-Drain Reverse Recovery Time trr IF = Al.5 A, di/dt = 100 Alps 50 80
a. Pulse test; pulse width S 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50 l I 50
VGS=1Othru3V
ig' .?-i".
E 30 E 30
E 20 E 20
f f Tc = 125°C I
10 2 V 10 i I A y
l ps. -55''C,
0 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com DocumentNumber: 71308
S-01828-Rev. A, 21 -Aug-00
VISHAY
Si4427DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025 /
w v = 2.5 v /
f1i. 0.020 /
E w,,,,,,-'''''
8 0.015 I
I VGS = 4.5 V
CSi" 0.010
VGS = 10 V
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
10 l l (
VDS = 15 V
E ID = 13.3 A /
O 20 40 60 80 100 120
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
I s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
0 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
VGS= 10V
ID=13.3A
0.8 w,,,,,,.''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.020 ID = 13.3 A
0.010 "s.,
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71308
S-01828-Rev. A, 21-Aug-00
www.vishay.com
Si4427DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 50
0.4 w''''" ,,,,W''' 40
g ID = 250 11A "
g 0.2 E 30
ef.?.: 0.0 CL 29
.,-'''' S,
-0 2 // 10 t
"ss,..",.
...‘___-
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
E; 0.1 ''r
E _ 0.05
g -ly-1 te
a 0.02 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 68°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
, E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71308
4 S-01828-Rev. A, 21-Aug-00
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