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SI3460DVVISHAYN/a61000avaiN-Channel 20-V (D-S) MOSFET


SI3460DV ,N-Channel 20-V (D-S) MOSFETS-02448—Rev. A, 06-Nov-001Si3460DVNew ProductVishay Siliconix      ..
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SI3460DV
N-Channel 20-V (D-S) MOSFET
Si3460DV
VISHAY
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (C2) ID (A)
0.027 @ l/ss = 4.5 v 6.8
20 0.032 @ VGS = 2.5 v 6.3
0.038@VGS= 1.8V 5.7
TSOP-6
Top View
m [Dz 5CD
_ 2.85 mm
(1,2,5,6)D
(3)G OJ
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS
Gate-Source Voltage VGS
TA = 25"C 6.8 5.1
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C 5.4 4.1
Pulsed Drain Current IDM
Continuous Source Current (Diode Conduction)" ls 1.7 0.9
TA = 25°C 2.0 1.1
Maximum Power Dissipation" PD W
TA=7O°C 1.3 0.73
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 45 62.5
Maximum Junction-to-Ambienta R
Steady State WA 90 110 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30
a. Surface Mounted on l" x l" FR4 Board.
Document Number: 71329
S-02448-Rev. A, 06-Nov-00
www.vishay.com
. C=7'"
Si3460DV VISHAY
Vishay Siliconix New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 1 mA 0.45 V
Gate-Body Leakage less VDS = 0 V, VGs = i8 V ch 100 nA
VDS=16V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDS=16V,VGS=0V,TJ=7O°C 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 10 V 20 A
VGS = 4.5 v, ID = 5.1 A 0023 0.027
Drain-Source On-State Resistancea rDs(on) VGS = 2.5 V, ID = 4.7 A 0.027 0.032 Q
l/ss-- 1.8 V, ID=2A 0.032 0.038
Forward Transconductancd1 gfs I/os = 10 V, ID = 5.1 A 25 S
Diode Forward Voltagea VSD ls = 1.7 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Qg 13.5 20
Gate-Source Charge Qgs 1/ros = 10 V, VGS = 4.5 V, ID = 5.1 A 2.3 nC
Gate-Drain Charge di 2.2
Turn-On Delay Tlme lawn) 15 30
Rise Time tr VDD = 10 V, RL = 10 Q 30 60
Turn-Off Delay Tlme tam) ID _ 1 A, VGEN = 4-5 V, Re = 6 Q 70 140 ns
Fall Time if 30 60
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 NPs 40 80
a. Pulse test; pulse width 5 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 20 I
Tc = -551
I VGS = J thru 2 v l
16 f 16 250 C
Ct , ig"
"ic?,' 12 "t' 12 r
is I 1 5 V a'iz-,s 125°C
S 8 E 8
Cl Cl /
- 4 - 4 7
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.4 0.8 1.2 1.6 2.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage(V)
www.vishay.com Document Number: 71329
2 S-02448-Reu A, 06-Nov-00
VISHAY
Si3460DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.06 / 2000
9’, / A 1600
8 ''''' b,
ii. 0.04 VGs = 1.8 v I g Ciss
g s...,.-.--'''''''"" g 1200
n; ----" Vcs = 2.5 v 3
6 0.03 g
I I 800
c 0.02 - - o
ij?,- VGS - 4.5 V
0.01 rss C
0.00 0
0 4 8 12 16 20 o 4 8 12 16 20
ID - Drain Current (A) I/os - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 l 1.6 l l
VDs=10V Vss=4.5V
S ID=5.1A A ID=5.1A
8, 4 at Cj.. 1.4 /
2 tD /
8 Es' S
's 3 I 8 = 1.2
o tyt m
u? g: g 'w''"
L? C) 2
to 2 I 1.0
CI) -.,w''" g
m g w,,-'''''
J) 1 '- 0 8 l
0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
\ ID-- 5.1A
20 0.06
TJ = 150°C
A 0.05
A 10 o:
S. i,;
Is' g 0.04
G.) tyt
L5, c': 0.03
I A 0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0
VSD - Source-to-Drain Voltage (V)
1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71329
S-02448-Rev. A, 06-Nov-00
www.vishaycom
Si3460DV
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Vegan) Variance (V)
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient
Thermal Impedance
Threshold Voltage Single Pulse Power
0.2 30
0.1 "s, 24
ID = mA
-0 1 'N. t, o
s, 5 TA - 25 C
Cl. 12
-0.2 N
- \ 6 ';
0.3 N, "ss.
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-2 IO-l 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 F’DM
_.L: _
1. Duty Cycle, D = T
2. Per Unit Base = RmJA = 90°C/W
3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 1o-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 1ty-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71329
S-02448-Reu A, 06-Nov-00
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