SI3458DV ,N-Channel 60-V (D-S) MOSFET FaxBack 408-970-5600S-61517—Rev. B, 12-Apr-992-1Si3458DVNew ProductVishay Siliconix
SI3458DV
N-Channel 60-V (D-S) MOSFET
VISHAY
Si3458DV
New Product Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
TSOP-6
Top View
3mm m2 5D]
PRODUCT SUMMARY
VDs (V) rDS(on) (O) ID (A) (5)
60 0.10@sz= 10 v i3.2 spif
0.13@Vss= 4.5 v i2.8 “ s
G r'ts't
1tet', bos
't 'ik'''
(1,2, 5, 6)D
(3)G o-]
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS i60
Gate-Source Voltage VGs 120
TA = 25°C ck 3.2
Continuous Drain Current (TJ = 15ty'C)a, b ID
TA = 70°C $205
Pulsed Drain Current IDM ck 15
Single Avalanche Current bs ck 10
TA = 25°C 2
Maximum Power Dissipation' b PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 62.5
Maximum Junction-to-Ambient" RthJA
Steady State 106 "C/W
Maximum Junction-to-Lead Steady State RthJL 35
a. Surface Mounted on FR4 Board,
b. t s Ssec.
DocumentNumber: 70859
S-61517-Rev, B, 12-Apr-99
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Si3458DV VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 WA 60 V
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 HA 1
Gate-Body Leakage less VDS = 0 V, VGS = d: 20 V i 100 nA
VD3=48V,VGs=OV 1
Zero Gate Voltage Drain Current '088 [LA
VDS=48 V,VGS=0V, TJ=150DC 50
On-State Drain Current3 bon) VDS = 5 V, VGS = 10 V 10 A
Vss=10V, ID=3.2A 0.085 0.10
Drain-Source On-State Resistance" rDS(0n) Q
Vss--4.5V,lrs=2.8A 0.110 0.13
Forward Transconductancea 9ts VDs = 4.5 V, ID = 3.2 A 8 S
Dynamicb
Total Gate Charge Q9 8 16
Gate-Source Charge Qgs VDs = 30 V, VGS = 10 V, b = 3.2 A 4.0 nC
Gate-Drain Charge di 2.0
Turn-On Delay Time tdon) 10 20
Rise Time tr VDD = 30 V, RL = 30 Q 10 20 ns
Turn-Off Delay Time td(ott) ID _ 1 A, VGEN = 10 V, Rs = 6 Q 20 40
Fall Time k 10 20
Source-Drain Rating Characteristics"
Continuous Current ls 1.7
Pulsed Current ISM 15
Diode Fon/vard Voltagea VSD Is = 1.7 A, l/ss = 0 V 1.2 V
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 50 90 ns
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-61517-Rev. B, 12-Apr-99
VISHAY
Si3458DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
V68 =10thru 5 V
12 f/f
Ci.] y)
E 9 y 4 v
0 1 2 3 4
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.16
g VGS = 4.5 V ,,,,,,.,W'''/
75 0.12 w,,,,.-"'
d? -------"''"" VGS = 10 V
I 0.08
f 0.04
0 3 6 9 12 15
ID - Drain Current (A)
1 0 Gate Charge
A Vos = 30 V
ty ID = 3.2 A
a) 8 -
fill p"
g o,,/'''
ti) 4 /
I o//''"
0 2 4 6 8
% - Total Gate Charge (nC)
rDS(on) — On-Resistance (Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
To = 125°C
25 C tsf -55'' C
0 1 A l
0 1 2 3 4 5
Was - Gate-to-Source Voltage (V)
Capacitance
400 _..-, Ciss
100 Cass
Crss ....-,
0 10 20 30 4O 50 60
V95 - Drain-to-Source Voltage (V)
2 0 On-Resistance vs. Junction Temperature
VGS = 10 v /
ID = 3.2 A /
1.2 s,,,,,,,,,,,,,,,,,""'''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
DocumentNumber: 70859
S-61517-Rev, B, 12-Apr-99
www.vishay.com . FaxBack 408-970-5600
Si3458DV
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGs(th) Variance (V) Is — Source Current(A)
Normalized Effective Transient
Thermal Impedance
Source-Drain Diode Forward Voltage
T: = 150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VsD - Source-to-Drain Voltage (V)
Threshold Voltage
"sssc,_l.,e,.,,,l
_ ID = 250 wk
-0.6 'N,
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
rDsmm — On-Resistance (9
Power (W)
On-Resistance vs. Gate-to-Source Voltage
0.16 K
0.12 'ss,,,
ID = 3.2 A
2 4 6 8 10
vss - Gate-to-Source Voltage (V)
Single Pulse Power
0.001 0.01 0.1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2
Square Wave Pulse Duration (sec)
Notes:
-ly-1 _
1. Duty Cycle, D =
2. Per Unit Base = RthoA =106°CNV
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
10 100 600
www.vishay.com . FaxBack 408-970-5600
Document Number: 70859
S-61517-Rev. B, 12-Apr-99
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