SI3457DV_NL ,Single P-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Battery management • ..
SI3458BDV , N-Channel 60-V (D-S) MOSFET
SI3458BDV , N-Channel 60-V (D-S) MOSFET
SI3458DV ,N-Channel 60-V (D-S) MOSFET FaxBack 408-970-5600S-61517—Rev. B, 12-Apr-992-1Si3458DVNew ProductVishay Siliconix
SI3457DV_NL
Single P-Channel Logic Level PowerTrench MOSFET
Si3457DV April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –4 A, –30 V. R = 50 mΩ @ V = –10 V DS(ON) GS using Fairchild’s advanced PowerTrench process. It R = 75 mΩ @ V = –4.5 V DS(ON) GS has been optimized for battery power management applications. • Low gate charge Applications • High performance trench technology for extremely low R DS(ON) • Battery management • Load switch • Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 I Drain Current – Continuous (Note 1a) –4 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .457 Si3457DV 7’’ 8mm 3000 units Si3457DV Rev A1 (W) 2001
