SI3454ADV ,30-V (D-S) Single FaxBack 408-970-5600S-99548—Rev. A, 20-Dec-992-1Si3454ADVNew ProductVishay Siliconix
SI3454ADV
30-V (D-S) Single
VISHAY
Si3454ADV
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
“Q tts
git? 'sts
PRODUCT SUMMARY ttlt, “a
VDs (V) rosmn) (Q) ID (A) tto
30 0.060@VGS=10V 3:45
0.085@VGS = 4.5V 21:38
(1, 2, 5, 6) D
TSOP-6
Top View
I CE 1 6 TI
3 mm CE 2 5 TI (3) G o-]
i CE a 4 TI
_ 2.85 mm _ (4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGs i 20
TA-- 25''C $4.5 $3.4
Continuous Drain Current (TJ = 15ty'C)a ID
TA=70°C $3.6 i2] A
Pulsed Drain Current (10 us Pulse 1Mdth) IBM 1 20
Continuous Source Current (Diode Conduction)" Is 1.7 1.0
TA=25°C 2.0 1.14
Maximum Power Dissipationa PD W
TA = 70°C 1.3 0.73
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 62.5
Maximum Junction-to-Ambient" RNA
Steady State 90 110 °CIW
Maximum Junction-to-Foot (Drain) Steady State Rm“: 30 36
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71108
S-99548-Rev. A, 20-Dec-99
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Si3454ADV VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 11A 1.0 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V i 100 nA
VDs=30V,VGs=0V 1
Zero Gate Voltage Drain Current loss pA
Vros=30V,Vss--0V,Tu=70oC 25
On-State Drain Current3 low") VDS 2 5 V, VGS = 10 V 15 A
. . VGS = 10 V, ID = 4.5 A 0.048 0.060
Drain-Source On-State Resistances rDS(on) Q
VGS = 4.5 V, ID = 3.8 A 0.070 0.085
Forward Transconductancea gfs Vos = 10 V, ID = 4.5 A 10 S
Diode Forward Voltagea VSD ls = 1.7 A, VGS = O V 0.8 1.2
Dynamic"
Total Gate Charge Q9 9 15
Gate-Source Charge Qgs Vos = 15 V, VGS = 10 V, ID = 4.5 A 2.5 nC
Gate-Drain Charge ' 1.5
Turn-On Delay Time td(on) IO 20
RiseTIme tr Vcxo=15V,Ru=15Q 10 20
Turn-Ott Delay Time td(off) '0 E 1 A, VGEN = 10 V, RG = 6 Q 20 35 ns
Fall Time tf 7 15
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/gs 4O 80
a. Pulsetest; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 /"I 1 l 20 I
/// Vss=10thru5V Tcr--55l //
16 16 I
f / 2'5°c
Ci.:.". / 4 v Ci.:] 125°C
E 12 E 12
ID --" (D
:z,cs I /''''''"'''' te.z,co /
E a E 8
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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2-2 S-99548-Rev. A, 20-Dec-99
VISHAY
Si3454ADV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
2r 0.15
C 0.10
O VGS = 4.5 V
' VGS = 10 V
f 0.05
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS = 15 V /''"
E ID = 4.5 A /
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°C
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(0n) — On-Resistance(9) C — Capacitance
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
500 1sicis.s:
400 ---_,
Jssce:u,
6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l/GS-- 10V
ID=4.5A /
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
( ID: 4.5A
\rs,,,,s,,,,,,__,
2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71108
S-99548-Rev. A, 20-Dec-99
www.vishay.com . FaxBack 408-970-5600
Si3454ADV
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "s,
's, ID = 250 “A
§ -0.0
E g 30
g -0 2 'N. a
> 'N g N
s. o. 20
i)" o 4
-0.6 in
"ss, "s.
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E 1
ly, -ly-1 ta
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = “CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
, E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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b4 S-99548-Rev. A, 20-Dec-99
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