SI3446DV ,20-V (D-S) Single FaxBack 408-970-5600S-54952—Rev. A, 06-Oct-972-1Si3446DVVishay Siliconix
SI3446DV
20-V (D-S) Single
VISHAY
Si3446DV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
TSOP-G
Top View
3mm m2 5D]
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
20 0.045@sz= 4.5 v i5.3
0.065 @ VGS = 2.5 v $4.4
(1, 2, 5, 6) D
(3)G OJ
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros :20
Gate-Source Voltage VGS $12
TA = 25''C i 5.3
Continuous Drain Current (TJ = 150oC)a '0
TA = 70°C $42
Pulsed Drain Current 'DM :20
Continuous Source Current (Diode Conduction)" Is 3:1.7
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-tco-Ambienta RthJA 62.5 °C/W
a. Surface Mounted on FR4 Board,t s 5 sec.
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Document Number: 70715
S-54952-Reu A, 06-Oct-97
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Si3446DV
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = I/cs, ID = 250 “A 0.6 V
Gate-Body Leakage less Vos = 0 V, VGS = d: 12 V l 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current 'DSS pA
Vros--20N/,N/Gs=0VTo--70l 5
On-State Drain Currenta low”) VDS = 5 V, Kas = 4.5 V 10 A
VGS = 4.5 V, b = 5.3 A 0.032 0.045
Drain-Source On-State Resistancea rpm") Q
VGS = 2.5 V, ID = 4.4 A 0.045 0.065
Forward Transconductancea gfs Vos = 10 V, b = 5.3 A 20
Diode Forward Voltagea VSD Is = 1.7 A, VGS = 0 V 1.2 V
Dynamicb
Total Gate Charge Q9 10 20
Gate-Source Charge Qgs VDs = 10 V, VGS = 4.5 V, b = 5.3 A 2.5 n0
Gate-Drain Charge di 2.2
Turn-On Delay Time td(on) 30 50
Rise Time tr VDD =10 V, RL =10 Q 50 80
Turn-Off Delay Time td(off) ID 2 1 A, VGEN = 4.5 V, Rs = 6 g 65 100 ns
Fall Time If 35 60
Source-Drain Reverse Recovery Time In IF = 1.7 A, di/dt = 100 Alps 60 90
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70715
S-54952-Rev. A, 06-Oct-97
VISHAY
Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 I l
VGS = 5, 4.5, 4, 3.5, 3 v
ll 2.5V
a? r a?
E 12 w" E
D 2V D
1, 1.5V
0 1 2 3 4
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.08
a J G"
E 0.06 VGS = 2.5 V g
8 0.04 --- VCs = 4.5 v - 8
f? 0.02
0 4 8 12 16 20
ID - Drain Current(A)
5 Gate Charge
I/os = 10 v
ID = 5.3 A
(i? 4 ’ A
> 3 c 8
Q a.) N
U) ttt
6 I" 2 E
E 2 o a
I iii"
0 2 4 6 8 10
Q9 - Total Gate Charge(nC)
Transfer Characteristics
4 Tc=125''C Le" 250C -
0 0.5 1.0 1.5 2.0 2.5 3.0
Ves - Gate-to-Source Voltage (V)
Capacitance
1200 k
Vs,,,, Ciss
l Coss
Ns,,,......,
o 4 B 12 16 20
Vos - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 5.3 A
1.2 /,/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 70715
S-54952-Reu A, 06-Oct-97
www.vishay.com . FaxBack 408-970-5600
Si3446DV
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
g T J = 150°C
0 0.25 0.50 0.75 1.00 1.25 1.50
VSD - Source-to-Drain Voltage(V)
Threshold Voltage
0.2 's,
V I =2
8 Ah0 D 50 PIA
fl, "ss,
E -0.2 tc
8 'ss,
> "ss,
-0.4 "ss,
-50 -25 0 25 50 75 100
TJ - Temperature (°C)
125 150
rDS(on)— On—Resistance( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
ID = 5.3 A
0.06 (
0.04 _
"s----..,
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
2 Single Pulse Power
0.01 0.10 1.00 10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E m 0.1
(D d.)
Single Pulse
104 1o-3
-ly-l _
1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 62.5°C/W
3. Tos, - TA = PDMZthA“)
4. Surface Mounted
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Document Number: 70715
S-54952-Rev. A, 06-Oct-97
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