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SI3443DVTR
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD- 93795B
International
Tart Rectifier Si3443DV
HEXFET© Power MOSFET
0 Ultra Low On-Resistance 1 6
. P-Channel MOSFET DEE ' ' D -
VDSS - -20V
q Surface Mount D 2 H 5
0 Available in Tape & Reel D] (I', E D
q -2.5V Rated 3 4
GD: s RDS(on) = 0.0659
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET8 power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and Roam) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23. TSOP-6
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.4
ID @ TA-- 70°C Continuous Drain Current, l/ss @ -4.5V -3.5 A
IDM Pulsed Drain Current OD -20
Po @TA = 25°C Power Dissipation 2.0 W
Pro @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/''C
EAS Single Pulse Avalanche Energy© 31 mJ
VGS Gate-to-Source Voltage * 12 V
Tu, Tsrs Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient© 62.5 "C/W
1
01/13/03
Si3443DV
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV
- 0.034 0.065 l/cs = -4.5V, ID = -4.4A ©
Rrosom Static Drain-to-Source On-Resistance - 0.053 0.090 Q VCs = -2.7V, lo = -3.7A ©
- 0.060 0.100 VGS = -2.5V, ID = -3.5A ©
VGS(th) Gate Threshold Voltage -0.60 - -1.2 V Vros = VGs, ID = -250pA
9ts Forward Transconductance - 12 - S VDs = -10V, ID = -4.4 A
loss Drain-to-Source Leakage Current T, T, li' pA "tt , 38$ V: , g, T: = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
Qg Total Gate Charge - 11 15 ID = -4.4A
Qgs Gate-to-Source Charge - 2.2 - nC VDS = -10V
di Gate-to-Drain ("Miller") Charge - 2.9 - I/ss = -4.5V Co
tdmn) Turn-On Delay Time - 12 50 VDD = -1OV, l/ss = -4.5V ©
tr Rise Time - 33 60 ns ID = -1.0A
td(off) Turn-Off Delay Time - 70 100 Re = 6.0 Q
tr Fall Time - 72 100 R9 = 10 fl, ©
Ciss Input Capacitance - 1079 - VGS = 0V
Coss Output Capacitance - 220 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 152 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 A showing the
ISM Pulsed Source Current - - -20 integral reverse a
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -1.7A, VGS = 0V ©
trr Reverse Recovery Time - 51 77 ns TJ = 25°C, IF = -1.7A
G, Reverse Recovery Charge - 30 44 nC di/dt = -100Alps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts Ssec.
max. junction temperature.
C) Pulse width S 300ps; duty cycle 3 2%.
Starting T: = 25°C, L = 6.8mH
Rs = 25n, IAS = -3.0A.
