SI3441BDV ,P-Channel 2.5-V (G-S) MOSFETS-03669—Rev. B, 07-Apr-033I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistanc ..
SI3441BDV ,P-Channel 2.5-V (G-S) MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol 5 secs Steady State Uni ..
SI3441BDV ,P-Channel 2.5-V (G-S) MOSFETS-03669—Rev. B, 07-Apr-031Si3441BDVNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI3441BDV-T1 , P-Channel 2.5-V (G-S) MOSFET
SI3442 ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in lead frame for superior thermal and electrical capabilities.notebook computers, por ..
SI3442BDV ,N-Channel 2.5-V (G-S) MOSFETS-40424—Rev. C, 15-Mar-041Si3442BDVVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SKKT57B16E , Thyristor / Diode Modules
SKKT72B16E , Thyristor / Diode Modules
SKKT92B16E , Thyristor / Diode Modules
SKM100GAL12T4 , Fast IGBT4 Modules
SKM100GB063D , Superfast NPT-IGBT Module
SKM100GB125DN , SEMITRANSR M Ultra Fast IGBT Modules
SI3441BDV
P-Channel 2.5-V (G-S) MOSFET
“5% Si3441BDV
New Product Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
tir, (5)
PRODUCT SUMMARY otfJ'd
Vos (V) rDSton) (Q) ID (A) te bos
't tse
0.090 @ VGS = -4.5 v -21) Po
0.130@VGS= -2.5 v -2.45
TSOP-G
Top View
m 1 s TI
(3) G 'T
m m 2 s TI
CE 3 4 TI
_ 2.85 mm _ (1,2,5,6)D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDs -20
Gate-Source Voltage N/ss i8
TA-- 25°C -2.9 -2.45
Continuous Drain Current (T J = 150°C)8 ID
TA = 70°C -2.35 -1.95 A
Pulsed Drain Current IDM - 16
Continuous Diode Current (Diode Conduction)" Is -1.0 -0.72
TA = 25°C 1.25 0.86
Maximum Power Dissipation" PD W
TA = 70°C 0.8 0.55
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 80 100
Ma im md nction-to-Ambienta R
XI u u I I Steady State thJA 120 145 'CA/V
Maximum Junction-to-Foot (Drain) Steady State RM}: 70 85
a. Surface Mounted on 1" x 1" FR4 Board.
For SPICE model information via the Worldwide Web: http:/Mww. vishay.com/www/productlspice.htm,
Document Number: 72028 www.vishay.com
S-03669-Rev. B, 07-Apr-03 1
- i=7'"
Si3441BDV VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(lh) I/tos = VGS, ID = -250 “A -0.45 -0.85 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDs=-20V,VGs=0V -1
Zero Gate Voltage Drain Current loss pA
Vos-- -20V,VGS=0V,TJ=7O°C -5
VDs=-5MVGs=-4.5V -10
On-State Drain Currenta Iron) A
Vos-- -5V,VGS= -2.5V -4
Ves = -4.5 V, ID = -3.3 A 0.070 0.090
Drain-Source On-State Resistancea rDS(on) Q
Vas-- -2.5 V, ID: -2.9A 0.098 0.130
Forward Transconductancea gfs Vos = -10 V, ID = -3.3 A 8.0
Diode Forward Voltagea VSD ls = -1.6 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Q9 5.2 8.0
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 V, ID = -3.3 A 0.8 nC
Gate-Drain Charge di 1.5
Turn-On Delay Time tam) 15 25
Rise Time tr VDD = -10 V. RL = 10 Q 55 85
Turn-Off Delay Time taom ID _ -1.0 A, VGEN = -4.5 M Re = 6 C2 30 45 ns
Fall Time tf 40 60
Source-Drain Reverse Recovery Tlme trr IF = -1.6 A, di/dt = 100 Alus 50 80
a. Pulsetest; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
2"! 1 /'''" 20 1 1 l f
VGS = 4.5 thru 3.5 V / 3 V TC = -55°C /
16 I 16 25"C I f/
ig" 2.5 v Ct jji',jf/ 125°C
st, 12 / E 12 /
f,-', I ‘% 8
2 8 '-
a 2 V o
f V" f
/ 1.5 v
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72028
2 S-03669-Rev. B, 07-Apr-03
VISHAY
Si3441BDV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.30 1000
fit 0.24 A 800
8 Its,
8 0.18 .53 600
5 g Ciss
1 VGS = 2.5 V
0.12 m,...,,----" v - 4 5 v - ' 400
A GS - . o
is',?',- o....---"" A
0.06 200 Ft:::: Cass
0.00 0
0 4 8 12 16 20 O 4 8 12 16 20
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
1 1 l 1
F VDS=1OV 14 Vss=4.5V /
V lro=3.3A A _ - |D=3.3A 'ps'''"
g 4 / g, 1 3 /
2 ID ' "
9 /'" g A ",,P'
o - U 1.2
o / 2 93 I
't 3 8 T, vi''''
u? / , g IA "
g / , E 1.0
8 2 / e
' S.. 0.9 l
v, 8 "
0 '- 0 8 /
> 1 ' -
O 1 2 3 4 5 6 -50 -25 O 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.30
TJ = 150°C
a" 10 iii. 0.24
r: 8 ( ID = 3.3 A
I' S'.
8 ii 0.18
fo' ' 0.12
m "iris'"
JP 0.06
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72028 www.vishay.com
S-03669-Rev. B, 07-Apr-03
- i=7'"
Si3441BDV VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 10
S' 0.2 ko = 250 WA // \
fl, wee''' it ,
g -0 o -..-''"' g N
gi" tl. T = 25"C
i7i" / 4 A
0 -0.2
-0.4 2 " \~
-0.6 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Safe Operating Area
IDM Limited
rosmn) Limited
'ii:] 100 us
g 1 ms
S 10 ms
' 100 ms
E TA = 25''C
0.1 Single Pulse 1 s
dc, 100 s, 10 s
BVDSS Limited
0.1 1 10 100
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
g Duty Cycle = 0.5
g 8 0.2
if',' g Notes:
tr, E 0.1 -T-
u E 0 1 F'DM
o CD . l
(i' e 0.05
g L t2
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 120°CNV
Single Pulse 3. Tou - TA = pDMZmJA(l)
4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72028
4 S-03669-Rev. B, 07-Apr-03
“5% Si3441BDV
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72028 www.vishay.com
S-03669-Rev. B, 07-Apr-03 5
:
www.loq.com
.
