SI3430DV ,N-Channel 100-V (D-S) MOSFET FaxBack 408-970-5600S-01280—Rev. A, 19-Jun-002-1Si3430DVNew ProductVishay Siliconix
SI3430DV
N-Channel 100-V (D-S) MOSFET
VISHAY
Si3430DV
New Product Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2)
0.170@VGS=10V
ID(A) tist','ii'i"s tyiF'
0.185@Vss = 6.0V
TSOP-6
Top View
3mm CE 2 5
_ 2.85 mm
[[133 4D]
(1,2,5,6) D
(3)G o-]
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGs i 20
TA = 25''C 2.4 1.8
Continuous Drain Current (TJ = 175°C)3 ID
TA = 85°C 1.7 1.3 A
Pulsed Drain Current IBM 8
Avalanche Current IAR 6
L = 0.1 mH
Repetitive Avalanche Energy (Duty Cycle slyo) EAR 1.8 mJ
Continuous Source Current (Diode Conduction)a ls 1 7 1.0 A
TA=25°C 2.0 1.14
Maximum Power Dissipation" PD W
TA = 85°C 1.0 0.59
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 45 62.5
Maximum Junction-to-Ambienta RNA
Steady State 90 110 °CNV
Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71235
S-01280-Rev. A, 19-Jun-00
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Si3430DV
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 11A 2 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V i 100 nA
VDs=80V,VGs=0V 1
Zero Gate Voltage Drain Current loss pA
Vros=80V,Vss--0V,Tu=85oC 25
On-State Drain Current3 low") VDS 2 5 V, VGS = 10 V 8 A
. . VGs=10 V,lo=2.4A 0.148 0.170
Drain-Source On-State Resistances rDS(on) Q
VGS=6.O V, ID = 2.3A 0.160 0.185
Forward Transconductancea gfs Vos = 15 V, ID = 2.4 A 7 S
Diode Forward Voltagea VSD ls = 1.7 A, VGS = O V 0.8 1.2
Dynamic"
Total Gate Charge Q9 5.5 6.6
Gate-Source Charge Qgs Vos = 50 V, VGS = 10 V, ID = 2.4 A 1.5 nC
Gate-Drain Charge ' 1.4
Turn-On Delay Time td(on) 9 20
Rise Tlme tr VDD = 50 V, RL = 50 Q 11 20 ns
Turn-Ott Delay Time tims) ko E 1 A, VGEN = 10 V, Re = 6 Q 16 30
Fall Time tf 9 20
Gate Resistance Rg N/ss = 0.1 V, f= 5 MHz 2.8 Q
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Ahus 50 80 ns
a. Pulse test; pulse width s 300 us, duty cycle s: 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 Q c UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS=10thru 6V
,,,er'''''''''' 5 V
g. Ct] /
5 4 8 4
I I Tc = 125°C
0 2 CI 2 l
I -551
0 1 o J I
O 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 3 4 5 6
Vos - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71235
S-01280-Rev. A, 19-Jun-00
VISHAY
Si3430DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rosmn) — On-Resistance ( Q)
VGS — Gate-to-Source Voltage (V)
| s — Source Current (A)
On-Resistance vs. Drain Current
N/ss = 6.0 v m.,,...---''''"''"
m.....----""''"
o 15 _---..
VGS = 10 V
0 2 4 6 8
ID - Drain Current (A)
Gate Charge
VDS = 50V
ID=2.4A /
0 1 2 3 4 5 6
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
400 r Ciss
100 Crss
/ Coss
O 10 20 30 40 5O 60
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2 I I
l/GS-- 10V 1
2.0 - ID = 2.4A
1.2 ww
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
b-- 2.4A
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71235
S-01280-Rev. A, 19-Jun-00
www.vishay.com . FaxBack 408-970-5600
Si3430DV
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 'N 25
0.2 "s, ID = 250 “A
ID -0_0
L, - 'c " 1
j',' 0 2 'ss, g 5 l
g.' n.
V _ .4 i
8 0 10 N
> tik ‘n
's, 5 N,
-0 8 . ~‘Iu
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
3% 0.2
if',' g Notes:
[ii ' T
8 a 0.1 PDM
& (E 1
ly, -ly-1 ta
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 90°CNV
Single Pulse 3. TJM - TA = PDMZWAm
4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
3% 0.2
, E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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b4 S-01280-Rev. A, 19-Jun-00
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