SI3424DV ,N-Channel 30-V (D-S) MOSFETS-02157—Rev. A, 02-Oct-001Si3424DVNew ProductVishay Siliconix ..
SI3430DV ,N-Channel 100-V (D-S) MOSFET FaxBack 408-970-5600S-01280—Rev. A, 19-Jun-002-1Si3430DVNew ProductVishay Siliconix
SI3424DV
N-Channel 30-V (D-S) MOSFET
VISHAY
Si3424DV
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
ott e15
‘3 "ost
PRODUCT SUMMARY ttt , *
VDs (V) rDS(on) (Q) ID (A) po
30 0.028@VGs=10V 6.7
0.038 @ VGS = 4.5 V 5.7
(1, 2, 5, 6) D
TSOP-6
Top View
I LE 1 6 TI
3 mm LE 2 5 TI (3) G o-]
i LE 3 4 TI
_ 2.85 mm _ ( ) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V95 30
Gate-Source Voltage VGS i 20
TA = 25°C 6.7 5.0
Continuous Drain Current (To = 150°c)a ID
TA = 70°C 5.4 4.0
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" Is 1.7 1.0
TA=25°C 2.0 1.14
Maximum Power Dissipation" PD W
TA=7O°C 1.3 0.73
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 62.5
Maxi J tion-to-Ambient" R
ax1mum unc Ion o m Ien Steady State thA 90 110 ''C/1N
Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71317 www.vishay.com
S-02157-Rev. A, 02-Oct-00
Si3424DV
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=7O°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 30 A
I/ss = 10 V, ko = 6.7A 0.023 0.028
Drain-Source On-State Resistancea rDs(on) Q
V63 = 4.5 V, ID = 5.7A 0.032 0.038
Forward Transconductancea 9ts Vos = 10 V, ID = 6.7A 14 S
Diode Forward Voltage" I/sro Is = 1.7 A, Veg = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Qg 11.5 18
Gate-Source Charge Qgs VDs = 15 V, VGS = 10 V, ID = 6.7 A 1.6 nC
Gate-Drain Charge di 3.2
Turn-On Delay Time td(on) 7 15
Rise Time tr VDD = 15 V, RL =15 Q 10 20
Turn-Off Delay Time td(ott) ID _ 1 A, VGEN = 10 V, Rs = 6 Q 20 40 ns
Fall Tlme k 11 20
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 40 80
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
I 1 30 1 r
Vss= 101hru5V Tc=-f"c
s,,,-"''''''"''''"' 4 V 24 2500 \ l!
iii;". Ci] (f/ 125°C
E E 18
E E 12
o 3 V a
2 v Ai)
0 1 2 3 4 0 1 2 3 4 5
Ws - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71317
S-02157-Rev, A, 02-Oct-00
VISHAY
Si3424DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a o,,,,,,,,)
v 0.04 -
0 VGS = 4.5 v -.,.--'''''
.r'si. w....--"''"
8 0.03
5 VGS = 10 v
I 0.02
O 5 IO 15 20 25 30
ID - Drain Current (A)
Gate Charge
VDS = 15 V
ID = 6.7 A
6 o,,/''
s,,/''"
V GS — Gate-to-Source Voltage (V)
4 -/'"
0 3 6 9 12
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Vso - Source-to-Drain Voltage (V)
Capacitance
Ch 600 0
V \ ISS
8 "sdiiU
I N,, Coss
200 F, '_.....
"I---,
O 5 IO 15 20 25 30
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1-6 l 1
VGS = 10 V
A ID = 6.7 A
Ci.t 1.4 /
g [ld ,/
lax: (E 1.2 /
f ",,we''''
0.8 w,-''""
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
g 0.04 l
tD 's,
ih,' 0.03 's,
m. ID = 6.7 A "ss....
8 """---...
I 0.02
f 0.01
O 2 4 6 8 IO
VGS - Gate-to-Source Voltage (V)
Document Number: 71317
S-02157-Rev. A, 02-Oct-00
www.vishay.com
Si3424DV
. . . . VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 ss,
's, 40
ID = 250 HA I
i) -0.0 1
E "ss. it
S' -0 2 , b' \
'l)..] 'Ns,, E 20
Jr -0.4 tc \
'ss, N
0 6 _ 10
N "ss,
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 1o-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
I' 8 0.2
lit ' th1 T
u L 0.1 PDM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 90°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
I' a 0.2
if',' g
tt , 0.1
"j), I? 0.1
Ie Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71317
4 S-02157-Rev, A, 02-Oct-00
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