SI3422DV ,N-Channel 200-V (D-S) MOSFET FaxBack 408-970-5600S-99344—Rev. A, 22-Nov-982-1Si3422DVNew ProductVishay Siliconix
SI3422DV
N-Channel 200-V (D-S) MOSFET
VISHAY
Si3422DV
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
200 5 @ N/ss =10 v ce0.42
TSOP-G
Top View
3mm E132 5D]
i [113 4E1]
_ 2.85 mm
(1,2, 5, e) D
(3)G o-]
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos 200 V
Gate-Source Voltage I/ss 3: 20
TA = 25°C cl: 0.42 cl: 0.31
Continuous Drain Current (TJ = 150°C)3 ID
a-- 70°C i034 i025 A
Pulsed Drain Current (10 us Pulse \Mdth) IBM l 0.75
Avalanche Current lAs i 0.75
L = 0.1 mH
Single Avalanche Energy EAS 0.028 mJ
Continuous Source Current (Diode Conduction)" ls 11 A
TA=25°C 2.1 1.14
Maximum Power Dissipationa PD W
TA = 70°C 1.34 0.73
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maximum Junction-to-Ambient" RthJA
Steady State 90 110 °CIW
Maximum Junction-to-Foot Steady State RthJF 35 42
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71098
S-99344-Rev. A, 22-Nov-98
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Si3422DV VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = l/ss, ID = 250 WA 2 V
Gate-Body Leakage less Vos = 0 V, N/ss = cl: 20 V cl: 100 nA
IDSS VDs=160V,VGs=0V 1
Zero Gate Voltage Drain Current “A
loss VDs = 160 V, VGs = 0 V, TJ = 55°C 25
On-State Drain Currenta IDmn) VDs = 5 V, VGS = 10 V 0.75 A
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 0.35A 5 Q
Forward Transconductancea 9ts VDS = 15 V, ID = 1 A 10 S
Diode Forward Voltagea VSD ls = 1 A, VGS = O V 1.2 V
Dynamicb
Total Gate Charge Q9 2.1 3.4
Gate-Source Charge Qgs VDS = 100 V, VGs = 10 V, ID = 0.5 A 0.5 nC
Gate-Drain Charge di 0.9
Turn-On Delay Time tdwn) 8 13
Rise Time tr VDD = 100 V, RL = 100 Q 8 13
Turn-Off Delay Tlme td(off) ID - 0.75 A, VGEN = 10 V, Rs = 6 Q 9 15 ns
Fall Time if 30 50
Source-Drain Reverse Recovery Time trr IF = 1 A, di/dt = 100 NPs 130 210
a. Pulse test; pulse width 5 300 ps, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 CI c UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.5 I I 1.5
VGS=10thru8V ,ssssei,rise.s''
C,,,,.-----"""""" 125°C
f-j; 1.0 ,stt!j5''' / I? 1.0
's 'r,t,tter'''''" 's
Es p'''''' 6 v E
I 0.5 E I 0.5
O 2 4 6 8 10 0 2 4 6 8 10
V03 - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71098
2-2 S-99344-Rev. A, 22-Nov-98
VISHAY
Si3422DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rosmn) — On-Resistance ( Q)
VGS — Gate-to-Source Voltage (V)
| s — Source Current (A)
On-Resistance vs. Drain Current
N/ss=10N/
w,,,,,,,,,.-'''''
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID - Drain Current (A)
Gate Charge
v03 =100V
ID = 0.5 A
8 _/''
0 1 2 3 4
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ=150°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDS(on) — On-Resistance(9) C — Capacitance
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
Is, Coss
0 20 40 60 80 100
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5 I I
VGS = 10 V
ID = 0.35 A
",--"'
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71098
S-99344-Rev. A, 22-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si3422DV
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.3 "s, 16 (
"s, ID = 250 “A )
g 0.0 g 12 ,
‘E ' N
L, " T = 2 o
j',' "s,, 3 N A 5 C
ef.?.: -0 3 o. 8
-0 6 \
. 4 I.
"ss. "-.
-0.9 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 Io-l 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E 1
E t1 _
ly, -ly-1 t2
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 90°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
, E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71098
b4 S-99344-Rev. A, 22-Nov-98
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