SI2328DS ,N-Channel 100-V (D-S) MOSFETSi2328DSNew ProductVishay SiliconixN-Channel 100-V (D-S) MOSFET V (V) r () I (A)DS DS( ..
SI2328DS ,N-Channel 100-V (D-S) MOSFETS-05372—Rev. A, 25-Dec-01 1Si2328DSNew ProductVishay Siliconix ..
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SI2328DS
N-Channel 100-V (D-S) MOSFET
VISHAY
Si2328DS
New Product
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
100 0.250@VGs=10 v 1.5
TO-235
(SOT-23)
Top View
Si2328DS (D8)"
"Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDs 100
Gate-Source Voltage VGs 21:20
TA-- 25°C 1.5 1.15
Continuous Drain Current (TJ = 150°c)a ID
TA-- 70°C 1.2 0.92
Pulsed Drain Currentb IDM
Avalanche Currentb IAS 6
. L = 0.1 mH
Single Avalanche Energy EAs 1.8 mJ
Continuous Source Current (Diode Conduction)a Is 0.6 A
TA-- 25°C 1.25 0.73
Power Dissipationa PD W
TA-- 70°C 0.80 0.47
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 80 100
M . . - -A . a R
axnmum Junction to mbient Steady State WA 130 170 “CNV
Maximum Junction-to-Foot Steady State Rm}: 45 55
a. Surface Mounted on I" x I" FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71796
S-05372-Rev. A, 25-Dec-01
www.vishay.com
Si2328DS ',cmWAi,;r'
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 100
Gate-Threshold Voltage VGS(th) Vros = Kas, ID = 250 pA 2
Gate-Body Leakage Kass Vros = 0 V, VGS = i20 V d: 100 nA
VDs=80V,VGs=0V 1
Zero Gate Volta e Drain Current IDSS 11A
g VDS=80V,VGS=0V,TJ=70°C 75
On-State Drain Current3 bon) Vos 2 15 V, VGS = 10 V 6 A
Drain-Source On-Resistancea rDS(0n) VGS = 10 V, ID = 1.5 A 0.195 0.250 Q
Forward Transconductancea gfs Vos = 15 V, ID = 1.5 A 4 S
Diode Forward Voltage VSD Is = 1.0 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Q9 3.3 4.0
Gate-Source Charge Qgs VDs = 50 V, Ves = 10 V, ID = 1.5 A 0.47 nC
Gate-Drain Charge di 1.45
Switching
Turn-On Delay Tlme tum) 7 11
Rise Tlme tr VDD-- 50 V, RL = 33 Q 11 17 ns
Turn-Ott Delay Time tum) Irs - 0.2 A, VGEN = 10 V, Rs = 6 Q 9 15
Fall-Time tf IO 15
Source-Drain Reverse Recovery Time trr IF = 1.5 A, dildt = 100 Alps 50 100 ns
a. Pulse test: PW 5300 us duty cycle s2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
12 I Fe 12
VGs=10,9,8V 7V
if: b v f-fr
8 6 r 8 6
I 5 V I TC = 125°C
f 3 f 3
3, 2, 1 v 25°C / o
's 4 v \ "l C
0 2 4 6 8 10 0 2 4 6 8
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71796
2 S-05372-Reu A, 25-Dec-01
VISHAY
Si2328DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
V63 = 10 V
0.3 o,,,,w'''
0.2 ----m----
rDS(on) — On-Resistance( S2)
0 3 6 9 12
ID - Drain Current (A)
Gate Charge
20 l l
Vros = 10 V
E ID =1.5 A /"
8, 16 I
g 12 "
0 1 2 3 4 5 6
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
1 T: =150°c
Is — Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
roam) — On-Resistance (Q) C — Capacitance (pF)
rDS(on) — On-Resistance ( 9)
(Normalized)
Capacitance
Ns?::::::: Cass
0 20 40 60 80 100
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
V63: 10V
ID=1.5A
,,,,w''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
- ID=15A
0 2 4 6 8 10
V65 - Gate-to-Source Voltage (V)
Document Number: 71796
S-05372-Rev. A, 25-Dec-01
www.vishaycom
Si2328DS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 12
0.3 10 (
ID = 250 “A l;
Ct 0.0 s
(U "ss. " TA = 25°C
S' -0 3 , sl', 6
gi" "ss, N
0 _ ttc 4 i
> O 6 'N, ls,
- 'Nc 2 \
0 9 N "s
-1.2 0
-50 -25 0 25 50 75 100 125 150 th01 0.1 1 10 100 600
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tg 0.2
Eg Notes:
(i? 0.1 T
tsts th1 DM
'rrsr-
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 176°CIW
. 3. TJM - TA = PDMZthA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71796
4 S-05372-Reu A, 25-Dec-01
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