SI2320DS ,N-Channel 200-V (D-S) MOSFET FaxBack 408-970-5600S-63640—Rev. A, 01-Nov -982-1Si2320DSNew ProductVishay Siliconix
SI2320DS
N-Channel 200-V (D-S) MOSFET
Si2320DS
New Product Vishay Siliconix
VISHAY
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
200 7@VGs=10 v i028
T0-236
(sons)
Top View
Si2320DS (DO)'
'Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS d: 200
Gate-Source Voltage VGS ck 20
TA-- 25°C i028 i022
Continuous Drain Current (To = 150°C)a ID
TA-- 70°C $022 $0117
Pulsed Drain Currentb IDM i 0.5
Avalanche Currentb 'AS l 0.5
L = 0.1 mH
Single Avalanche Energy EAS 0.013 ml
Continuous Source Current (Diode Conduction)a ls cel A
TA-- 25°C 1.25 0.75
Power Dissipationa PD W
TA-- 70°C 0.80 0.48
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 75 100
Maximum Junc’tion-to-Ambienta Rm J A
Steady State 120 166 °CIW
Maximum Junction-to-Foot Steady State Rtth 40 50
a. Surface Mounted on I" x I" FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71084 www.vishay.com . FaxBack 408-970-5600
S-63640-Rev, A, 01-Nov -98 2-1
Si2320DS VISHAY
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BRmss VGS = 0 V, b = 1 mA 200
Gate-Threshold Voltage VGS(th) VDS = Kss, ID = 250 WA 2
Gate-Body Leakage less Vros = O V, VGS = i 20 V i 100 nA
Vros=t60V,VGs=0V 1
Zero Gate Voltage Drain Current loss 11A
1/Ds=160V,VGs=0V,TJ=700C 75
On-State Drain Current3 loom Vos 2_' 15 V, VGS = 10 V 0.5 A
Drain-Source On-Resistancea rosmn) VGS = 10 V, ID = 0.2 A 5.8 7 Q
Forward Transconductancea gfs l/os = 15 V, ID = 0.4 A 13 S
Diode Forward Voltage VSD IS = 1 A, VGS = 0 V 1.2 V
Dynamicb
Total Gate Charge Q9 1.1 1.6
Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID = 0.2 A 0.31 nC
Gate-Drain Charge di 0.375
Switching
Turn-On Delay Time tdmn) 6 10
Rise Time tr VDD = 100 V, RL = 500 Q 9 15 ns
Turn-Off Delay Time td(ott) lo E 0.2 A, VGEN = 10 v, Rs = 6 Q 9 15
Fall-Time tf 65 100
Source-Drain Reverse Recovery Time trr IF = 1 A, di/dt = 100 Alps 105 160 ns
a. Pulse test: PW s300 us duty cycle 32%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0 1.0 .
VGs = 10, t,,,/,,,,,sis,e'i'i,i,,fi,]
este''-,:",','" I
0.8 r,'',?,'''''''" 8 V - 0.8
i,'-f: tte'''' 7 v f-f:
E 0.6 E 0.6
8 tif'''''"" a
E 0.4 a 0.4
I o6 I
o 6 V o
- 0.2 - 0.2
0 2 4 6 8 IO 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71084
2-2 S-63640-Rev, A, Ol-Nov -98
VISHAY
New Product
Si2320DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rosmn) — On-Resistance ( Q)
VGS — Gate-to-Source Voltage (V)
| s — Source Current (A)
On-Resistance vs. Drain Current
VGS=1OV
0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
Gate Charge
vDS=1oov
ID = 0.2A
0 0.5 1.0 1.5 2.0
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ=150°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
O 20 40 60 80 100
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID=0.2A /
2.0 w''''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID: 0.2A
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71084
S-63640-Rev, A, 01-Nov -98
www.vishay.com . FaxBack 408-970-5600
Si2320DS
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.9 60 '
g ID = 250 WA 40
, 0.3 'v,,,,,,'''''''' E
S ',,,,,,w'''''' t, TA = we
j',' ' 30
te'jir 0.0 u
> w,,,.'''''
-0.3 ',,,,e" 10 N _
-0.6 O
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 Ity-l 1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 166°CNV
3. TJM - TA = PDMZmJAm
4. Surface Mounted
10 100 600
www.vishay.com . FaxBack 408-970-5600
Document Number: 71084
S-63640-Rev, A, 01-Nov -98
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