SI2316DS ,N-Channel 30-V (D-S) MOSFETS-05481—Rev. A, 21-Jan-02 1Si2316DSNew ProductVishay Siliconix ..
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SI2316DS
N-Channel 30-V (D-S) MOSFET
VISHAY
Si2316DS
New Product
N-Channel 30-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q)
0.050 @ Yas-- 10 v
0.085 @ Vss = 4.5 v
FEATURES
0 TrenchFET® Power MOSFET
ID (A) APPLICATIONS
3.4 q Battery Switch
TO-236
(SOT-23)
Top View
Si2316DS (C6)*
"Marking Code
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS cl: 20
TA-- 25°C 3.4 2.9
Continuous Drain Current (To = 150°C)av b ID
TA-- 7000 2.7 2.3
Pulsed Drain Currentb IBM 16
Continuous Source Current (Diode Conduction? b ls 0.8
TA-- 25°C 0.96 0.7
Power Dissipation' b PD W
TA-- 70°C 0.6 0.45
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100 130
Maxi J tion-to-Ambient" R
axnmum unc Ion o m Ien Steady State WA 140 175 "CII/V
Maximum Junction-to-Foot (drain) Steady State RIM: 60 75
a. Surface Mounted on 1" x 1" FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71798
S-05481-Rev. A, 21-Jan-02
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Si2316DS “3%
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 ISA 30
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 0.8
Gate-Body Leakage less VDS = 0 V, VGS = i 20 V i 100 nA
VDS = 24 V, VGS = O V 0.5
Zero Gate Volta e Drain Current I
g DSS Vros=24 V,Vss=0N/,To=55oC 10 ”A
On-State Drain Currenta Vos 2 4.5 V, VGS = 10 V 6
On-State Drain Currenta D(on) VDS 2 4.5 V, VGS = 4.5 V 4
VGS = 10 V, ID = 3.4 A 0.042 0.050
Drain-Source On-Resistancea rDS(on) Q
VGS = 4.5 V, ID = 2.6 A 0.068 0.085
Forward Transconductancea gfs Vos = 4.5 V, ID = 3.4 A 6.0 S
Diode Forward Voltage VSD ls = 0.8 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 4.3 7
Gate-Source Charge Qgs VDS = 15 V, Vss = 10 V, ID = 3.4 A 0.65 nC
Gate-Drain Charge di 1.2
Input Capacitance Ciss 215
Output Capacitance Coss VDs = 15 V, VGs = 0 V, f= 1 MHz 90 pF
Reverse Transfer Capacitance Crss 55
Switching
Turn-On Delay Time tum") 9 15
Rise Time tr VDD =15 V, RL =15 Q 9 15 ns
Turn-Off Delay Time td(0ff) ID _ 1.0 A, VGEN = 10 V, Rs = 6 Q 14 20
Fall-Time tf 6 12
a. Pulse test: PW 2300 us duty cycle s2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C) c UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGs=10thru5V 14 /j/i',,,,(,
ii:". g ol
E E 10 , I
CI D 6
f f 4 WOW
2 25°C I
2t 2f -551
0 2 4 6 8 10 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71798
2 S-05481-Rev. A, 21 -Jan-02
“3% Si2316DS
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.5 350
a 0.4 C" \
ID V 250
g g 's-, Ciss
a 0.3 .‘E
.g T', 200
, 5? 't
L o N, C
53 100 oss
jf' 0.1 VGS = 4.5 V 'ss Crss a.-..-,
VGS = 10 V 50
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 I 2.0 I I
F Vros=15V / VGs=10V
V ID=3.4A y' A lro=3.4A
ca 8 V
'l-,'' g 1 5 ,/
it iris," "s-"''
E 6 '5 2 /
o g tQ /
g 6 2 1.0
g I v w,,,--'''''"
tl 4 / e r,,--'''''"
I ' J?,-
U, y'- f 0.5
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.5
A Cl 0.4
S T J = 150°C E
ls' E 0 3 ID = 3.4A
1. a .
c?) 1 I 0.2
'- 0.1 N
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 O 2 4 6 8 10
Vso - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71798 www.vishay.com
S-05481-Rev. A, 21-Jan-02 3
Si2316DS
I=7''"
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
th4 10
0.2 "s.
"s, ID=250uA
E, " TA = 25''C
g -02 g
f? Cl. 4
tici'" i
f -0 4 ""sss, ls,
_0.6 "ss,
-0.8 O
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
S a 0.2
if',' g Notes:
g F, 0.1 PDM
LY ff I
g -ly-1 te t
a 1. Duty Cycle, D = T1
2, Per Unit Base = RthJA = 166°CIW
. 3. To, - TA = PuMZthoA(t)
Single Pulse 4. Surface Mounted
ltr" 10-3 10-2 1O-1 1 10 100 600
Square Wave Pulse Duration (sec)
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Document Number: 71798
S-05481-Rev. A, 21-Jan-02
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