SI2315DS-T1 ,P-Channel 1.25-W/ 1.8-V (G-S) MOSFETSi2315DSVishay SiliconixP-Channel 1.25-W, 1.8-V (G-S) MOSFETPRODUCT SUMMARYV (V) r () I (A)DS DS(o ..
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SI2315DS-T1
P-Channel 1.25-W/ 1.8-V (G-S) MOSFET
VISHAY
Si2315DS
P-Channel 1.25-w, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.055 © VGS = -4.5 V i3.5
-12 O.075@VGs=-2.5V i3
[email protected] 3:2
TO-236
(SOT-23)
Top 1Aew
Si2315DS (C5)*
*Marking Code
.tttlt, 03‘
'"'isy
Vishay Siliconix
“Ox 9(6‘5
t'iCois
Ordering Information: Si2315DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V08 -12
Gate-Source Voltage Vas l 8
TA = 25°C ck 3.5
Continuous Drain Current (T J = 150oC)a, b ID
TA = 70°C $2.8 A
Pulsed Drain Current bs, cl: 12
Continuous Source Current (Diode Conduction)' b ls -1.6
TA = 25°C 1.25
Maximum Power Dissipation' b PD W
TA = 70°C 0.8
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100
Maximum Junction-to-Ambienta RthJA "CIW
Steady State 130
a. Surface Mounted on FR4 Board.
b. t s5 see.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70850
S-31990-F%v. C, 13-Oct-03
www.vishay.com
Si2315DS
Vishay Siliconix
IE=7'"
VISHAY
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BRmss VGS = O V, ID = -10 WA - 12
Gate-Threshold Voltage VGs(th) VDS = Vas, ID = -250 WA -0.45
Gate-Body Leakage less VDS = 0 V, VGs = d: 8 V i 100 nA
VDs---12V,Vss--0V -1
Zero Gate Voltage Drain Current Irss WA
VDs=-12V,V63=0V,TJ=55°C -10
VDS S -5 V.VGs=-4.5V -6
On-State Drain Currenta low") A
Vros S -5 V,VG3=-2.5V -3
VGS = -4.5 V, ID = -3.5 A 0.045 0.055
Drain-Source On-Resistancea roam) I/cs = -2.5 V, ID = -3 A 0.063 0.075 Q
Veg: -1.8 V, ID: -2A 0.093 0.118
Forward Transconductancea gfs Vos = -5 V, ID = -3.5 A 7
Diode Forward Voltage VSD IS = -1.6A, VGS = 0 V -1.2
Dynamicb
Total Gate Charge Q9 9 15
_ V03: -6V,VGS= -4.5V
Gate Source Charge Qgs lo - -3.5A 1.9 nC
Gate-Drain Charge di 1.5
Input Capacitance Ciss 1225
Output Capacitance Cass Vros = -6 V, VGS = O, f = 1 MHz 260 pF
Reverse Transfer Capacitance Crss 130
Switching'
tam 13.0 20
Turn-On Time
tr VDD=-6 V,RL=6Q 15 25
ID E -1.0A,VGEN=-4.5V ns
1mm Rs = 5 Q 50 70
Turn-Off Time
" 19 35
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW s 300 115 duty cycle s2%.
C. Switching time is essentially independent of operating temperature.
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Document Number: 70850
S-31990
-Rev. C, 13-Oct-03
VISHAY
Si2315DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D - Drain Current (A)
rDs(0n) - On-Hesistance(Q)
Output Characteristics
, I 1 1
/ VGS = 4.5thru 2.5 V
1,015V
1 2 3 4 5 6
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Qg - TotaIGate Charge(nC)
2 4 6 B 10 12
ID - Drain Current (A)
Gate Charge
Vos = 6 V
7 ID = 3.5 A
2 4 6 8 10
ros(on) - On-Resistance(Q)
| D - Drain Current (A)
C - Capacitance(pF)
(Normalized)
Transfer Characteristics
12 _ l
6 , 1251
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
\ Coss
400 "%iiit.
0 a 6 9 12
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 1 1
Vas = 4.5 V
1.4 7 ID = 3.5 A .,,e"''
1.2 /,
~50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 70850
S-31990-F%v. C, 13-Oct-03
www.vishay.com
Si2315DS
Vishay Siliconix
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
'a T J = 150°C o)',-',. 0.3
'sb' 5
g O 0.2
t',, (iii" ( ID = 3.5 A
f 0.1 ,
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l I 12
0.3 'D = 250 “A // 10
7 ow''' I
V 0.2 8
E w'''' s
a 0.1 l a 6
lic," ',,,e'''" Jil l
"i-o," o 0 4
y TA = 25''C
-0.1 2
~--...
-0.2 o
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2 Notes:
_..L: _
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 130°C/W
Normalized Effective Transient
Thermal Impedance
3. To, - TA = PDMZthJA“)
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
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4 S-31990-Reu. C, 13-Oct-03
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