SI2314EDS ,N-Channel 20-V (D-S) MOSFETS-04683—Rev. B, 10-Sep-01 1Si2314EDSNew ProductVishay Siliconix ..
SI2315BDS-T1 , P-Channel 1.8-V (G-S) MOSFET
SI2315DS ,P-Channel 1.25-W, 1.8-V (G-S) MOSFETS-31990—Rev. C, 13-Oct-031Si2315DSVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED)J ..
SI2315DS-T1 ,P-Channel 1.25-W/ 1.8-V (G-S) MOSFETSi2315DSVishay SiliconixP-Channel 1.25-W, 1.8-V (G-S) MOSFETPRODUCT SUMMARYV (V) r () I (A)DS DS(o ..
SI2316DS ,N-Channel 30-V (D-S) MOSFETS-05481—Rev. A, 21-Jan-02 1Si2316DSNew ProductVishay Siliconix ..
SI2318CDS , N-Channel 40 V (D-S) MOSFET
SK12-13 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SK12-13-F , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SK12B , 1.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SK12-B , 1.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SK12-L , 1 Amp Schottky Rectifier 20 to 100 Volts
SK13-13-F , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SI2314EDS
N-Channel 20-V (D-S) MOSFET
VISHAY
Si2314EDS
N-Channel 20-v (D-S) MOSFET
New Product
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) In (A)
0.033 @ l/GS = 4.5 v 4.9
20 0.040 @ I/ss = 2.5 v 4.4
0.051 ©Vss= 1.8 v 3.9
T0-236
(sons)
8-133I
Top View
Si2314EDS (C4)*
*Marking Code
FEATURES
Vishay Siliconix
o TrenchFETo Power MOSFET
o ESD Protected: 3000 V
APPLICATIONS
q Ll-lon Battery Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V93 20 V
Gate-Source Voltage N/ss ck 12
TA-- 25°C 4.9 3.77
Continuous Drain Current (TJ = 150°C)3 ID
TA-- 70°C 3.9 3.0
Pulsed Drain Currentb km 15
Avalanche Currentb 'As 15
. L = 0.1 mH
Single Avalanche Energy EAS 11.25 mJ
Continuous Source Current (Diode Conduction)" IS 1.0 A
TA-- 25°C 1.25 0.75
Power Dissipation" PD W
TA-- 70°C 0.80 0.48
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 75 100
Maximum Junction-to-Ambient" R
Steady State WA 120 166 "CAN
Maximum Junction-to-Foot Steady State RthJF 40 50
a. Surface Mounted on I" x I" FR4 Board.
b. Pulse width limited by maximum junction temperature
DocumentNumber: 71611
S-04683-Rev, B, IO-Sep-OI
www.vishay.com
Si2314EDS “3%
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 111A 20
Gate-Threshold Voltage VGSM VDS = VGS, ID = 250 0A 0.45
Gate-Body Leakage less Vos = 0 V, VGS = 3:45 V i1.5
VDs=16V,Vss=01/ 1 11A
ZeroGateVoltaaeDrai C ent I
r e o g ram urren DSS Vros=16V,Vss=0N/,To=70oC 75
On-State Drain Currents loam) Vos 2 10 V, VGS = 4.5 V 15 A
VGS = 4.5 V, ID = 5.0 A 0.027 0.033
Drain-Source On-Resistancea rDS(on) VGS = 2.5 V, ID = 4.5 A 0.033 0.040 Q
VGS = 1.8 V, ID = 4.0 A 0.042 0.051
Forward Transconductancea gfs Vos = 15 V, ID = 5.0 A 40 S
Diode Forward Voltage VSD ls = 1.0 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge O9 11.0 14.0
Gate-Source Charge Qgs VDs = 10 V, vss = 4.5 V, ID = 5.0 A 1.5 nC
Gate-Drain Charge di 2.1
Switching
Turn-On Delay Time td(on) 0.53 0.8
Rise Time tr VDD = 10 V, RL = 10 a 1.4 2.2 s
Turn-Off Delay Time tam) ID 2 1.0 A, VGEN = 4.5 V, Re = 6 Q 13.5 20 [I
FaII-Tlme tf 5.9 9
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 Alps 13 25 ns
a. Pulse test: PW S300 us duty cycle s2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C) C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage
1200 10,000
/ 1,000
a' A 1
g / If. oo
- 800 'ir."
E E. 10
9 600 9 1 TJ = 150°C
I 400 / I 0.1
- / - 0.01
0 0,0001
0 2 4 6 8 IO 12 0.1 1 10 100
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71611
2 S-04683-Rev. B, IO-Sep-OI
VISHAY
Si2314EDS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 4.5 thru 2.0 V
Is' 1.5 v
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
rDs(on) — On-Resistance ( Q)
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
Vos = 10 V
S ID = 5.0 A
"i'-':-'; e /
w sp'''
g ',,p''"
0 4 8 12 16 20
tag - Total Gate Charge (nC)
| D — Drain Current
C — Capacitance (pF)
rDS(on) — On-Resistance(§2)
(Normalized)
Transfer Characteristics
TC = 125°C
25''C Af,
ss. -55''C
0.0 0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Capacitance
1200 I
300 Coss
"m-.-, Crss
O 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
VGs--4SV ,,,,/''
ID = 5.0 A
1.2 p,,,W''
0.8 1/
-50 -25 0 25 50 75 100 125 150
T: - Junction Temperature CC)
DocumentNumber: 71611
S-04683-Rev. B, IO-Sep-OI
www.vishay.com
Si2314EDS
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.20
ID = 5.0 A
A Cl o 15
s T J = 150°C ii; .
g 5 0.10
U, 0.1 g
:8 0.05 N,
"s.,.,
0.01 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.2 12
0.1 's,,,,,, IO (
A ID = 250 MA \
ty -0.0 8
m " TA = 25°C
E -0.1 'N. b' 6
> 0.2 s,
-0 3 _ 2 N
's, "s,
-0.4 O
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
g Notes:
a, 0.1
Single Pulse
ltr" Itr3 1ty-2 Ity-l
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 166°CIW
3. To, - TA = PDMZthJAm
4. Surface Mounted
10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com
DocumentNumber: 71611
S-04683-Rev. B, IO-Sep-OI
:
www.loq.com
.
