Partno |
Mfg |
Dc |
Qty |
Available | Descript |
SI2311DS-T1-E3 |
VISHAY|Vishay |
N/a |
4400 |
|
P-Channel 1.8-V (G-S) MOSFET |
SI2311DS-T1-E3 |
VIS |
N/a |
33000 |
|
P-Channel 1.8-V (G-S) MOSFET |
SI2311DS-T1-E3 , P-Channel 1.8-V (G-S) MOSFET
SI2312 , 20 V N-Channel Enhancement Mode MOSFET
SI2312 , 20 V N-Channel Enhancement Mode MOSFET
SI2312CDS , N-Channel 20 V (D-S) MOSFET
SI2312DS ,N-Channel 20-V (D-S) MOSFETS-21090—Rev. C, 01-Jun-02 1Si2312DSNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SK110 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere
SK110 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere
SK12-13 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER