SI2309DS ,P-Channel 60-V (D-S) MOSFETS-21339—Rev. B, 05-Aug-022-3I - Source Current (A)SV - Gate-to-Source Voltage (V) r - On-Resista ..
SI2309DS ,P-Channel 60-V (D-S) MOSFETS-21339—Rev. B, 05-Aug-022-1Si2309DSVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
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SI2309DS
P-Channel 60-V (D-S) MOSFET
“3% Si2309DS
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.340 @ VGS = -10 v -1.25
-60 0.550 @ VGS = -4.5 v - 1
T0-236
(SOT-23)
1 El D
s I13?
Top Vew
Si2309DS (A9)*
'Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -60
Gate-Source Voltage VGS 120
TA = 25°C -1.25
Continuous Drain Current (TJ = 150oC)a, b ID
TA = 100°C -0.85
Pulsed Drain Current IDM -8
Avalanche Current L = 0.1 mH IAS -5
TA = 25°C 1.25
Maximum Power Dissipation' b PD W
TA = 70°C 0.8
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100
M ' . - -A . a R
ax1mum Junction to mbient Steady State thJA 130 166 °C/W
Maximum Junction-to-Leaf Steady State RthJL 45 60
a. Surface Mounted on FR4 Board.
b. t s 5 sec.
DocumentNumber: 70835 www.vishay.com
S-21339-Rev. B, 05-Aug-02 2-1
Si2309DS
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, 19 = -250 WA -60 V
Gate Threshold Voltage VGS(th) VDS = Vss, ID = -25O WA -1
Gate-Body Leakage less VDs = 0 V, VGS = $20 V cl: 100 nA
VDs=-48V.V(33=0V -1
Zero Gate Voltage Drain Current DSS VDS = " 8 V, VGS = 0 V, To = 125°C -50 WA
On-State Drain Currenta IBM) Vos 2 -4.5 V, VGS = -10 V -6 A
VGS = MO V, ID = -1.25A 0.275 0.340
Drain-Source On-State Resistancea rDS(on) Q
VGS = -4.5 V, ID = .1 A 0.406 0.550
Forward Transconductancea gfs VDs = -4.5 V, ID = -1 A IS S
Dynamicb
Total Gate Charge (ag 5.4 12
Gate-Source Charge As VDs = -30 V, VGS = -10 V, ID = -1.25 A 1.15 nC
Gate-Drain Charge di 0.92
Turn-On Delay Time td(on) 10.5 20
Rise Time tr VDD = -30 V, RL = 30 Q 11.5 20 ns
Turn-Off Delay Time tam“) In E -1 A, VGEN = -4.5 V, Rs = 6 C2 15.5 30
Fall Tlme tr 7.5 15
Source-Drain Rating Characteristics"
Continuous Current ls -1.25
Pulsed Current ISM -8
Diode Forward Voltage' VSD Is = -1.25 A, VGS = 0 V -0.82 -1.2 V
Source-Drain Reverse Recovery Time trr IF = -1.25 A, dildt = 100 Alps 30 55 ns
a. Pulsetest; pulse width 5 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Vss=10thru6V
1,2V 3V
0 2 4 6 8
Ws - Drain-to-Source Voltage(V)
Transfer Characteristics
TC=-55°C //
25°c\7///
a? 4 l
E 125°C
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
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Document Number: 70835
S-21339-Reu. B, 05-Aug-02
VISHAY
Si2309DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Ef 0.9
VGs=4.5V
0. 0.5 "4,j,,',,,1L,,,y
E' v =10V
il) o......--"" GS
o 2 4 6 8
ID - Drain Current(A)
Gate Charge
1 0 l l "
8- 1.0.8320 /'
6 ,,,/''
VGs — Gate—to—Source Voltage (V)
0 1 2 3 4 5 6
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
t To-- 150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
(Normalized) C — Capacxtance (pF)
rDS(0n) - On-Resistance (g2)
rDS(on) - On-Resistance (Q)
Capacitance
'ss,..,., Ciss
ts Coss
100 'sa':
0 6 12 18 24 30
VDS - Drain-to-Source Voltage(V)
2 0 On-Resistance vs. Junction Temperature
1.8 7 VGs= 10V I
lo: 1.25 A "
1.6 ,,,/'
1.4 ""'
r,,,,,,,,-''''"
-50 -25 0 25 5O 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
\ ID = 1.25 A
0 2 4 6 8 10
V63 - Gate-to-Source Voltage (V)
Document Number: 70835
S-21339-Rev. B, 05-Aug-02
www.vishay.com
Si2309DS
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6 l l 12
w''''' 10
ID = 250 WA
0.4 " I
g 0.2 g l
> , - o
CsCl.'] 0.0 ,3 l TA - 25 C
> w,,,,-'''''
-0.2 "e"'' 2 'N,
-0.4 0
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 100 500
TJ - Temperature CC) Time (sec)
Safe Operating Area, Junction-to-Ambient
A 10 us
tell Limited 100 “s
8 by rDS(on)
D 1 ms
E 10 ms
TA = 25°C
Single Pulse 100 ms
01 1 10
VDs - Drain-to-Source Voltage (V)
dc, 100 s, 10 s,1s
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
Notes:
_..L: _
l, Duty Cycle, D = T
2, Per Unit Base = RthJA = 130°CNV
3. TJM - TA = PDMzthJAm
4. Surface Mounted
10 100 500
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Document Number: 70835
S-21339-Reu. B, 05-Aug-02
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