Partno |
Mfg |
Dc |
Qty |
Available | Descript |
SI2309CDS-T1-GE3 |
VISHAY|Vishay |
N/a |
3000 |
|
P-Channel 60-V (D-S) MOSFET |
SI2309CDS-T1-GE3 , P-Channel 60-V (D-S) MOSFET
SI2309DS ,P-Channel 60-V (D-S) MOSFETS-21339—Rev. B, 05-Aug-022-3I - Source Current (A)SV - Gate-to-Source Voltage (V) r - On-Resista ..
SI2309DS ,P-Channel 60-V (D-S) MOSFETS-21339—Rev. B, 05-Aug-022-1Si2309DSVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI2311DS ,P-Channel 1.8-V (G-S) MOSFETS-05831—Rev. A, 04-Mar-02 1Si2311DSNew ProductVishay Siliconix ..
SI2311DS-T1-E3 , P-Channel 1.8-V (G-S) MOSFET
SK104 , Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information)
SK107 , 1 AMP SCHOTTKY BARRIER RECTIFIERS
SK110 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere