SI2304DS ,N-channel TrenchMOS intermediate level FETSI2304DSN-channel enhancement mode field-effect transistorRev. 01 — 17 August 2001 Product dataM3D08 ..
SI2305ADS-T1-E3 , P-Channel 8-V (D-S) MOSFET
SI2305ADS-T1-E3 , P-Channel 8-V (D-S) MOSFET
SI2305ADS-T1-GE3 , P-Channel 8-V (D-S) MOSFET
SI2305CDS , P-Channel 8 V (D-S) MOSFET
SI2305DS ,P-Channel 1.25-W, 1.8-V (G-S) MOSFETSi2305DSVishay SiliconixP-Channel 1.25-W, 1.8-V (G-S) MOSFET
SI2304DS
N-channel TrenchMOS intermediate level FET
SI2304DSN-channel enhancement mode field-effect transistor
Rev. 01 — 17 August 2001 Product dataM3D088
DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology
Product availability:
SI2304DS in SOT23.
Features TrenchMOS™ technology Very fast switching Subminiature surface mount package.
Applications Battery management High speed switch Low power DC to DC converter.
Pinning information TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1: Pinning - SOT23, simplified outline and symbol gate (g)
SOT23 source (s) drain (d)
MSB003Top view
MBB076
Philips Semiconductors SI2304DS
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to150°C −− 30 V drain current (DC) Tsp =25 °C; VGS =5V −− 1.7 A
Ptot total power dissipation Tsp =25°C −− 0.83 W junction temperature −− 150 °C
RDSon drain-source on-state resistance VGS =10V; ID= 500 mA −− 117 mΩ
VGS= 4.5 V; ID= 500 mA −− 190 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 30 V
VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 30 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tsp =25 °C; VGS =5V; Figure2 and3 − 1.7 A
Tsp= 100 °C; VGS =5V; Figure2 and3 − 1.1 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10μs − 7.5 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 0.83 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C − 0.83 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed;tp≤10μs − 3.3 A
Philips Semiconductors SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors SI2304DS
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure4 100 K/W
Philips Semiconductors SI2304DS
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID =10 μA; VGS =0V =25 °C30 40 − V= −55 °C27 −− V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25°C 1.5 2 − V= 150°C 0.5 −− V= −55°C −− 2.7 V
IDSS drain-source leakage current VDS =30V; VGS =0V =25°C − 0.01 0.5 μA= 150°C −− 10 μA
IGSS gate-source leakage current VGS= ±10 V; VDS =0V − 10 100 nA
RDSon drain-source on-state resistance VGS=10 V; ID= 500 mA; Figure7 and8 =25°C −− 117 mΩ
VGS= 4.5 V; ID= 500 mA =25°C −− 190 mΩ= 150°C −− 300 mΩ
Dynamic characteristicsgfs forward transconductance VDS =10V; ID=1A 1.4 2.5 − S
Qg(tot) total gate charge VDD =15V; VGS =10V; ID= 0.5A; Figure13 − 4.6 nC
Qgs gate-source charge − 0.6 − nC
Qgd gate-drain (Miller) charge − 1.35 1.83 nC
Ciss input capacitance VGS =0V; VDS=10 V; f=1 MHz; Figure11 − 147 195 pF
Coss output capacitance − 65 78 pF
Crss reverse transfer capacitance − 41 56 pF
td(on) turn-on delay time VDD =15V; RL =15 Ω; VGS =10V − 46ns rise time − 7.5 12 ns
td(off) turn-off delay time − 18 35 ns fall time − 13 19 ns
Source-drain diodeVSD source-drain (diode forward) voltageIS= 0.83 A; VGS =0V; Figure12 − 0.7 1.2 V
trr reverse recovery time IS=1 A; dIS/dt= −100 A/μs; VGS =0V;
VDS =25V 69 − ns
Philips Semiconductors SI2304DS
N-channel enhancement mode field-effect transistor
