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SI2303BDSVISHAYN/a15000avaiP-Channel 30-V (D-S) MOSFET


SI2303BDS ,P-Channel 30-V (D-S) MOSFETS-21980—Rev. A, 04-Nov-021Si2303BDSNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
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SI2303BDS
P-Channel 30-V (D-S) MOSFET
VISHAY Si2303BDS
New Product Vishay Siliconix
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (AP
0.200@VGS= -1o v -1.4
-30 0.380 @ VGS = -4% v -1.O
TO-236
(SOT-23)
s 2 a?
Top Mew
Si2303BDS (L3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage Vos -30 V
Gate-Source Voltage Vss $20
TA-- 25°C -1.4 -1.3
Continuous Drain Current (To = 150°C)b ID
TA-- 70°C -1.1 -1.0
Pulsed Drain Currenta loss -10
Continuous Source Current (Diode Conduction)' Is -0.75 -0.6
TA-- 25°C 0.9 0.7
Power Dissipationb Po W
TA-- 70°C 0.57 0.45
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb 120 145
' V V RthJA ''CIW
Maximum Junction-to-Ambientc 140 175
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t s 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
DocumentNumber: 72065 www.vishay.com
S-2198(r-Rev. A, 04-Nov-02 1
Si2303BDS “3%
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = 0 V, ID = -10 wk -30
Gate-Threshold Voltage VGS(th) Vros = Was, ID = -250 “A -1.0 -3.0
Gate-Body Leakage less VDS = 0 V, VGS = i 20 V i 100 nA
VDs=-3OV,VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDs=-30V,VGS=0V,TJ=55°C -10
On-State Drain Currenta 'D(0n) Vos s -5 V, VGS = -10 V -6 A
VGS = -10 V, ID = -1.7 A 0.150 0.200
Drain-Source On-Resistancea rDS(on) Q
VGS = -4.5 V, ID = -1.3 A 0.285 0.380
Forward Transconductancea gfs VDs = -5 V, ID = -1.7 A 2.0
Diode Forward Voltage VSD ls = -0.75 A, VGs = 0 V -0.85 -1.2
Dynamicb
Total Gate Charge Q9 4.3 10
- Vros=-15VVss=-10V
Gate Source Charge Qgs ID E -1.7 A 0.8 no
Gate-Drain Charge di 1.3
Input Capacitance Ciss 180
Output Capacitance Coss Vros = -15 V, VGS = 0, f= 1 MHz 50 pF
Reverse Transfer Capacitance Crss 35
Switching''
td(on) 55 so
Turn-On Time
tr VDD=-15 V,RL=15Q 40 60
ID a -1.0 A, VGEN = -4.5 V ns
td(off) RG = 6 Q 10 20
Turn-Off Time
tf 1O 20
a. Pulse test: PW s300 us duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. . FaxBack 408-970-5600
www.vishay.com Document Number: 72065
2 S-21980-Rev. A, 04-NoV-02
"ii=iir
VISHAY
Si2303BDS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D - Drain Current (A)
i'!' 0.4
ih" 0.2
Output Characteristics
sz =10thru6V
2, 3 v
2 4 6 8 10
v.33 - Drain-to-Source Voltage (V)
On-Resistancevs. Drain Current
VGS = 4.5 V
o,,,-,-'''''' Yas = 10 v
2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vros = 15 v /
ID = 1.7 A o,,//
1 2 3 4 5
% - TotalGate Charge(nC)
rDS(on)- On-Resistance (Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC = -55°c //'
a . f J
25°C "iff
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
200 I, Ciss
50 Nl)::rsct:::
0 5 10 15 20 25 30
Vros - Drain-to-Source Voltage(V)
1 6 On-Resistance vs. Junction Temperature
Veg: 10V
|D=1.7A
1.4 //
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
DocumentNumber: 72065
S-2198(r-Rev. A, 04-Nov-02
www.vishay.com
. I=7'"
Si2303BDS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 1.0
E T - 150°C 8
at) J - !si. 0.6
g a; '0 = .7 A
U8) 6 0.4
f? 0.2 _
0.1 0.0
o 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.9 10
0.6 // 8
7 s,,,,,,,-''''''
a) / 6
g 0 3 ID = 250 " // g l
fl, g \
gs 0.0 E 4
g w,,,,-''" l
TA = 25°C
-0.3 o,,,-'" 2 'k,,
-50 -25 0 25 5O 75 100 125 150 0.01 0.1 1 10 100 1000
T: - Temperature (°C) Time (sec)
Safe Operating Area, Junction-to-Case
10.0 10 us
.0 by rDS(on)
C 1 ms
D 10 ms
100 ms
TA = 25°C
Single Pulse dc, 100 s, 10 s, 1 s
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72065
4 S-21980-Rev. A, 04-NoV-02
"ii=iir
VISHAY
New Product
Si2303BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Duty Cycle = 0.5
Normalized Effective Transient
Themal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
-l-t-1 _
l, Duty Cycle, D = -
2. Per Unit Base = RWA = 62.5IAN
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
10 100 600
DocumentNumber: 72065
S-2198(r-Rev. A, 04-Nov-02
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