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SI2303ADS
P-Channel 30-V (D-S) MOSFET
VISHAY Si2303ADS
New Product Vishay Siliconix
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (AP
0.240 @ VGS = -10 v -1.4
-30 0.460 @ VGS = -45 v -1.0
TO-236
(SOT-23)
s 2 9.3%
Top Mew
Si2303DS (3A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage Vos -30 V
Gate-Source Voltage Vss $20
TA-- 25°C -1.4 -1.3
Continuous Drain Current (To = 150°C)b ID
TA-- 70°C -1.1 -1.0
Pulsed Drain Currenta loss -10
Continuous Source Current (Diode Conduction)' Is -0.75 Ah6
TA-- 25°C 0.9 0.7
Power Dissipationb Po W
TA-- 70°C 0.57 0.45
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb 115 140
' V V RthJA ''CIW
Maximum Junction-to-Ambientc 140 175
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t s 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
Document Number: 71837 www.vishay.com
S-20617-Rev. B, 29-Apr-02 1
Si2303ADS “3%
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = 0 V, ID = -10 wk -30
Gate-Threshold Voltage VGS(th) Vros = Was, ID = -250 “A -1.0 -3.0
Gate-Body Leakage less VDS = O V, VGS = i 20 V i 100 nA
VDs=-30V,VGs=01/ -1
Zero Gate Voltage Drain Current IDSS uA
VDs=-30VVGs=0V,TJ=55c'C -10
On-State Drain Currenta 'D(0n) Vos s -5 V, VGS = -10 V -6 A
VGs=-10V, lr3---1.7A 0.120 0.240
Drain-Source On-Resistancea rDS(on) Q
VGS = -A.5 V, ID = -1.3 A 0.230 0.460
Forward Transconductancea gfs VDs = -5 V, ID = -1.7 A 2.4
Diode Forward Voltage VSD ls = -0.75 A, VGs = 0 V Ah80 -1.2
Dynamicb
Total Gate Charge Q9 4.5 10
- Vros=-15VVss=-10V
Gate Source Charge Qgs ID E -1.7A 0.9 no
Gate-Drain Charge di 0.9
Input Capacitance Ciss 260
Output Capacitance Coss Vros = -15 V, VGS = 0, f= 1 MHz 65 pF
Reverse Transfer Capacitance Crss 35
Switching''
td(on) 6 20
Turn-On Time
tr VDD---15 V,RL=15§2 10 20
ID a -1.0A, VGEN =-4.51/ ns
td(off) RG = 6 Q 15 35
Turn-Off Time
tf 7 20
a. Pulse test: PW s300 us duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. . FaxBack 408-970-5600
www.vishay.com Document Number: 71837
2 S-20617-Rev. B, 29-Apr-02
"ii=iir
VISHAY
Si2303ADS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
10 _ _
/ veg =10thru 6V
'ii.:] //
[s) 6 ’
(f, 4 4 V
Cl , -"''""
CI Y"'"
/ 1, 2 V 3 V
0 2 4 6 8 10
v.33 - Drain-to-Source Voltage (V)
On-Resistancevs. Drain Current
CE V -
t VGS - 4.5 v /
L s,.,,,..-''''
g s..----
ih" 0.2 VGS = 10 V 7
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
10 1 l
Vros = 15 v /
ID = 1.7 A /
fi'. 4 f
0 1 2 3 4 5
% - Total Gate Charge (nC)
rDS(on)— On-Resistance (Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
10 l l
Tc---55l /
8 1 1 (f
25°C //
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
300 't
V.,,,..., Ciss
100 Coss
''"s......
0 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
1 8 On-Resistance vs. Junction Temperature
. 1 1 l
VGS = 10 V
ID = 1.7 A
1.6 s,,,,,,-'''''
1.4 s,,,,,,,,,,,-'''''"
1.2 //
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 71837
S-20617-Rev. B, 29-Apr-02
www.vishay.com
. I=7'"
Si2303ADS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 1.0
A 1 c:
S To = 150°C v
'l-l oi). 0.6
g 0.1 /l;' ( ID = .7 A
08) 6 0.4
i” 0.01 i)5" 0 2 's,
f? . "hm,.
0.001 0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 10
s 0.3 ra,,,,,,,''''''''
X 6 T J = 25°C
Q I = 250 A Si 1 PI
li 0.2 D H g Ing e use
'ic.'.] 0.1 J, 4
o -0.0 N
-0 1 l 2 \
-0 2 / 's.,
-0.3 O
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00 100.00 1000.00
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
g Ch I
8 g pm,
U.l E l
a) a) " _
(il e -ly-1 tit tl
g 1. Duty Cycle, D = T
2 2. Per Unit Base = RthJA = 625'C/W
. 3. TJM - TA = PoMZthoA(t)
Single Pulse 4. Surface Mounted
10-4 Ity-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71837
4 S-20617-Rev. B, 29-Apr-02
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