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Partno	Mfg	Dc	Qty	Available	Descript
SI2302DS	NXP Pb-free	N/a	8217	avai	N-channel TrenchMOS logic level FET

SI2302DS ,N-channel TrenchMOS logic level FETSI2302DSN-channel enhancement mode field-effect transistorRev. 02 — 20 November 2001 Product dataM3D ..
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SI2302DS
N-channel TrenchMOS logic level FET
SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001 Product data
M3D088 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. Applications Battery management High speed switch Low power DC to DC converter. Pinning information TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1: Pinning - SOT23, simplified outline and symbol gate (g)
SOT23 source (s) drain (d)
MSB003Top view
MBB076
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference data
VDS drain-source voltage (DC) Tj =25to150°C − 20 V drain current (DC) Tsp =25 °C; VGS= 4.5V − 2.5 A
Ptot total power dissipation Tsp =25°C − 0.83 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 3.6A 5685mΩ
VGS= 2.5 V; ID= 3.1A 77 115 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 20 V
VGS gate-source voltage (DC) −±8V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure 2 and3 − 2.5 A
Tsp =70 °C; VGS= 4.5V; Figure2 − 2A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 − 10 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 0.83 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C − 0.7 A
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure4 150 K/W
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristics
V(BR)DSS drain-source breakdown voltage ID =10 μA; VGS =0V 20 −− V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 0.65 −− V
IDSS drain-source leakage current VDS =20V; VGS =0V =25°C − 0.01 1.0 μA =55°C −− 10 μA
IGSS gate-source leakage current VGS=±8 V; VDS =0V − 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 3.6A; Figure 7 and8 − 56 85 mΩ
VGS= 2.5 V; ID= 3.1A; Figure 7 and8 − 77 115 mΩ
Dynamic characteristics
gfs forward transconductance VDS =5V; ID= 3.6A − 8 − S
Qg(tot) total gate charge VDD =10V; VGS= 4.5 V; ID= 3.6A; Figure13 − 5.4 10 nC
Qgs gate-source charge − 0.65 − nC
Qgd gate-drain (Miller) charge − 1.6 − nC
Ciss input capacitance VGS =0V; VDS=10 V; f=1 MHz; Figure11 − 230 − pF
Coss output capacitance − 125 − pF
Crss reverse transfer capacitance − 80 − pF
td(on) turn-on delay time VDD =10V; RL= 5.5 Ω; VGS= 4.5 V; RG =6 Ω− 12 20 ns rise time − 23 35 ns
td(off) turn-off delay time − 50 100 ns fall time − 34 50 ns
Source-drain diode
VSD source-drain (diode forward) voltageIS= 1.6 A; VGS =0V; Figure12 − 0.8 1.2 V
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor

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