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SI2302ADS
N-Channel 2.5-V (G-S) MOSFET
“3% Si2302ADS
New Product Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.085@VGS= 4.5 v 2.4
20 0.115@VGS=2.5 v 2.0
TO-236
(SOT-23)
s 2 9.29
Top View
Si2302DS (2A)*
'Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS cl: 8
TA-- 25°C 2.4 2.1
Continuous Drain Current (TJ = 150°C)a ID
TA-- 70°C 1.9 1.7
Pulsed Drain Currenta IBM 10
Continuous Source Current (Diode Conduction)a Is 0.94 0.6
TA-- 25°C 0.9 0.7
Power Dissipationa PD W
TA-- 70°C 0.57 0.46
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t g 5 sec. 115 140
Maximum Junction-to-Ambienta Rth0A "CIW
Steady State 140 175
a. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71831 www.vishay.com
S-20617-Rev. B, 29-Apr-02 1
Si2302ADS “3%
Vishay SiliConix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 WA 20
Gate-Threshold Voltage Vegan) VDS = I/ss, ID = 50 “A 0.65 0.95 1.2
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V l 100 nA
VDS=20V,VGS=0V 1
Zero Gate Voltage Drain Current loss 11A
VDS=20V,VGS=0V,TJ=55°C 10
V0325V,VGS=4.5V 6
On-State Drain Currenta 'D(on) A
1/Dsz5V,Vss=2.5V 4
VGS = 4.5 V, ID = 3.6 A 0.045 0.085
Drain-Source On-Resistancea rDS(on) Q
VGS=2.5V, ID=3.1 A 0.070 0.115
Forward Transconductancea gfs Vos = 5 V, ID = 3.6 A 8 S
Diode Forward Voltage VSD Is = 0.94 A, VGs = 0 V 0.76 1.2
Dynamic
Total Gate Charge Q9 4.0 10
Gate-Source Charge Q95 Vos = 10 V, VGs = 4.5 V, lo = 3.6 A 0.65 nC
Gate-Drain Charge di 1.5
Input Capacitance Ciss 300
Output Capacitance Coss VDs = 10 V, Ves = 0 V, f= 1 MHz 120 pF
Reverse Transfer Capacitance Crss 80
Switching
Turn-On Delay Time td(on) 7 15
Rise Time tr VDD = 10 V, RL = 5.5 Q 55 80 ns
Turn-Off Delay Time tum) '0 - 3.6 A, VGEN = 4.5 V, Rs = 6 Q 16 60
FalI-Tlme tr 10 25
a. Pulse test: PW s300 115 duty cycle s2%..
www.vishay.com Document Number: 71831
2 S-20617-Rev. B, 29-Apr-02
"ii=iir
VISHAY
Si2302ADS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10 l 10
/ VGS = 5 thru 2.5 v y
ii:: _fi:]
9 6 I' 6
t I 2V 3
D 4 D 4
- 2 _ 2 Tc = 125°C
1.5V - I
0, 0.5, 1 v 25°C ff
/ is) -55l
1 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
Ws - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.15 600
A 0.12
g (i) 400
m 0.09 o
"G - C2 l Ns.,. Ci
_ VGS = 2.5 V S', Iss
i'i a....--"' g 300
8 0.06 - _ 8 (t
L VGS - 4.5 V l 200
o5. - o YS-c::::::.
t2 0.03 --,
" 100 "s.-.-.-.
0.00 0 _
0 2 4 6 8 10 0 4 8 12 16 20
ID - Drain Current (A) I/rss - Drain-to-Source Voltage (V)
5 Gate Charge 1 8 On-Resistance vs. Junction Temperature
VDS=10V ,,/ Vss=4.5V
ID=3.6A ID=3.6A
2, 4 A
'l) 3 ow'''''''"
= a) 1.4
> 3 g G" o,,,,,,,,,,-''''''"
o - q;
F2 1’ N
3 tn = 1.2
O (D N
u? tt; E
fi'. 2 I 6 E ",,,,,w''''"
9 I V 1 0
© / g ,,,P"
I 1 ih" /
(D " 0.8
0 1 2 3 4 5 -50 0 50 100 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 71831 www.vishay.com
S-20617-Rev. B, 29-Apr-02
Si2302ADS
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
To = 150°C
| s — Source Current (A)
I’DS(on)- On-Resistance( Q )
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
Threshold Voltage
0.1 's.
-0.0 's, b = 250 PA
-0.1 'ttc
(,.",", 'ss,
-0.3 'N.
-0.4 "S,
Power (W)
VGS(th)Variance (V)
-50 0 50 1 00 150
To - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 3.6A
Is,..,,,,
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
\ Tc = 25°C
Single Pulse
0.10 1.00 10.00 100.00 1000.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 1o-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
10 100 600
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Document Number: 71831
S-20617-Rev. B, 29-Apr-02
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