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SI2301DSVISHAYN/a30000avai20-V (D-S) Single


SI2301DS ,20-V (D-S) SingleS-31990—Rev. E, 13-Oct-031Si2301DSVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED)J ..
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SI2301DS
20-V (D-S) Single
“3% Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDs (V) rioston) (Q) ID (A)
0.130@VGs= -4.5 v -2.3
-20 o.190@sz= -2.5 v -1.9
T0-236
(SOT-23)
1%. D Ordering Information: Si2301DS-T1
Top Mew
Si2301DS (A1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i 8
TA-- 25°C -2.3
Continuous Drain Current (TJ = 150°C)b ID
TA-- 70°C -1.5
Pulsed Drain Currenta 'DM -10
Continuous Source Current (Diode Conduction)b Is -1.6
TA: 25°C 1.25
Power Dissipationb PD W
TA-- 70''C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 'C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb 100
. . . RthJA "C/W
Maximum Junction-to-Ambient? 166
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t s 5 sec.
C. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70627 www.vishay.com
S-31990-ReV. E, 13-Oct-03 1
Si2301DS 'Gai';
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS Ves = 0 V, ID = -250 11A -20
Gate-Threshold Voltage VGS(th) Vros = VGs, ID = -250 11A -0.45
Gate-Body Leakage less VDS = O V, VGS = i 8 V i 100 nA
VDs---20V,VGs--0V -1
Zero Gate Voltage Drain Current bss 11A
Vos-- -20V,Vss--0V,TJ--55c'C -1O
Vos S -5 V,Vss= -4.5V -6
On-State Drain Currenta 'D(0n) A
Vos S -5 V,Vss= -2.5V -3
Vcs---4.5Vlro---2.8A 0.105 0.130
Drain-Source On-Resistancet1 rDS(on) Q
Mas-- -2.5 V. ID: -2.0A 0.145 0.190
Forward Transconductancea gfs VDs = -5 V, ID = -2.8 A 6.5 S
Diode Forward Voltage VSD Is = -1.6 A, VGS = 0 V -O.80 -1.2
Dynamicb
Total Gate Charge ag 5.8 10
_ hs-- -6V,VGs= -4.5V
Gate Source Charge Qgs ID E -2.8A 0.85 no
Gate-Drain Charge di 1.70
Input Capacitance Ciss 415
Output Capacitance COSS VDS = -6 V, VGS = 0, f = 1 MHz 223 pF
Reverse Transfer Capacitance Crss 87
Switching''
two”, 13.0 25
Turn-On Time
tr VDD = -6 V, RL = 6 Q 36.0 60
ID E -1.0A,VGEN= -4.5V ns
tdoti) RG = 6 Q 42 70
Turn-Off Time
tf 34 60
a. Pulse test: PW s 300 ps duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70627
2 S-31990-F%v. E, 13-Oct-03
VISHAY
Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
IO 1 1 l
N/ss = 5, 4.5, 4, 3.5, 3 V
- 2.5 V
g 4 2 v
o 'ly'"
'/: :/0-51V 1.5V
o 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
GS = .
J., 0.2
g V - 4 5 V
ir; GS - .
h- 0.1
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vros = 6 V /
ID = 2.8 A /
i, 1 I
0 2 4 6 8
09 - Total Gate Charge (nC)
rDS(on)- On-Resistance (Q
| D - Drain Current (A)
C - Capacitance(pF)
(Normalized)
Transfer Characteristics
Tc-- -55°C I/
6 25°C //
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
\\Ciss
'tre::::.,.,
's,,,,..,,
0 3 6 9 12
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.8 A
0.8 o.-'''''''"
',,,,,,w'''"
- 50 0 50 1 00 150
Tu - Junction Temperature (°C)
Document Number: 70627
S-31990-ReV. E, 13-Oct-03
www.vishay.com
Si2301DS 'Gai';
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
H w 0.4
E To = 150°C §
8 g 0.3 lo = 2.8 A
.5 r':
. l., 0.2
m sc?.,
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8
Vso - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 14
0.3 12
2, 0.2 ID = 250 WA
i',--,' 0.1 w,.,-"'' ' T = 25°C
> 'w'''" g 6 Single Pulse
:5 o ,
ta'. D.
8 o o / \
-0 1 o,,-''''' "u,
-0.2 o
-50 0 50 100 150 0.01 0.10 1.00 10.00
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10'4 10-3 10-2 10-1 1 IO 30
Square Wave Pulse Duration (sec)
Document Number: 70627
www.vishay.com
S-31990-F%v. E, 13-Oct-03
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