SI2301BDS ,P-Channel 2.5-V (G-S) MOSFETS-22048—Rev. A, 18-Nov-023V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curren ..
SI2301BDS-T1 ,P-Channel 2.5-V (G-S) MOSFETS-31990—Rev. B, 13-Oct-033V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curren ..
SI2301BDS-T1-GE3 , P-Channel 2.5 V (G-S) MOSFET
SI2301CDS , P-Channel 20-V (D-S) MOSFET
SI2301DS ,20-V (D-S) SingleS-31990—Rev. E, 13-Oct-031Si2301DSVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED)J ..
SI2301DS-T1 ,P-Channel 1.25-W/ 2.5-V MOSFETSi2301DSVishay SiliconixP-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYV (V) r () I (A)DS DS(on) D0. ..
SIW3000GIP1-T13 , ULTIMATEBLUE RADIO PROCESSOR
SIW3500DIF1 , ULTIMATEBLUE
SIWC73-6R8 , Electrical Characteristics 25 C 100KHz, 0.1V
SIZ704DT-T1-GE3 , N-Channel 30-V (D-S) MOSFETs
SIZ710DT-T1-GE3 , N-Channel 20 V (D-S) MOSFETs
SIZ900DT-T1-GE3 , Dual N-Channel 30 V (D-S) MOSFETs
SI2301BDS
P-Channel 2.5-V (G-S) MOSFET
“3% Si2301BDS
New Product Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (AP
0.100 @ VGS = -4.5 v -2.4
-20 0.150 @ VGS = 25 v -2.O
TO-236
(SOT-23)
s 2 9.3%
Top Mew
Si2301 BDS (L1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage Vss i8
TA-- 25°C - 2.4 -2.2
Continuous Drain Current (To = 150°C)b ID
TA-- 70°C -1.9 -1.8
Pulsed Drain Currenta loss -10
Continuous Source Current (Diode Conduction)' Is -0.72 -0.6
TA-- 25°C 0.9 0.7
Power Dissipationb Po W
TA-- 70°C 0.57 0.45
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb 120 145
' V V RthJA ''CIW
Maximum Junction-to-Ambientc 140 175
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t s 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
DocumentNumber: 72066 www.vishay.com
S-22048-Rev. A, 18-Nov-02 1
Si2301BDS
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 IIA -20
Gate-Threshold Voltage VGS(th) Vros = Was, ID = -250 “A -0.45 -0.95
Gate-Body Leakage less VDS = 0 V, VGS = i 8 V i 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current IDSS 11A
VDs=-16VVGs=0V,TJ=55c'C -10
Vos S -5 V, VGS = -4.5 V -6
On-State Drain Currenta 'D(on) A
Vos S -5 V, VGS = -2.5 V -3
Was = -4.5 V, ID = -2.8 A 0.080 0.100
Drain-Source On-Resistancea rDS(on) Q
VGS = -2.5 V, ID = -2.0 A 0.110 0.150
Forward Transconductancea gfs VDs = -5 V, ID = -2.8 A 6.5 S
Diode Forward Voltage VSD ls = -0.75 A, VGs = 0 V -0.80 -1.2
Dynamicb
Total Gate Charge A; 4.5 10
- VDS = -6 V, VGS = -4.5 V
Gate Source Charge Qgs ID E -2.8 A 0.7 no
Gate-Drain Charge di 1.1
Input Capacitance Ciss 375
Output Capacitance Coss VDs = -6 V, VGs = 0, f= 1 MHz 95 pF
Reverse Transfer Capacitance Crss 65
Switching''
[mm 20 30
Turn-On Time
tr VDD---6 V,RL=6Q 4O 60
ID a -1.0 A, VGEN = -4.5 V ns
td(off) Rs = 6 Q 30 45
Turn-Off Time
tf 20 30
a. Pulse test: PW s300 us duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
C. Switching time is essentially independent of operating temperature. . FaxBack 408-970-5600
www.vishay.com
DocumentNumber: 72066
S-22048-Reu. A, 18-Nov-02
"ii=iir
VISHAY
Si2301BDS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
l/ VGS = 5thru 2.5 V
if; y 2V f:
0 /(, Q
CI 1.5 V CI
_ 2 I -
0 1 2 3 4 5
v.33 - Drain-to-Source Voltage (V)
On-Resistancevs. Drain Current
.,t5. 0.3 ,
8 0.2 8
A VGS = 2.5 V I
g _...,,..----""" 0
VGS = 4.5 V
0 2 4 6 8 10
ID - Drain Current (A)
5 Gate Charge
Vros = 10 V
ID = 2.8 A
Ll'. I
> 3 c A
g :3 g
<3 k';' g
o 2 c o
"i' I O 3,
(ll,. ' A,
U) 1 o
0 1 2 3 4 5
% - TotalGate Charge(nC)
Transfer Characteristics
Tc = -55°c fl
6 25 C 12530 -
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
400 -..-,
ies, Cass
M--.-,
0 4 8 12 16 20
Vros - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
. 1 1 l
VGS = 4.5 V
ID = 2.8 A
1 4 //
1.2 'w''''''''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
DocumentNumber: 72066
S-22048-Rev. A, 18-Nov-02
www.vishay.com
. I=7'"
Si2301BDS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
S To = 150°C v
- m 0.4
5 Ei ID = 2.8 A
g nail) 0.3
oi:,') 6
cn gr N,,
f? 0.1 \
o 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 IO
0 3 l (
7 0.2 w''''''''
C ID = 250 “A g
E OA of ts
>2 ',,,i''" t N
t, n. 4
g 0.0 l
TA = 25°C
0 "s,,
-0.2 0
-50 -25 0 25 5O 75 100 125 150 0.01 0.1 1 10 100 1000
T J - Temperature CC) Time (sec)
Safe Operating Area
10 10 us
g 100 M5
ts 1 1 ms
CI 10 ms
l TA = 25°C
3 Single Pulse
0.1 100 ms
dc, 100 s, 10 s, 1 s
0.1 1 10 100
Vos - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72066
4 S-22048-Reu. A, 18-Nov-02
“3% Si2301BDS
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
-ly-l _
1. Duty Cycle, D = i,
2, Per Unit Base = RthJA = 62.5°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
DocumentNumber: 72066 www.vishay.com
S-22048-Rev. A, 18-Nov-02 5
:
www.loq.com
.
