SI1904EDH ,N-Channel 25-V (D-S) MOSFET with Copper LeadframeS-03929—Rev. B, 21-May-01 1YYSi1904EDHNew ProductVishay Siliconix ..
SI1905BDH-T1-E3 , Dual P-Channel 1.8-V (G-S) MOSFET
SI1905BDH-T1-E3 , Dual P-Channel 1.8-V (G-S) MOSFET
SI1905DL ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-99188—Rev. A, 01-Nov-992-1YYSi1905DLNew ProductVishay Siliconix
SI1904EDH
N-Channel 25-V (D-S) MOSFET with Copper Leadframe
VISHAY
Si1904EDH
New Product
Vishay Siliconix
Dual N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
0.810 @ VGS = 4.5 v 0.73
1.04 @ VGS = 2.5 v 0.65
SOT-363
SC-70 (6-LEADS)
1 Al. El D1 Marking Code
CB xx it
2 El G2 -- Lot Traceability
- and Date Code
3 Tf 4 S2 Part # Code
|___, El
Top IAew
FEATURES
. TrenchFET© Power MOSFETS: 2.5-V Rated
. ESD Protected: 1800V
. Thermally Enhanced SC-70 Package
APPLICATIONS
. Load Switching
. PA Switch
. Level Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 25
Gate-Source Voltage VGS i8
TA = 25°C 0.73 0.64
Continuous Drain Current (TJ = 150°C)3 ID
TA = 85°C 0.53 0.46 A
Pulsed Drain Current IBM 2
Continuous Diode Current (Diode Conduction)" ls 0.61 0.48
TA = 25°C 0.74 0.57
Maximum Power Dissipation" PD W
TA = 85°C 0.38 0.30
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 130 170
Maximum Junction-to-Ambienta R
Steady State WA 170 220 com,
Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71445 www.vishay.com
S-03929-Rev. B, 21-May-01
Si1904EDH
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) I/rss = VGS, ID = 250 0A 0.6 V
1/Ds=0V,Vcs= i4,5V i1 WA
Gate-Body Leakage 'Gss
Vos=0V,VGs=:t8V 11 mA
VDS=20V,VGS=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=20V.VGS=0V,TJ=85°C 5
On-State Drain Currenta 'D(on) Vros = 5 V, VGS = 4.5 V 2 A
VGS = 4.5 V, ID = 0.64 A 0.630 0.810
Drain-Source On-State Resistance" rDS(on) Q
VGS = 2.5 V, ID = 0.2 A 0.830 1.04
Forward Transconductancea 9ts VDS = 10 V, ID = 0.64 A 1.1 S
Diode Forward Voltagea VSD ls = 0.48 A, VGS = 0 V 0.80 1.2
Dynamicb
Total Gate Charge Qg 0.66 1.0
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 0.64 A 0.14 nC
Gate-Drain Charge di 0.26
Turn-On Delay Time td(on) 42 65
Rise Time tr VDD = 15 V, RL = 30 Q 85 130 ns
Turn-Off Delay Time M(om ID E os A, VGEN = 4.5 V, Rs = 6 Q 200 300
Fall Tlme tf 160 240
a. Pulsetest; pulse width S 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
2.0 10,000
/ 1,000
a? 1.6
g, fi, 100
E 1.2 E, 10
(I,-',. 2 1
o 0.8 0
I / I 0.1
_0 I s 0.01
0.0 0.0001
0 3 6 9 12 0
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
N/ss - Gate-to-Source Voltage (V)
www.vishay.com
Document Number: 71445
S-03929-Reth B, 21-May-01
VlSHAY
Si1904EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
2.0 2.0
l 3 v 1 I
T = -55''C
VGS = 5 thru 3.5 V //' C _
1.5 (, 1.5 _ /)
g.] / 2.5 V g
g , 'l-l 125°C
8 1.0 8 1.0
5 2 V 5
f 0.5 f 0.5
1 V 1.5 v
0.0 ( 0.0
0 1 2 3 4 0 1 2 3 4
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
2.0 80
V C' 60
'lo,' j e
.2 1.2 8
8 / Q. Ciss
a; VGS = 2.5 V iii, 40
o = m N,
I 0.8 VGS 4.5 V O
A I C "ss. Coss
8 0 rss
il" 20 ""--s........_,
" 0.4 's,
0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25
b - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8 l l
A Vros=15 v VGS=4.5V /
ty 4 |D=0.64 A A 1.6 i ID=0.64 A f
g g G" 1.4
3 ID a
J) 5 g 1.2 /
s,'. o g "
S? 2 l I V
(D E" 1.0
J' 1 = 0 8
0.0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 71445 www.vishay.com
S-03929-Rev. B, 21-May-01
Normalized Effective Transient
Si1904EDH
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
ls — Source Current (A)
VGS(th) Variance (V)
Thermal Impedance
Source-Drain Diode Forward Voltage
TJ =150°C
0 0.3 0.6 os 1.2 1.5
V30 - Source-to-Drain Voltage (V)
Threshold Voltage
0.2 I l
ID = 250 ps/k
0.1 "ss,
-0.1 "ss,,
-0.2 "ss,
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
rDS(0n) — On-Resistance (9)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
0.1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = (15
N, 0.02
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 170°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
10 100 600
www.vishay.com
Document Number: 71445
S-03929-Reth B, 21-May-01
“3% Si1904EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71445 www.vishay.com
S-03929-Rev. B, 21-May-01 5
:
www.loq.com
.
