SI1865DL ,Load Switch with Level-Shift S-02987—Rev. B, 29-Jan-01 1Time (S)Si1865DLNew ProductVishay Siliconix Si186 ..
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SI1865DL
Load Switch with Level-Shift
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Si1865DL
Vishay SiliconixNew Product
Load Switch with Level-Shift�������� 215-m� Low rDS(on) TrenchFET� 1.8 to 8-V Input 1.5 to 8-V Logic Level Control Low Profile, Small Footprint SC70-6 Package 2000-V ESD Protection On Input Switch, VON/OFF Adjustable Slew-Rate
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The Si1865DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
the p-channel load-switch. The n-channel MOSFET has
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1865DL operates on supply lines from 1.8
to 8 V, and can drive loads up to 1.2 A.
Switching Variation
R2 @ VIN = ��� V, R1 = �� k� 2468 10
R2 (k�)
ime
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
VOUT
GND
LOAD
VIN
ON/OFF
Si1865DLThe Si1865DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
