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SI1551DL
Complementary 20-V (D-S) MOSFET
VISHAY
Si1551DL
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY $69
VDS (V) rDS(on) (Q) ID (A) Gmge‘s
1.9 @ Vss = 4.5 v 0.30 stelt', bos is
N-Channel 20 3.7 @ VGS = 2.7 v 0.22 q 'iw'' wttb'
4.2 @ VGS = 2.5 v 0.21 tpl
0.995 @ I/cs = -4.5 v -0.44 2..)
P-Channel -20 1.600 @ VGS = -2.7 V 0.34
1.800 © I/cs = -2.5 v -0.32
SOT-363
SC-70 (6-LEADS)
s, 1 Ti? 6 D, Marking Code
T Rolxxi',t
G1 2 5 G2 Lot Traceability
D2 E-dll-Z S2
Top View
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS cl: 12
TA = 25°C 0.30 0.29 - 0.44 -0.41
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C 0.22 0.21 -0.31 -0.30
Pulsed Drain Current IDM 0.6 -1.0
Continuous Source Current (Diode Conduction)a ls 0.25 0.23 -0.25 -0d?3
TA = 25''C 0.30 0.27 0.30 0.27
Maximum Power Dissipation" PD W
TA=85°C 0.16 0.14 0.16 0.14
Operating Junction and Storage Temperature Range To, Tsta -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
M ' V - -A V a R
ax1mum Junction to mblent Steady State WA 400 460 ''C/1/V
Maximum Junction-to-Foot (Drain) Steady State Rtth 300 350
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71255 www.vishay.com
S-21374-Rev. B, 12-Aug-02 1
Si1551DL 'Gai';
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 0.6
Gate Threshold Voltage VSS(th) V V I 250 WA P Ch 0 6 V
DS = Gs, D= - - - V
N-Ch i100
Gate-Body Leakage less Vos = 0 V, Veg = d: 12 V P Ch i100 nA
I/rss = 16 V, VGS = 0 V N-Ch 1
VDS = -16 V, VGS = 0V P-Ch -1
Zero Gate Voltage Drain Current loss o 11A
VDs=16N/,VGs=0V,To--85oC N-Ch 5
VDS = -16 V, VGS = 0 V, To = 85°C P-Ch -5
V08 2 5 V, VGS = 4.5 V N-Ch 0.6
On-State Drain Currenta ID(on) V < 5 V V 4 5 V P Ch 1 0 A
DS _ - , GS = - . - - .
sz=4.5v, |D=0.29A N-Ch 1.55 1.9
VGS = -4.5 V, ID = -0.41 A P-Ch 0.850 0.995
VGS = 2.7 v, ID = 0.1 A N-Ch 2.8 3.7
Drain-Source On-State Resistancea rDS(on) V 2 7 V I 0 25 A P Ch 1 23 1 600 Q
GS = - . , D = - . - . .
VGS = 2.5 V, ID = 0.1 A N-Ch 3.0 4.2
Was = -2.5 V, ID = -0.25 A P-Ch 1.4 1.800
VDS=1OV,|D= 0.29A N-Ch 0.3
Forward Transconductancea ge, V 10 V I 0 41 A P Ch 0 8 s
DS = - , D = - . - .
IS = 0.23 A, VGS = o v N-Ch 0.8 1.2
Diode Forward Voltagea VSD I 0 23 A V 0 V P Ch 0 8 1 2 V
s = - . , GS = - - . - .
Dynamicb
N-Ch 0.72 1.5
Total Gate Charge Qg
N-Channel P-Ch 0.52 1.8
Vros = 10 V, VGs = 4.5 V, ID = 0.29 A N-Ch 0.22
Gate-Source Charge Q95 P Cha I P Ch 0 11 nC
- nne - .
VDS = -10 V, I/ss = -4.5 V, ID = -0.41 A N-Ch 0.13
Gate-Drain Charge di P Ch 0 14
N-Ch 23 40
Turn-On Delay Time Mon) P Ch 7 5 15
N-Channel N-Ch 30 60
Rise Time tr VDD = 10 V, RL = 20 Q
ID a 0.5 A, VGEN = 4.5 V, Rs = 6 Q P-Ch 20 40
. P-Channel N-Ch 10 20
Turn-Off Delay Time thott) VDD = -10 V, RL = 20 Q P-Ch 8 5 17 ns
ID _ -0.5 A, VGEN = -4.5 V, RG = 6 Q .
N-Ch 15 30
Fall Tlme tf P Ch 12 24
Source-Drain t IF = 0.23 A, di/dt = 100 Alps N-Ch 20 40
Reverse Recovery Time rr IF = -o.23 A, di/dt = 100 Ahss P-Ch 25 40
a. Pulsetest; pulse width s 300 ps. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71255
2 S-21374-Reu. B, 12-Aug-02
VISHAY
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Output Characteristics
V = 5 thru 3.5 V
0.5 GS
.cjC:'C. 0.4
D. 0.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
g VGS = 2.5 v J
.‘z" 4 /
ill Vss = 2.7 v
r': 3 j
0 o----"'""
L VGS = 4.5 v
0.0 0.1 0.2 0.3 0.4 0.5 0.6
ID - Drain Current (A)
Gate Charge
I/rss = 10 v
E ID = 0.29 A
0.0 0.2 0.4 0.6 0.8
Qg - TotaIGate Charge(nC)
rosmn) - On-Resistance (Q)
I D - Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
",rc = ",l,,, ////
o/jf/ 125oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V68 - Gate-to-Source Voltage(V)
Capacitance
IC,,, Ciss
)ss Coss
4 8 12 16 20
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
- ID = 0.29A
VG3=4.5V /
-25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
DocumentNumber: 71255
S-21374-Rev. B, 12-Aug-02
www.vishay.com
Si1551DL
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
ssl:, I
0 TJ = 150°C 8
(D tyt 3
, E" 2
T J = 25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.1 "ss 4
"s, ID = 250 ”A
'iii''.
g -0.0 E 3
fit "ss. g
0%) -o 1 s m 2
> "ss,,
-o.2 "s, 1
-0.3 0
-50 -25 O 25 50 75 100 125 150
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 0.29A
1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
IO-l 1 10 100
Time (sec)
IO- 2 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
it' Duty Cycle = 0.5
S E 0.2
if',' g Notes:
tt , 0.1 T
g q, 0.1 Pos,
g 1.2 tl
z 1. Duty Cycle, D = T2
2. Per Unit Base = RthJA =400°CIW
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 Ity? 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71255
S-21374-Reu. B, 12-Aug-02
“3% Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Ii Duty Cycle = 0.5
S '', 0.2
"f',' E
't,'iit 0.1
8 o 0.1 .05
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS ttttV c UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
1.0 _ _ 1.0 _ _
f( VGS = 5thru 3 V TC = .5500 /
0.8 f 2.5 v 0.8 25'C
E 0.6 // of: 0.6 y
6' ?l 125°C
0.2 I 0.2
1 V 1 5 V
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
3.0 I 100
f?.. 2.5 80 (
'li' / 'ii' 's..,,..,..., Ciss
E' 2.0 8
ii VCs = 2.5 v ' ,t'sj. 60
o 1.5 l/ss = 2.7 v i g
g =elu----" I 40
V V = 4.5 V 0
:8 1.0 GS It Coss
0.5 Ns., \¥
Crss .--,
0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 71255
www.vishay.com
S-21374-Rev. B, 12-Aug-02
Si1551DL 'Gai';
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Gate Charge On-Resistance vs. Junction Temperature
5 1 1 1.6 1 1
' VDS=10V VGS=4.5V
V ID = 0.41 A / A ID = 0.41 A
* 4 9*, 1.4 l
g / g "
> g G'
a) 25 tD
[2, 3 / 8 (-i", 1.2
g / 8 stir
g. A , V
8 2 _ A 1.0
(l) C1
>0 1 / L 0 8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) To - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
F, g 2.0 ID = 0.41 A
'g Er'
Q TJ = 150°C g
g 0,: 1.5
S 6 N,
I e 1 0 'ss.,,,,.
- J) ''"'s-.,.,.
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 5 ,
0.3 /''" 4
ID = 250 0A
',fe'] 0.2 w'''''
g ',,,,,w'''' g 3 l
E 0.1 I ' \
g? s,,,,,.'''" £3 2 k
ill" l
> 0.0 l
-0.1 's
-0.2 O
-50 -25 0 25 50 75 100 125 150 IO- 3 1ty2 IO-l 1 10 100 600
T J - Temperature (°C) Time (sec)
www.vishay.com Document Number: 71255
6 S-21374-Reu. B, 12-Aug-02
“3% Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
h' 'i. 0.2
"g E Notes:
- 0.1 T
T7 -_ PDM
M fE l
5 -lt-I t2
a 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 400°CIW
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
212 0.2
if',' g
E ' 0.1
B lg 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71255
www.vishay.com
S-21374-Rev. B, 12-Aug-02
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