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SI1426DHVISHAYN/a6000avaiN-Channel 30-V (D-S) MOSFET


SI1426DH ,N-Channel 30-V (D-S) MOSFETS-05803—Rev. A, 18-Feb-02 1YYSi1426DHNew ProductVishay Siliconix        ..
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SI1426DH
N-Channel 30-V (D-S) MOSFET
"ii=iir
VISHAY
Si1426DH
N-Channel 30-V (D-S) MOSFET
New Product
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
0.075 @ VGS = 10 v 3.6
0.115@Vss= 4.5 v 2.9
SOT-363
SC-70 (6-LEADS)
F} [.0
Top Mew
FEATURES
Vishay Siliconix
. TrenchFET© Power MOSFET
o Thermally Enhanced SC-70 Package
. PWM Optimized
APPLICATIONS
o Boost Converter in Portable Devices
- Low Gate Charge (3 nC)
. Low Current Synchronous Rectifier
Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS i 20
TA = 25°C 3.6 2.8
Continuous Drain Current (TJ = 150°C)3 ID
TA = 85°C 2.6 2.1
Pulsed Drain Current IBM 10
Continuous Diode Current (Diode Conduction)" ls 1.3 0.8
TA = 25°C 1.6 1.0
Maximum Power Dissipation" PD W
TA = 85°C 0.8 0.5
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 60 80
Maximum Junction-to-Ambienta R
Steady State WA 100 125 com,
Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71805 www.vishay.com
S-05803-Rev. A, 18-Feb-02
. I=7'"
Si1426DH VISHAY
Vishay Siliconix New Product
SPECIFICATIONS iTa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 “A 0.80 2.5 V
Gate-Body Leakage less I/os = 0 V, VGS = i 20 V l 100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDs=24V,VGs=O\/.TJ=85°C 5
On-State Drain Currenta Imon) Ws = 5 V, VGS = 10 V 10 A
VGS = 10 V, ID = 3.6A 0.061 0.075
Drain-Source On-State Resistance" rDS(on) Q
VGS=4.5V, ID=2.0A 0.092 0.115
Forward Transconductancea 9ts VDs = 10 V, ID = 3.6 A 5 S
Diode Forward Voltagea VSD ls = 1.3 A, VGS = 0 V 0.78 1.2
Dynamicb
Total Gate Charge Q9 1.9 3
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 3.6 A 0.75 nC
Gate-Drain Charge di 0.75
Turn-On Delay Time td(on) 10 15
RiseTime tr VDD=15VRL=15§2 12 18
Turn-Off Delay Time 1mm '0 E 1 A, VGEN = 10 V, Re = 6 Q 15 22 ns
Fall Time tf 9 15
Source-Drain Reverse Recovery trr IF = 1.4 A. di/dt = 100/ys 40 70
a. Pulsetest; pulse width 5 300 MS. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
10 I I 1 I 10
Vss=10thru5V 4V (l,
8 8 A/
"if,' 6 / / LE: 6
S 4 s 4
o f 3 V o
o a TC = 25°C
_ 2 - 2 I
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71805
2 S-05803-Rev, A, 18-Feb-02
"ii=iir
VISHAY
Si1426DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.16 250
fit A 200 I _ Ciss
8 0.12 Its,
I",-'; VGS = 4.5 v g
g o,,,,,,.-.-'''' li'. 150
0.: tO
8 0.08 ir
I VGS = 10 V I 100 ss,. Coss
ij?,- Crss "R''-----.....,
f 0.04
0.00 0
0 2 4 6 8 10 O 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ _ , 1.8 I _
F VDS=15V Vss=101/
E lro=3.6A I a Ili- |D=3.6A /
.8 8 F; "
53 "ii" 1.4
o o tD
'f, / t 8 1.2 1
sl?. / I Fj2. ,,,,p''"
I .8, 1.0
8 / 53
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.20
A iii. 0.16
E” 8 ID = 1 A
E g ID = 3.5 A
's E 0.12
o T J = 150°C g '
8 1 a;
w I 0.08
m o.'?'.,
JP 0.04
0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71805 www.vishay.com
S-05803-Rev. A, 18-Feb-02
Si1426DH
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4 30 M
0.2 "s. 25
ty -0.0 20
g "ss. f 1
g -0 2 , b' 15
fi, "ss,, a k
o -0 4 Nc 10
-0.6 , 5 _
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' a 0.2
lit g 0.1 T
u L 0.1 PDM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA =100°CIW
Si I P I 3. TJM -a = PDMZthAm
mg e u se 4. Surface Mounted
Ity-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
Il a 0.2
if',' g
E ' 0.1
l? E 0.1
Single Pulse
104 1M Io-? IO-I 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71805
S-05803-Rev, A, 18-Feb-02
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