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SI1417EDH
P-Channel 12-V (D-S) MOSFET
VISHAY
Si1417EDH
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY . TrenchFET© Power MOSFETS: 1.8-V Rated
V V r Q I A o ESD Protected: 3000 V
DS( ) Dstom( J D ( J . Thermally Enhanced SC-70 Package
0.085@Vss= -4.5 V -3.3 APPLICATIONS
-12 0.115@Vss= -2.5 V -2.9 . Load Switching
0.160 @ Mas = -1.8 v Al.4 . PA Switch
. Level Switch
SOT-363 D
SC-70 (6-LEADS)
EJ LEI Marking Code 3 k9
'- BB xxi's G
D 2 H 5 D v-
I: F} El Lot Traceability
and Date Code
G '3 El S Pan#Code
Top Ihew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGS i 12
TA = 25°C -3.3 -2.7
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C -2.4 -1.9
Pulsed Drain Current IBM -8
Continuous Diode Current (Diode Conduction)" ls -1.4 Ah9
TA=25°C 1.56 1.0
Maximum Power Dissipation" PD W
TA = 85°C 0.81 0.52
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 60 80
' . - - . a
Maximum Junction to Ambient Steady State RthJA 100 125 "'CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 34 45
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71412 www.vishay.com
S-03187-Rev. A, 05-Mar-01
Si1417EDH
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS IT., = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = -250 11A -0.45 V
VDS=0VYVGS= 21:4.5V i1.5 WA
Gate-Body Leakage less
N/Ds=0VVGs=ce12V 21:10 mA
VDS = -9.6 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss WA
VDs=-9.6 V,VGS=0V, TJ= 85°C -5
On-State Drain Current3 |D(0n) VDS = -5 V, I/ss = -4.5 V -4 A
VGS = -4.5 V, ID = -3.3 A 0.070 0.085
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = Al.9 A 0.095 0.115 Q
VGs=-1.8V, ID=-1.0 A 0.133 0.160
Forward Transconductancea 9ts VDS = -10 V, ID = -3.3 A 8 S
Diode Forward Voltage3 Vsro ls = -1.4 A, VGs = 0 V -0.80 -1 .1
Dynamicb
Total Gate Charge Q9 5.8 8
Gate-Source Charge Qgs VDS = -6 V, VGS = -45 V, ID = -32 A 1.3 nC
Gate-Drain Charge di 1.5
Turn-On Delay Time [mm 0.60 1.0
Rise Time tr VDD = -6 V, RL = 6 g 1.4 2.1 us
Turn-Off Delay Time td(ott) ID - -1 A, VGEN = -4.5 V, Rs = 6 Q 4.9 7.5
Fall Tlme tf 4.9 7.5
a. Pulsetest; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
8 10,000
E 6 <:
ici' 2" 100
.g 4 so, 10
_o 2 (D
",--''' 0.1
0 / 0.01
0 3 6 9 12 15 18 0 3 6 9 12
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71412
S-03187-Rev, A, 05-Mar-01
VISHAY
Si1417EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8 I I 8 f
I/ss-- 5thru 2.5V Tc---55''C
2 V _ y
f 25 C 'sd
g 'l-l 125°C
8 4 8 4
(f, 1.5 v j-],
o 2 D 2
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
A 1000
2; C' Ciss
g (i) 800
a; m 600
75 o 400
il" "ss.. Coss
0.0 1.5 3.0 4.5 6.0 7.5 0 2 4 6 8 1O 12
b - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 I 1.6 l l
A VDS=6 V VGS=4.5V
ti 4- ko---3.3 A a 147 ID---3.3 A /
oils.' " 2r "
f;,' s,,/''' 8 r,,,,,-''"
so, G"
b' 3 .g g 1.2 ,/
g /'" ID a w,,,-''''
cn “F E
I C L,
g _ O fl
S? 2 I V 1.0
I ij) /
8 1 f 0.8 /
0.0 1.5 3.0 4.5 6.0 7.5 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
DocumentNumber: 71412 www.vishay.com
S-03187-Rev. A, 05-Mar-01
Si1417EDH
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A 0.20
<3 T J = 150°C iir
g E 0.15 ID = -32 A
= o Ic
o 0.10
a) I 's.
I E? 'ss..,
J] 0.05
0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 I l 35
I = 250 ps/k
0.3 D 28 y
g 0.2 oi'''
ID " 21
a 0.1 I a
Ci." s,,,,.'''" 8 14 k
if 0 0 's
> . N.
-0.1 - 's,
',w'''" 'ss.
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = (15
2% 0.2
2' E Notes:
lt g -T-
B lr, PW
g ,5 l
g -l21 t2
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D t2
2. Per Unit Base = RthJA = 100°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
100 600
www.vishay.com
Document Number: 71412
S-03187-Rev, A, 05-Mar-01
“3% Si1417EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71412 www.vishay.com
S-03187-Rev. A, 05-Mar-01 5
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