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SI1413EDH
P-Channel 20-V (D-S) MOSFET with Copper Leadframe
VISHAY
Si1413EDH
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY . TrenchFET© Power MOSFETS: 1.8-V Rated
V V r Q I A o ESD Protected: 3000 V
DS( ) Dstom( J D ( J . Thermally Enhanced SC-70 Package
0.115@VGs= -45 V -2.9 APPLICATIONS
-20 0.155 @ VGS = -2.5 V -2.4 . Load Switching
0.220 @ Mas = -1.8 v Al.0 . PA Switch
. Level Switch
SOT-363 D
SC-70 (6-LEADS)
EJ LEI Marking Code 3 k9
'- BA xxi's y- G
D 2 H 5 D v-
I: F} El Lot Traceability
and Date Code
G '3 El S Pan#Code
Top Ihew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i 12
TA = 25°C -2.9 -2.3
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C -2.0 -1.6
Pulsed Drain Current IBM -8
Continuous Diode Current (Diode Conduction)" ls -1.4 Ah9
TA=25°C 1.56 1.0
Maximum Power Dissipation" PD W
TA = 85°C 0.81 0.52
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 60 80
' . - - . a
Maximum Junction to Ambient Steady State RthJA 100 125 "'CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 34 45
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71396 www.vishay.com
S-03186-Rev. A, 05-Mar-01
Si1413EDH
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS IT., = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = -100 11A -0.45 V
VDS=0VYVGS= i4.5V i1.5 WA
Gate-Body Leakage less
N/Ds=0VVGs=ce12V 21:10 mA
Vrs=-16VVss=0V -1
Zero Gate Voltage Drain Current loss WA
N/Ds=-16V,VGs=0V,TJ=85''C -5
On-State Drain Current3 |D(0n) VDS = -5 V, I/ss = -4.5 V -4 A
Vss=-4.5V, ID=-2.9A 0.095 0.115
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = Al.4 A 0.125 0.155 Q
VGs=-1.8V, ID=-1.0 A 0.180 0.220
Forward Transconductancea 9ts VDS = -10 V, ID = -2.9 A 6 S
Diode Forward Voltage3 Vsro ls = -1.4 A, VGs = 0 V -0.80 -1 .1
Dynamicb
Total Gate Charge Q9 5.6 8
Gate-Source Charge Qgs Vos = -10 V, VGS = -45 V, ID = -2.9 A 1.2 nC
Gate-Drain Charge di 1.2
Turn-On Delay Time [mm 0.75 1.1
Rise Time tr VDD = -10 V, RL = 10 g 1.6 2.3 us
Turn-Off Delay Time imam ID - -1 A, VGEN = -4.5 V, Rs = 6 Q 3.9 5.5
Fall Tlme tf 3.9 5.5
a. Pulsetest; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
8 10,000
E 6 <:
ici' 2" 100
.3 4 so, 10
[i', g 1
_ 2 _0
",-''' 0.1
0 / 0.01
0 3 6 9 12 15 18 0 3 6 9 12
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71396
S-03186-Rev, A, 05-Mar-01
VISHAY
Si1413EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8 1 1 8 1 1 (
VGS = 5 thru 2.5 v Tc = -55'C
6 I 6 25"C
A 2 v A "ss /
S.. s.
E f if / 125°C
ts 4 / it 4 sl
Cl 1.5 V Cl
o 2 D 2
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.5 1000
a 0.4 800 li
8 L15; Ciss
.3 0.3 7 VGS =1.8 V / g 600
0I 0.2 ' V = 2 5 V 8 400
A w..---''" GCC.',,',..';',-----' I
il" VGS = 4.5 V (,
L 0.1 200 Coss
'ss........,
0.0 0 rss
0.0 1.5 3.0 4.5 6.0 7.5 0 4 8 12 16 20
b - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 f 1.6 l l
A VDS=10 V VGS=4.5V
ty 4- ko---2S A A 147 ID---2S A o,,,,,''''''
8, I C8 . s,,,,,,-''''''"
iii 3 / Ie-',. "iii" 1 2 o,,,,,-''''
g " ii a ',,,W''
T / g: g
s,'. r 0 fl
S? 2 I V 1.0
O "ii"
I a w,,,,,,-''''''
o 1 = 0.8 l
0.0 1.5 3.0 4.5 6.0 7.5 -50 -25 O 25 50 75 100 125 150
O9 - Total Gate Charge (nC)
TJ - Junction Temperature CC)
Document Number: 71396
S-03186-Rev. A, 05-Mar-01
www.vishay.com
Si1413EDH
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
<3 T J = 150°C iir
g E . ID = - s A
a :1 (
8 C) 0.2
U) I l
w E "ss,,..
_ J] 0.1
0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 I l 35
I = 250 ”A
0.3 D /’ 28 y
g 0.2 o,,,p''''
ID l 21
-§ o,,,,,,,,-''''''
m 0.1 a
'l'., ',,i'''" t N
S. a 14 K
if 0 0 's
> . N.
-0.1 's,
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = (15
EE 0.2
2' E Notes:
lt E I
B lr, PW
g ,5 l
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D t2
2, Per Unit Base = RthJA = 100°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
100 600
www.vishay.com
Document Number: 71396
S-03186-Rev, A, 05-Mar-01
“3% Si1413EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71396 www.vishay.com
S-03186-Rev. A, 05-Mar-01 5
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