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SI1410EDH
N-Channel 20-V (D-S) MOSFET with Copper Leadframe
VISHAY
Si1410EDH
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY . TrenchFET© Power MOSFETS: 1.8-V Rated
V V r Q I A o ESD Protected: 2000 V
DS( ) Dstom( J D( J . Thermally Enhanced SC-70 Package
0.070@VGs= 4.5 V 3.7 APPLICATIONS
20 . = . . . .
0 080 @ Vss 2 5 V 3 4 . Load Switching
0.100 @ Kas = 1.8 v 3.0 . PA Switch
. Level Switch
SOT-363
SC-70 (6-LEADS)
D l 1 6 D
Marking Code
D It) {7.} l. 5 D 1 k9
Lot Traceability
G 4 S and Date Code
Part # Code
Top Jew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS i 12
TA = 25°C 3.7 2.9
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C 2.6 2.0
Pulsed Drain Current IBM 8
Continuous Diode Current (Diode Conduction)" ls 1.4 0.9
TA=25°C 1.56 1.0
Maximum Power Dissipation" PD W
TA = 85°C 0.81 0.52
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 60 80
' . - - . a
Maximum Junction to Ambient Steady State RthJA 100 125 "'CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 34 45
a. Surface Mounted on 1" x l" FR4 Board.
DocumentNumber: 71409 www.vishay.com
S-03185-Rev. A, 05-Mar-01
Si1410EDH VISHAY
Vishay Siliconix New Product
SPECIFICATIONS IT., = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 pA 0.45 V
VDS=0VYVGS= 21:4.5V i1 WA
Gate-Body Leakage less
N/Ds=0VVGs=ce12V 21:10 mA
VDS=16V,VGS=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=16V,VGS=0V.TJ=85°C 5
On-State Drain Current3 |D(0n) VDS = 5 V, I/ss = 4.5 V 4 A
VGS = 4.5 V, ID = 3.7 A 0.055 0.070
Drain-Source On-State Resistancea rDS(on) VGs = 2.5 V, ID = 3.4 A 0.065 0.080 Q
VGs=1.8V,ID=1.7 A 0.080 0.100
Forward Transconductancea 9ts VDS = 10 V, ID = 3.7 A 10 S
Diode Forward Voltage3 Vsro ls = 1.4 A, VGS = 0 V 0.75 1.1
Dynamicb
Total Gate Charge Q9 5.6 8
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 3.7 A 0.75 nC
Gate-Drain Charge di 1.10
Turn-On Delay Time [mm 0.15 0.25
Rise Time tr VDD = 10 V, RL = 10 g 0.4 0.6 us
Turn-Off Delay Time td(ott) ID - 1 A, VGEN = 4.5 V, Rs = 6 Q 1.9 2.8
Fall Time tf 1.2 1.8
a. Pulsetest; pulse width 5 300 113. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage
10 10,000
a:" 8 1,000
ici' i? 100
“t; 6 tf-]
fi. Y, 10
a” 4 ,
2 // 0 1
0 0.01
0 3 6 9 12 15 18 0 3 6 9 12
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71409
2 S-03185-Rev, A, 05-Mar-01
VISHAY
Si1410EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGs=5thru2V
g.] 1.5V
0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.0 1.5 3.0 4.5 6.0 7.5
b - Drain Current(A)
Gate Charge
A VDS = 10 V
ty 4 ID = 3.7 A /
0.0 1.5 3.0 4.5 6.0 7.5
Qg - Total Gate Charge (nC)
rosmn) — On-Resistance (g)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
6 ''csj)j/j/
Tc = -55''C
0 sed:
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VGS - Gate-to-Source Voltage (V)
Capacitance
600 "r, Ciss
0 Crss
0 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 l l
VGS = 4.5 V
1.6 i ID = 3.7 A w,,,,,,-'''''''
1 4 //
1.2 ',,P" ow'''''''''
0.8 //
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 71409
S-03185-Rev. A, 05-Mar-01
www.vishay.com
Si1410EDH
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
ls — Source Current (A)
VGS(th) Variance (V)
Normalized Effective Transient
Thermal Impedance
Source-Drain Diode Forward Voltage
TJ =150°C
0 0.3 0.6 0.9 1.2 1.5
V30 - Source-to-Drain Voltage (V)
Threshold Voltage
"s, ID = 250 ps/k
-0.3 \\
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
rDS(0n) — On-Resistance (9)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
0.15 ID = 3.7 A
0.10 (
O 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
'ttttts
0.001 0.01 0.1 1 10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 100°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
10 100 600
www.vishay.com
Document Number: 71409
S-03185-Rev, A, 05-Mar-01
“3% Si1410EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71409 www.vishay.com
S-03185-Rev. A, 05-Mar-01 5
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