SI1407DL ,P-Channel 1.8-V (G-S) MOSFETSi1407DLNew ProductVishay SiliconixP-Channel 1.8-V (G-S) MOSFET
SI1407DL
P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1407DL
New Product Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.130@Vss= -A.5 v -1.8
-12 0.170@sz= -2.5 v -1.5
0.225 @ Vss = -1.8 v -1.3
SOT-363
SC-70 (6-LEADS)
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Top View
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Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vros -12
Gate-Source Voltage VGs d: 8
TA=25°C -1.8 -1.6
Continuous Drain Current (T J = 150°C)3 lo
a-- 85°C -1.4 -1.2
Pulsed Drain Current IDM -5
Continuous Diode Current (Diode Conduction)a ls -0.8 -0.8
TA = 25°C 0.625 0.568
Maximum Power Dissipationa PD W
TA = 85°C 0.400 0.295
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 165 200
Maximum Junction-to-Ambient" RthJA
Steady State 180 220 "C/W
Maximum Junction-to-Foot (Drain) Steady State Rm}: 105 130
a. Surface Mounted on 1" x 1" FR4 Board.
DocumentNumber: 71074
S-01561-Rev. C, 17-Jul-00
www.vishay.com . FaxBack 408-970-5600
Si1407DL
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 11A -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 8 V cl: 100 nA
VDS = -9.6 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss “A
VDS = -9.6 V, VGs = 0 V, TJ = 85°C -5
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -A.5 V -2 A
VGs---4.5V, lox-IBA 0.105 0.130
Drain-Source On-State Resistancea roman) VGS = -2.5 V, ID = -1.5 A 0.140 0.170 Q
VGs=-1.8V, lro=-0.8A 0.185 0.225
Forward Transconductancea Ws VDs = -10 V, ID = -1.8 A 4.3
Diode Forward Voltage" VSD ls = -0.8 A, VGS = 0 V -0.77 -1.1 V
Dynamicb
Total Gate Charge Q9 5.5 7.0
Gate-Source Charge Qgs VDs = -6 V, VGS = -4.5 V, ID = -1.8 A 0.95 nC
Gate-Drain Charge di 1.10
Turn-On Delay Time tdwn) 8 12
Rise Time tr VDD = -6 V, RL = 10 Q 33 50
Turn-Off Delay Time tam) '0 - -1 A, VGEN = -A.5 V, Rs = 6 Q 32 50 ns
Fall Time k 29 45
Source-Drain Reverse Recovery Time trr IF = -0.8 A, di/dt = 100 Alps 20 40
a. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
/ VGS = 5 thru 2 V y
4 / 3.2 (/
Ci" ig
E 3 E 2.4
E 2 E 1.6
o I Cy
I 1.5 V I
f f Tc = 125
1 0.8 I
1 V -551
O 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71074
S-01561-Rev. C, 17-Jul-00
VISHAY
Si1407DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9’, 0.4
ii' 0.3 VGS = 1.8 V
o ",,,,,,,,i'
I 0.2 w,....---"'''''
' -- VGS = 2.5 V
VGS = 4.5 V
0 1 2 3 4 5
ID - Drain Current (A)
Gate Charge
VDS = 6 V
E ID = 1.8 A
8, 4 "
f,' /'''"
E’ 3 /
"a' 2 /
0 1 2 3 4 5 6
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
\ Ciss
2 4 6 8 IO 12
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGIS = 4.5lv
ID = 1.8 A ,/
",,,pp''''
w,,,,,-'''''''
w,,,-'''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID=1.8A
ID = 0.8A
1 2 3 4 5
l/ss - Gate-to-Source Voltage (V)
DocumentNumber: 71074
S-01561-Rev. C, 17-Jul-00
www.vishay.com . FaxBack 408-970-5600
Si1407DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
th4 10
ID = 250 “A
s5if, 0.2 ',,w''''''''
g w,,,,,,,-''''' g 6 N
m 0.1 l m
g? w,,,.''''" g N
0.0 'ss,
-50 -25 0 25 50 75 100 125 150 Ity-e IO-l 1 IO 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
3 a 0.1 ''r
(-i,' (E 0.05
ly, -ly-1 t2 1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 180°CNV
Sin le Pulse 3. TJM - TA = PDMZ‘NAm
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
, E 0.1
le Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71074
b4 S-01561-Rev. C, 17-Jul-00
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