SI1405DL ,P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-01560—Rev. B, 17-Jul-002-1YYSi1405DLNew ProductVishay Siliconix
SI1405DL
P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1405DL
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
0.125@Vss= -A.5 v $1.8
-8 0.160@sz= -2.5 v $1.6
0.210@sz= -1.8 v i1.4
SOT-363
SC-70 (6-LEADS)
Top View
or, s'ts
stf,)Fos',
'tll “3’66
Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -8
Gate-Source Voltage VGS i 8
TA=25°C $1.8 $1.6
Continuous Drain Current (To = 150°C)a ID
TA=85°C $1.5 112 A
Pulsed Drain Current IDM d: 5
Continuous Diode Current (Diode Conduction)a ls -0.8 -0.8
TA = 25°C 0.625 0.568
Maximum Power Dissipationa PD W
TA = 85°C 0.400 0.295
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 165 200
Maximum Junction-to-Ambient" RthJA
Steady State 180 220 "C/W
Maximum Junction-to-Foot (Drain) Steady State Rm}: 105 130
a. Surface Mounted on 1" x 1" FR4 Board.
DocumentNumber: 71073
S-01560-Rev. B, 17-Jul-00
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Si1405DL
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 [1A -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 8 V cl: 100 nA
VDS = -64 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss “A
VDS = -64 V, VGS = 0 V, TJ = 85°C -5
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -A.5 V -2 A
VGs---4.5V, lox-IBA 0.100 0.125
Drain-Source On-State Resistancea roman) VGS = -2.5 V, ID = -1.6 A 0.130 0.160 Q
VGs=-1.8V, lro=-0.8A 0.170 0.210
Forward Transconductancea Ws VDs = -10 V, ID = -1.8 A 3.8
Diode Forward Voltage" VSD ls = -0.8 A, VGS = 0 V -0.76 -1.1 V
Dynamicb
Total Gate Charge Q9 5.5 7.0
Gate-Source Charge Qgs VDs = -4 V, VGS = -4.5 V, ID = -1.8 A 0.9 nC
Gate-Drain Charge di 0.9
Turn-On Delay Time tdwn) 8 12
Rise Time tr VDD = -4 V, RL = 10 Q 36 55
Turn-Off Delay Tlme tam) '0 - -1 A, VGEN = -A.5 V, Rs = 6 Q 33 50 ns
Fall Time k 30 45
Source-Drain Reverse Recovery Time trr IF = -0.8 A, di/dt = 100 Alps 20 40
a. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
5 /'''"
// Vss=5thru2V
O , 1.5V
0.51/ 's 1V
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
4.0 I I
'c=l,r,,c',1Q
3 25°C /!
iii] 125°C
- 0.8 l
0 0.6 1.2 1.8 2.4
V68 - Gate-to-Source Voltage (V)
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DocumentNumber: 71073
S-01560-Rev. B, 17-Jul-00
VISHAY Si1405DL
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.5 1000
91 0.4 A 800 N. ss
8 ,y.1.S Ns.
f1i. 8
ii' 0.3 VGS = 1.8 V ,r's=zs. 600
8 8 N,
E" 0.2 Was = 2.5 v LI) 400
3 ---" Coss
0.1 200 _
VGS - 4.5 V Crss
0 1 2 3 4 5 0 2 4 6 8
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
l l l l
1/Ds=4V Vss--4.5V
ID=1.8A A ID=1.8A
/''" 1.2
3 / r,,,,,,-'"
/'" 1.0
'w'''''
rDS(0n) — On-Resistance (9
(Normalized)
VGS — Gate-to-Source Voltage (V)
0 1 2 3 4 5 6 -50 -25 O 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
T: = 150°C A
A Cl 0.4
E 8 ID = 1.8 A
g E 0.3
E 5 ID = 0.8 A
o) I 0.2
.9 0.1 "e-r----
0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) l/ss - Gate-to-Source Voltage (V)
Document Number: 71073 www.vishay.com . FaxBack 408-970-5600
S-01560-Rev. B, 17-Jul-00
Si1405DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
th4 10
ID = 250 “A
g 0.2 wr'''
'll / g e t
m 0.1 l tr,
'r, w,,,.''''" t N
g., cy. 4
> ' 'ss,
-50 -25 0 25 50 75 100 125 150 Ity-e IO-l 1 IO 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
3 a 0.1 ''r
(-i,' (E 0.05
ly, -ly-1 t2 1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 180°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
g E 0.1
le Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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b4 S-01560-Rev. B, 17-Jul-00
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