SI1305DL ,P-Channel 1.8-V (G-S) MOSFETS-03721—Rev. C, 07-Apr-032-1YYSi1305DLVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
SI1305DL-T1 , P-Channel 1.8-V (G-S) MOSFET
SI1305DL-T1 , P-Channel 1.8-V (G-S) MOSFET
SI1305EDL , P-Channel 1.8-V (G-S) MOSFET
SI1307DL ,P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-63637—Rev. A, 01-Nov-992-1YYSi1307DLNew ProductVishay Siliconix
SI1305DL
P-Channel 1.8-V (G-S) MOSFET
ic,fiF,Ai, Si1305DL
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
i,eis,t1ti'
PRODUCT SUMMARY
VDs(V) rosm (Q) Ito (A) .tttlt, 069‘“ 09.366
0.280 @ VGS = -4.5 v -0.92 s, 1?l
-8 0.380 @ VGS = -2.5 v -0.79 l
0.530 @ l/ss = -1.8 v -0.67
SOT-323
SC-70 (3-LEADS)
Marking Code
Lot Traceability
and Date Code
Part tt Code
Top Vew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -8
Gate-Source Voltage VGS i8
TA=25°C -0.92 -0.86
Continuous Drain Current (To = 150°C)3 ID
TA: 70°C -0.74 -0.69 A
Pulsed Drain Current IBM -3
Continuous Diode Current (Diode Conduction)a ls -0.28 -0.24
TA = 25°C 0.34 0.29
Maximum Power Dissipation" PD W
TA = 70°C 0.22 0.19
Operating Junction and Storage Temperature Range T J, Tstg ~55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 315 375
Maximum Junction-to-Ambienta RthUA
Steady State 360 430 “CM
Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71076 www.vishay.com
S-03721-Rev. C, 07-Apr-03 2-1
Si1305DL
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(lh) I/tos = VGS, ID = -250 “A -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDS=-6.4V,VGS=OV -1
Zero Gate Voltage Drain Current loss “A
Vos-- -6.4V,VGS=OV,TJ=70°C -5
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -3 A
VGS = -4.5 V, ID = -1 A 0.230 0.280
Drain-Source On-State Resistancea rrosean) VGs = -2.5 V, ID = -0.5A 0215 0280 Q
VGS = -1.8 V, ID = -0.3A 0.440 0.530
Forward Transconductancea gfs VDS = -5 V, ID = -l A 3.5
Diode Forward Voltagea VSD ls = -0.3 A, VGS = 0 V -1.2 V
Dynamicb
Total Gate Charge % 2.6 4
Gate-Source Charge Qgs VDS = -4 V, VGS = -4.5 V, ID = -l A 0.6 nC
Gate-Drain Charge di 0.5
Turn-On Delay Time tam) 8 15
Rise Time tr VDD = -4 V. RL = 4 Q 55 80
Turn-Off Delay Time tam“, ID _ -1 A, VGEN = -4.5 V, Re = 6 C2 17 25 ns
Fall Time tr 12 20
Source-Drain Reverse Recovery Tlme trr IF = -1 A, di/dt = 100 Alps 27 45
a. Pulsetest; pulse width 5 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
I/ss = 4.5 V -. l I l / (
4V v,,t'',',',,Ct, Tex: -55''f / /
tg'''''''"'', 3.5V 5 .0
6 tit.' -'''''" 25 c \I/ /
A tft'5 I 3 v A /
s ',i',e>'C. s 4 l
o a: (/' 125°C
a wit,,"--' 2.51/ 'g A
o 4 o 3
E 'pw'''", E /
2 V'''"''''' I'
Cf s:,:,:,'') 2 v D. 2
Cl 2 Cl
/e''' 1.5 v 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71076
S-03721-Rev. C, 07-Apr-03
\HSHAY
Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Cl V 1 8 V
V GS = . -
o V - 2.5 V
g 1.0 GS
, 0.6 /
Jd 0.4 - VGS = 4.5 v g
o.,.--'"""'
0 1 2 3 4 5 6 7
ID - Drain Current (A)
Gate Charge
VDS = 4 V
ID = 1 A o,,?''
4 ",,,,,w'''
VGS - Gate-to-Source Voltage (V)
O 1 2 3 4
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
To = 150°C
Is - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
300 'N.
150 )ssssss::.:
100 Crss "m--
0 2 4 6 8
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 4.5 V
ID = 1 A
w-'''"
1.2 we-'''''''"
w,,--''''''"
w,,,,,--''''''''
0.8 ,.,,--''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
(h6 ID-- IA
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
Document Number: 71076
S-03721-Rev. C, 07-Apr-03
www.vishay.com
Si1305DL f,,sWAir'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 20
0.3 16 (
a 0.2 ',,,V'''''' 12 (
g ',,,,,,,p'''''''' E l
E 0.1 " 5 - o
> it l TA - 25 C
gi" w,,.''''" E 8 N
i?," i
-0.1 'w'''''' 4 h
-0.2 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
Il 8 0
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 360°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
Il a 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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2-4 S-03721-Rev. C, 07-Apr-03
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