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SI1304DLVISHAYN/a6000avaiN-Channel 25-V (D-S) MOSFET


SI1304DL ,N-Channel 25-V (D-S) MOSFET S-03474—Rev. B, 09-Apr-01 1YYSi1304DLNew ProductVishay Siliconix      ..
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SI1304DL
N-Channel 25-V (D-S) MOSFET
VISHAY
Si1304DL
New Product
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.350 @ sz = 4.5 v 0.75
0.450 @ VCs = 2.5 v 0.66
SOT-323
SC-70 (3-LEADS)
Gll'i,
Top View
Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDs 25
Gate-Source Voltage VGS i 8
TA = 25°C 0.75 0.70
Continuous Drain Current (TJ = 150°C)3 ID
TA = 70°C 0.60 0.56 A
Pulsed Drain Current IDM 3.0
Continuous Diode Current (Diode Conduction)" Is 0.28 0.24
TA = 25°C 0.33 0.29
Maximum Power Dissipation" PD W
TA: 70°C 0.21 0.19
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 315 375
Maximum Junction-to-Ambienta R
Steady State WA 380 450 com
Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71315 www.vishay.com
S-03474-Rev. B, 09-Apr-01
Si1304DL
lii7'"
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = I/ss, ID = 250 WA 0.6 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current loss “A
VDS=20V,VGS=0V,TJ=70°C 5
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 3.0 A
VGS = 4.5 V, ID = 0.75 A 0.280 0.350
Drain-Source On-State Resistance" rDS(on) Q
VGS = 2.5 V, ID = 0.50A 0.355 0.450
Forward Transconductancea gfs VDS = 15 V, ID = 0.75 A 1.5
Diode Forward Voltagea VSD ls = 0.24 A, VGs = 0 V 0.8 1.2 V
Dynamich
Total Gate Charge O9 1.85 2.8
Gate-Source Charge Qgs VDs = 15 V, VGS = 4.5 V, ID = 0.75 A 0.15 nC
Gate-Drain Charge di 0.82
Turn-On Delay Time td(on) 11 20
Rise Time tr VDD = 15 V, RL = 20 Q 18 30
Turn-Off Delay Time tdmm ID E 0.75 A, VGEN = 4.5 V, Rs = 6 Q 17 30 ns
Fall Tlme tr 11 20
Source-Drain Reverse Recovery Time trr IF = 0.24 A, di/dt = 100 Alps 30 60
a. Pulsetest; pulse width S 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
3.0 1 l 3.0 l 1 f,
1 l TC = -551
VGS = 5 thru 2.5 V _ I
2.5 , 2.5 25:10 \7/
g.'. 2.0 'ii:] 2.0 //
E E 125°C
o 1.5 2 V o 1 5
(f 1.0 D: 1.0
0.5 1.5 V 0.5 I
0.0 0.0
2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71315
S-03474-Rev. B, 09-Apr-01
VlSHAY
SH304DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
I’Dsmn) - On-Resistance ( £2)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current (A)
Gate Charge
VDS=15V
ko-- 0.75A
V GS — Gate-to-Source Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
Capacitance
5 10 15 20 25
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
- lro=0.75A /
VGS = 4.5 V
o,,p'''''
-25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
( ID = 0.75 A
ks.,.,
Its, 150
g 100 -
eci 1.6
lh' 8 1.4
8 <23 1.2
:8: 1.0
(il. 0.6
a; 0.4
"iris'"
if 0.2
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71315
S-03474-Rev. B, 09-Apr-01
www.vishay.com
. lii7'"
Si1304DL VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.2 20
0.1 \ (
"s, 16
ID = 250 “A l
ty -0.0 (
g -0 1 g \ TA = 25°C
gi" tl. 8
i7i" 'ss. l
> 0 2 _ h
0 3 "s,, 4
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
g E 0.2
if',' E
lit ' th1 J,,,-,
T7 L th1 DM
Iz'jz' l
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 360°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
if',' g
tt , 0.1
E: 0.1
Single Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71315
4 S-03474-Rev. B, 09-Apr-01
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