SI1304DL-T1 ,N-Channel 25-V (D-S) MOSFET S-41774—Rev. C, 04-Oct-04 3I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ..
SI1305DL ,P-Channel 1.8-V (G-S) MOSFETS-03721—Rev. C, 07-Apr-032-1YYSi1305DLVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
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SI1305DL-T1 , P-Channel 1.8-V (G-S) MOSFET
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SI1304DL-T1
N-Channel 25-V (D-S) MOSFET
“5% Si1304DL
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
“Q Its
PRODUCT SUMMARY ,gt'iiGss
Vos (V) rDS(on) (Q) Ito (A) Qg (Typ) 't 9069‘
0.350 @ VGS = 4.5 V 0.75
25 1.3
0.450 @ VGS = 2.5 v 0.66
SOT-323
SC-7O (3-LEADS)
Marking Code
Lot Traceability
and Date Code
Part # Code
Top bfery
Ordering Information: Si1304DL-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage l/DS 25
Gate-Source Voltage N/ss i 8
TA = 25°C 0.75 0.70
Continuous Drain Current (T J = 150“C)a ID
TA = 70°C 0.60 0.56 A
Pulsed Drain Current 'DM 3.0
Continuous Diode Current (Diode Conduction)a Is 0.28 0.24
TA = 25°C 0.33 0.29
Maximum Power Dissipation" PD W
TA=70°C 0.21 0.19
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 315 375
Maximum Junction-to-Ambien’ta RNA
Steady State 380 450 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rms: 285 340
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71315 www.vishay.com
S-41774-Rev. C, 04-Oct-04 1
Si1304DL
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGs, ID = 250 WA 0.6 1.3 V
Gate-Body Leakage less Vos = O V, VGS = is V i 100 nA
' VDs--25V,VGs--0V 1
Zero Gate Voltage Drain Current loss VDs = 25 V, VGS = 0 V, TJ = 700 C 5 “A
On-State Drain Currenta 'D(on) VDs = 5 V, VGS = 4.5 V 3.0 A
VGS = 4.5 V, ID = 0.75 A 0.280 0.350
. - - . a
Drain Source On State Resistance rDs(on) Vas = 2.5 V, ID = 0.50A 0.355 0.450 Q
Forward Transconductancea gfs VDS = 15 V, ID = 0.75 A 1.5 S
Diode Forward Voltage' VSD Is = 0.24 A, vss = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 1.3 2.0
Gate-Source Charge Qgs Vos = 15 M Vas = 4.5 V, I0 = 0.75 A 0.31 "
Gate-Drain Charge di 0.5
Turn-On Delay Time td(0n) 11 20
Rise Time tr VDD = 15 V, BL = 20 Q 18 30
Turn-Off Delay Time tu(oft) ID - 075 A, VGEN = 4.5 V, R9 = 6 Q 17 30 ns
Fall Time tt 11 20
Source-Drain Reverse Recovery Time trr IF = 0.24 A, di/dt = 100 Alps 30 60
a. Pulse test; pulse width s 300 ps, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
3.0 1 I
VGS = 5thru 2.5 V
Transfer Characteristics
=.::::,»://
Ct.] (aL:]
6' 1 5 2V 6' 1 5
I 1.0 I 1.0
0.5 1.5 v 0.5 I
0.0 0.0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com DocumentNumber: 71315
S-41774-Rev. C, 04-Oct-04
VISHAY
SH304DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
'Dsmn) — On-Resistance ( g2)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current(A)
Gate Charge
VDS = 15 V /"
ID = 0.75 A /
4 o,,,/''"
_,,/'"
VGS — Gate-to-Source Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
6' To = 150°C
- 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
— On-Resiistance
rDS(on)
rDS(0n) — On-Resistance (9)
(Normalized)
Capacitance
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
vss = 4.5 V
ID = 0.75 A /
o,,p'''''
-25 O 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 0.75 A
ks.,.,
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71315
S-41774-Rev. C, 04-Oct-04
www.vishay.com
Si1304DL “5%
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Normalized Effective Transient
VGS(th) Variance (V)
Thermal Impedance
Thermal Impedance
0.2 20
Threshold Voltage Single Pulse Power, Junction-to-Ambient
"s, 16
ID = 250 MA
-0.1 g \ TA = 25°C
-0 2 "ss, h
O 3 "ss, 4
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 IO-l 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 PDM
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 360°C/W
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
Wsha y Siliconix maintains woddwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as packagedape drawings, part marking, and reliability data, see
http://www Vishay. com/ppg?71315.
www.vishay.com Document Number: 71315
S-41774-Rev. C, 04-Oct-04
www.ic-phoenix.com
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