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SI1302DL
N-Channel 30-V (D-S) MOSFET
VISHAY
Si1302DL
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (C2) ID (A)
0.480 @ l/ss = 10 v 0.64
0.700 @ sz = 4.5 v 0.53
SOT-323
SC-70 (3-LEADS)
I TT. El D
Top View
Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs I Steady State Unit
Drain-Source Voltage I/us 30
Gate-Source Voltage V68 :20
TA = 25°C 0.64 0.60
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C 0.51 0.48 A
Pulsed Drain Current 'DM 1.5
Continuous Diode Current (Diode Conduction)" Is 0.26 0.23
TA = 25''C 0.31 0.28
Maximum Power Dissipationa PD W
a-- 70°C 0.20 0.18
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5sec 355 400
M V V - -A F a R
axnmum Junction to mbient Steady State WA 380 450 'CII/V
Maximum Junction-to-Foot (Drain) Steady State Rtth 285 340
a. Surface Mounted on 1"x1"FR4 Board.
Document Number: 71249 www.vishay.com
S-02367-Rev. C, 23-Oct-00
Si1302DL
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGs, ID = 250 pA 1 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V cl: 100 nA
VDS=24V,VGS=0V 1
Zero Gate Volta e Drain Current I
g DSS Vos = 24 v. VGS = o v, TJ = 70°C 5 “A
On-State Drain Currenta 'D(on) VDS = 5 V, VGS = 10 V 1.5 A
VGS = 10 V, ID = 0.6 A 0.410 0.480
Drain-Source On-State Resistance" rDs(on) Q
VGS = 4.5 V, ID = 0.2 A 0.600 0.700
Forward Transconductancea gis I/os = 15 V, ID = 0.6 A 0.75
Diode Forward Voltage" VSD Is = 0.23 A, VGS = 0 V 0.8 1.2 V
Dynamic"
Total Gate Charge O9 0.86 1.4
Gate-Source Charge Qgs VDs = 15 V, VGS = 10 V, ID = 0.6 A 0.24 no
Gate-Drain Charge di 0.08
Turn-On Delay Time (d(on) 5 10
Rise Time tr Voo= 15 V, RL=30£2 8 15
Turn-Off Delay Time td(ott) ID _ 0.5 A, VGEN = 10 V, Rs = 6 Q 8 15 ns
Fall Tlme tr 7 15
Source-Drain Reverse Recovery Time trr IF = 0.23 A, di/dt = 100 Alps 15 30
a. Pulse test; pulse width 3 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0 l 1.0
0.8 , Vss=10thru4V 0.8
'it y tii'.]
E 0.6 E 0.6
S 0.4 E 0.4
(f I 3 V 0. TC = 125% /
CI 7' CI
- 0.2 / - 0.2 C / I,
0.0 0.0 I
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
Document Number: 71249
S-02367-Reu C, 23-Oct-00
VISHAY
SH302DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
8 1.2 'ty
g 1.0 E
rl': T',
6 0.8 V68 (' V - tli,r
A 0.6 I
is',?',- VGS =10 v 0
0.0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
Gate Charge
Vros = 15 v /
E ID = 0.6 A / A
8, 8 g
55 /" a)
> g "ii"
"Q 6 / s, h'
o dl N
co ' g
is, /'" 8 g
(D / E"
I tf';
0.0 0.2 0.4 0.6 0.8 1.0
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
'8 — Source Current(A)
rDS(on) — On-Resistance ( g2)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
-50 -25 0 25 50 75 100 125 150
Capacitance
4 8 12 16 2O
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
vgs = d,
ID = 0.6 A 1
',,,p'''''"
',,i''"
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
2 4 6 8 10
V65 - Gate-to-Source Voltage (V)
Document Number: 71249
S-02367-Rev. C, 23-Oct-00
www.vishay.com
Si1302DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
V650,» Variance (V)
Threshold Voltage Single Pulse Power
0.2 "s, 4
"s, ID = 250 “A )
-01) g 3 r,
E N TA - 25°C
-0.2 E 2 N
"ss, "s, s,
-0.6 0
-50 -25 0 25 50 75 100 125 150 1o-2 1O-1 1 10 100 600
T: - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E: Duty Cycle = 0.5
ifj E Notes:
[t E 0.1 T
8 E 0.1 POM
g .5 1
t, -ly-1 ta 11
a 1. Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 360°CIW
. 3. TJM - TA = PDMZthA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
:12: 'll 0.2
i'z,' , 0.1
E l? 0.1
Single Pulse
10-4 1o-3 1o-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71249
S-02367-Reu C, 23-Oct-00
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